GENERAL SEMICONDUCTOR MARKING SJ DIODE Search Results

Contextual Info: B5817WS/B5818WS/B5819WS Taiwan Semiconductor Small Signal Product SOD-323 20~40V/1A Schottky Diode FEATURES - Low Forward Voltage Drop - Surface mount device type - Moisture sensitivity level 1 - Pb free and RoHS compliant MECHANICAL DATA SOD-323 - Case: Bend lead SOD-323 package

Contextual Info: Doc No. TT4-EA-11555 Revision. 3 Product Standards Zener Diode DZ2J1300L DZ2J1300L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5  Excellent rising characteristics of zener current Iz

NA42

Contextual Info: 1SV303 TOSHIBA TENTATIVE TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 303 CATV TUNING • • • U nit in mm High Capacitance Ratio : C%sj! C2 5 V = 17.5 Typ. Low Series Resistance : rs = 1.05Q (Typ.) Useful for Small Size Tuner.

Contextual Info: T O SH IB A 01ZA8.2 TOSHIBA DIODES FOR PROTECTING AGAINST ESD EPITAXIAL PLANAR TYPE 01 Z A 8 . 2 DIODES FOR PROTECTING AGAINST ESD Because two devices are mounted on an ultra compact package, it is possible to allow reducing the number of the parts and the mounting cost.

Contextual Info: Doc No. TT4-EA-11798 Revision. 3 Product Standards Zener Diode DZ2S1300L DZ2S1300L Silicon epitaxial planar type Unit: mm For constant voltage / For surge absorption circuit DZ2J130 in SSMini2 type package 0.8 0.13 2 • Features 1.2 1.6  Excellent rising characteristics of zener current Iz

Contextual Info: SBS822 Ordering number : ENA1504 SANYO Semiconductors DATA SHEET SBS822 Low VF Schottky Barrier Diode 20V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • • Low forward voltage (IF=0.5A, VF max=0.39V) (IF=1A, VF max=0.46V).

A1055

Contextual Info: SBE807 Ordering number : ENA1055A SANYO Semiconductors DATA SHEET SBE807 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, and choppers Features • • Low switching noise Low reverse current (VR=16V, IR max=15 A)

SBE807

Contextual Info: SBE807 Ordering number : ENA1055 SANYO Semiconductors DATA SHEET SBE807 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, and choppers . Features • • Low switching noise. Low reverse current (VR=16V, IR max=15 A).

Contextual Info: SBE807 Ordering number : ENA1055 SANYO Semiconductors DATA SHEET SBE807 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, and choppers . Features • • Low switching noise. Low reverse current (VR=16V, IR max=15 A).

marking code SJ general

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DZ2J130 (Tentative) Silicon epitaxial planar type For constant voltage • Absolute Maximum Ratings Ta = 25°C Parameter  Package Symbol Rating Unit IFRM 200 mA PT 200 mW Junction temperature

GENERAL SEMICONDUCTOR MARKING SJ SMA

Abstract: VISHAY MARKING SJ VISHAY MARKING SJ SMA Vishay diodes code marking bys 025 tvs SMC MARKING VISHAY MARKING CODE TVS AE SMA SMC MARKING SJ MR06X
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band Vishay Part Number

54f164admqb

Contextual Info: 54F 74F164A Serial-In Parallel-Out Shift Register General Description Features The ’F164A is a high-speed 8-bit serial-in parallel-out shift register Serial data is entered through a 2-input AND gate synchronous with the LOW-to-HIGH transition of the clock

Contextual Info: 54F 74F378 Parallel D Register with Enable General Description Features The ’F378 is a 6-bit register with a buffered common Enable This device is similar to the ’F174 but with common Enable rather than common Master Reset Y Y Y Y Y Commercial Military

74F169PC

Contextual Info: 54F 74F169 4-Stage Synchronous Bidirectional Counter General Description Features The ’F169 is a fully synchronous 4-stage up down counter The ’F169 is a modulo-16 binary counter Features a preset capability for programmable operation carry lookahead for

Contextual Info: 54F 74F377 Octal D Flip-Flop with Clock Enable General Description Features The ’F377 has eight edge-triggered D-type flip-flops with individual D inputs and Q outputs The common buffered Clock CP input loads all flip-flops simultaneously when the Clock Enable (CE) is LOW

vishay sj 96

Abstract: JESD22-B102 J-STD-002 S3JHE3
Contextual Info: S3A thru S3M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability

L339

Abstract: D-A53
Contextual Info: TO SHIBA 2SK2311 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-MOSV 2SK2311 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND SWITCHING INDUSTRIAL APPLICATIONS TO-22QFL Unit in mm 10.3MAX. REGULATOR APPLICATIONS

Contextual Info: Doc No. TT4-EA-14618 Revision. 1 Product Standards Zener Diode DZ2613000L DZ2613000L Silicon epitaxial planar type Unit : mm For constant voltage / For surge absorption circuit DZ27130 in ML2 type package 0.6 2 • Features 1.0  Excellent rising characteristics of zener current IZ

74F273

Contextual Info: 54F 74F273 Octal D Flip-Flop General Description Features The ’F273 has eight edge-triggered D-type flip-flops with individual D inputs and Q outputs The common buffered Clock CP and Master Reset (MR) inputs load and reset (clear) all flip-flops simultaneously

JESD22-B102D

Abstract: J-STD-002B S2G VISHAY
Contextual Info: S2A thru S2M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 1.5 A VRRM 50 V to 1000 V IFSM 50 A IR 1.0 µA VF 1.15 V Tj max. 150 °C DO-214AA (SMB) Features Mechanical Data • • • • •

Contextual Info: TOSHIBA TC7W53F/FU/FK TC7W 53FK : UNDER DEVELOPM ENT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7W53F, TC7W53FU, TC7W53FK 2-CHANNEL M ULTIPLEXER / DEM ULTIPLEXER The TC7W53 is a high speed CMOS ANALOG M U LTIPLEXER/D EM U LTIPLEXER fabricated with silicon

f573

Abstract: F373 54F573DM
Contextual Info: 54F 74F573 Octal D-Type Latch with TRI-STATE Outputs General Description Features The ’F573 is a high speed octal latch with buffered common Latch Enable LE and buffered common Output Enable (OE) inputs This device is functionally identical to the ’F373 but has

Contextual Info: FCA76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mΩ Features Description • RDS on = 28 mΩ (Typ. ) @ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology • Ultra Low Gate Charge (Typ. Qg = 218 nC)

Contextual Info: FCP25N60N N-Channel SupreMOS MOSFET 600 V, 25 A, 125 mΩ Features Description • RDS on = 107 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from