GENERAL SEMICONDUCTOR MARKING UD Search Results

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

WRT801

Contextual Info: Z-Power LED X10490 Technical Data Sheet Specification WRT801 SSC Drawn Approval 고객명 Approval Rev. 02 August 2009 www.ZLED.com 서식번호 : SSC-QP-7-07-24 Rev.00 Z-Power LED X10490 Technical Data Sheet CONTENTS 1. Features 2. Absolute Maximum Ratings

UD1006

Abstract: UD1006FR-H A1745
Contextual Info: UD1006FR Ordering number : ENA1745A SANYO Semiconductors DATA SHEET UD1006FR Diffused Junction Silicon Diode Low VF Switching Diode Features • • VRRM=600V trr=60ns typ (IF=0.5A, IR=1A) • • VF=1.3V max (IF=10A) Halogen free compliance Specifications

A1845

Contextual Info: UD2006FR Ordering number : ENA1845 SANYO Semiconductors DATA SHEET UD2006FR Diffused Junction Silicon Diode Low VF Switching Diode Features • • • VF=1.4V max. IF=20A VRRM=600V trr=60ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter

A1845

Abstract: n3011 ud2006 a18452
Contextual Info: UD2006FR Ordering number : ENA1845A SANYO Semiconductors DATA SHEET UD2006FR Diffused Junction Silicon Diode Low VF Switching Diode Features • • • VF=1.4V max. IF=20A VRRM=600V trr=60ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter

Contextual Info: UD1006FR Ordering number : ENA1745A SANYO Semiconductors DATA SHEET UD1006FR Diffused Junction Silicon Diode Low VF Switching Diode Features • • VRRM=600V trr=60ns typ (IF=0.5A, IR=1A) • • VF=1.3V max (IF=10A) Halogen free compliance Specifications

Contextual Info: UD2006LS-SB Ordering number : ENA1846 SANYO Semiconductors DATA SHEET UD2006LS-SB Diffused Junction Silicon Diode Low VF Switching Diode Features • • • VF=1.4V max. IF=20A VRRM=600V trr=60ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: UD2006FR Ordering number : ENA1845A SANYO Semiconductors DATA SHEET Diffused Junction Silicon Diode UD2006FR Low VF Switching Diode Features • • • VF=1.4V max. IF=20A VRRM=600V trr=60ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter

UD1006

Abstract: TO-220F JEDEC UD1006FR 318 MARKING
Contextual Info: UD1006FR Ordering number : ENA1745 SANYO Semiconductors DATA SHEET UD1006FR Diffused Junction Silicon Diode Low VF Switching Diode Features • • VRRM=600V. trr=60ns typ (IF=0.5A, IR=1A). • • VF=1.3V max (IF=10A). Halogen free compliance Specifications

A1846

Contextual Info: UD2006LS-SB Ordering number : ENA1846 SANYO Semiconductors DATA SHEET UD2006LS-SB Diffused Junction Silicon Diode Low VF Switching Diode Features • • • VF=1.4V max. IF=20A VRRM=600V trr=60ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: 2SC3122 TOSHIBA TOSHIBA TRANSISTOR i SILICON NPN EPITAXIAL PLANAR TYPE < ; r w êf 3 mm j j 1 TV VHF RF AMPLIFIER APPLICATIONS. FEATURES : High Gain : Gpe = 24dB Typ. (f=200MHz) • Low Noise : NF = 2.UdB (Typ.) (f=200MHz) • Excellent Forward AGO Characteristics,

Contextual Info: UD0506T Ordering number : ENA1705A SANYO Semiconductors DATA SHEET UD0506T Diffused Junction Silicon Diode Low VF Switching Diode Features • • • High breakdown voltage VRRM=600V Low noise at the time of reverse recovery Halogen free compliance Fast reverse recovery time

A1705

Abstract: UD0506T-H ENA1705A marking TP
Contextual Info: UD0506T Ordering number : ENA1705A SANYO Semiconductors DATA SHEET UD0506T Diffused Junction Silicon Diode Low VF Switching Diode Features • • • High breakdown voltage VRRM=600V Low noise at the time of reverse recovery Halogen free compliance Fast reverse recovery time

ultra fast diode 5a 84v

Abstract: FDMF6730 MO-220 6X6 mlp SPM 1000 plus
Contextual Info: FDMF6730 Driver plus FET Multi-chip Module Features General Description Over 95% efficiency The FDMF6730 is a high efficiency Driver plus MOSFET power stage solution optimized for Ultra Mobile PC UMPC system power voltage supplies. It is fully compliant with the Intel UltraMobile Driver MOS (uDrMOS) Specification. The MOSFETs and

Contextual Info: FDMF6730 Driver plus FET Multi-chip Module Features General Description 1 Over 95% efficiency The FDMF6730 is a high efficiency Driver plus MOSFET power stage solution optimized for Ultra Mobile PC UMPC system power voltage supplies. It is fully compliant with the Intel UltraMobile Driver MOS (uDrMOS) Specification. The MOSFETs and

ewt806

Abstract: 3055 smd ED-4701
Contextual Info: Z-Power LED X10490 Technical Data Sheet *Customer : Specification EWT806 CUSTOMER Checked by Approved by SUPPLIER Drawn by Approved by Rev. 00 July, 2009 서식번호 : SSC-QP-7-07-24 Rev.01 Z-Power LED X10490 Technical Data Sheet Revision History Revision No.

Contextual Info: Z-Power LED X10490 Technical Data Sheet Specification KWT801-S SSC Drawn Approval 고객명 Approval Rev. 00 November 2007 www.ZLED.com 서식번호 : SSC-QP-7-07-24 Rev.00 Z-Power LED X10490 Technical Data Sheet KWT801-S 1. Features 2. Absolute Maximum Ratings

STW8T16C

Abstract: SMD MARKING CODE h23 H24 SMD DIODE smd marking H24 z5 smd zener diode code D5 smd diode marking B3 MARKING G43
Contextual Info: Z-Power LED X10490 Technical Data Sheet RoHS Specification SSC-STW8T16C SSC-STW8T16C March 2013 www.seoulsemicon.com 서식번호 : SSC-QP-7-07-12 Rev.01 Z-Power LED X10490 Technical Data Sheet STW8T16C Description This surface-mount LED comes in standard

Contextual Info: LM 48411 LM48411 Ultra-Low EMI, Filterless, 2.5W, Stereo, Class D Audio Power Amplifierwith E2S Texas In s t r u m e n t s Literature Number: SNAS399F & Semiconductor LM 48411 H oom er A udio Power Amplifier Series Ultra-Low EMI, Filterless, 2.5W, Stereo, Class D Audio

SSC 9500

Abstract: Zener diode smd marking code G5 03751
Contextual Info: Z-Power LED X10490 Technical Data Sheet RoHS Specification SSC-STW9Q14B SSCSSC-STW9Q14B September 2012 www.seoulsemicon.com 서식번호 : SSC-QP-7-07-12 Rev.01 Z-Power LED X10490 Technical Data Sheet STW9Q14B Description This surface-mount LED comes in standard

Contextual Info: Freescale Semiconductor Technical Data MMG3003NT1 Rev. 1, 1/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad

freescale semiconductor body marking

Abstract: ML200C marking c5 Z3 marking
Contextual Info: Freescale Semiconductor Technical Data MMG3003NT1 Rev. 1, 1/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad

Contextual Info: LM 4671 LM4671 Filterless High Efficiency 2.5W Switching Audio Amplifier T ex a s In s t r u m e n t s Literature Number: SNAS258C a l Semiconductor LM4671 ^B oom er A udio P ow er A m p lifie r Series F ilterless High E fficiency 2 .5 W S w itching A u d io A m p lifie r