GENERAL SEMICONDUCTOR MARKING SJ DIODE Search Results

Contextual Info: TOSHIBA 1SV216 TOSHIBA VARIABLE CAPACITANCE DIODE TV VHF UHF TUNER AFC SILICON EPITAXIAL PLANAR TYPE 1 SV2 1 6 Unit in mm + 0.2 CHARACTERISTIC Reverse Voltage Peak Reverse Voltage Junction Temperature Storage Temperature Range SYMBOL Vr V rm Tj Tstg RATING UNIT

Contextual Info: TOSHIBA 1SV228 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 2 2 8 Unit in mm ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. • • Low rs : rs = 0.3O Typ. Small Package M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage

Contextual Info: TO SHIBA 1 SV 217 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 1 7 CATV TUNING. U nit in mm • High Capacitance Ratio : C 2 V /C 2 5 V = 12.5 Typ. • Excellent C-V Characteristics, and Small Tracking Error. 1.25 • + 0.2 0. -

Contextual Info: B5817WS/B5818WS/B5819WS Taiwan Semiconductor Small Signal Product SOD-323 20~40V/1A Schottky Diode FEATURES - Surface mount device type - Moisture sensitivity level 1 - Pb free and RoHS compliant - Low Forward Voltage Drop - General purpose rectification application

Contextual Info: B5817WS/B5818WS/B5819WS Taiwan Semiconductor Small Signal Product SOD-323 20~40V/1A Schottky Diode FEATURES - Low Forward Voltage Drop - Surface mount device type - Moisture sensitivity level 1 - Pb free and RoHS compliant MECHANICAL DATA SOD-323 - Case: Bend lead SOD-323 package

Contextual Info: Doc No. TT4-EA-11555 Revision. 3 Product Standards Zener Diode DZ2J1300L DZ2J1300L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5  Excellent rising characteristics of zener current Iz

NA42

Contextual Info: 1SV303 TOSHIBA TENTATIVE TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 303 CATV TUNING • • • U nit in mm High Capacitance Ratio : C%sj! C2 5 V = 17.5 Typ. Low Series Resistance : rs = 1.05Q (Typ.) Useful for Small Size Tuner.

Contextual Info: T O SH IB A 01ZA8.2 TOSHIBA DIODES FOR PROTECTING AGAINST ESD EPITAXIAL PLANAR TYPE 01 Z A 8 . 2 DIODES FOR PROTECTING AGAINST ESD Because two devices are mounted on an ultra compact package, it is possible to allow reducing the number of the parts and the mounting cost.

Contextual Info: TOSHIBA TENTATIVE 1SV302 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV3 0 2 CATV TUNING C%sj! C2 5 V = 17.5 • High Capacitance Ratio : • Low Series Resistance : rs = 1.05Q Typ. • Useful for Small Size Tuner. U nit in mm (Typ.)

Contextual Info: Doc No. TT4-EA-11798 Revision. 3 Product Standards Zener Diode DZ2S1300L DZ2S1300L Silicon epitaxial planar type Unit: mm For constant voltage / For surge absorption circuit DZ2J130 in SSMini2 type package 0.8 0.13 2 • Features 1.2 1.6  Excellent rising characteristics of zener current Iz

Contextual Info: SBS822 Ordering number : ENA1504 SANYO Semiconductors DATA SHEET SBS822 Low VF Schottky Barrier Diode 20V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • • Low forward voltage (IF=0.5A, VF max=0.39V) (IF=1A, VF max=0.46V).

A1504

Abstract: SBS822 marking SJ
Contextual Info: SBS822 Ordering number : ENA1504 SANYO Semiconductors DATA SHEET SBS822 Low VF Schottky Barrier Diode 20V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • • Low forward voltage (IF=0.5A, VF max=0.39V) (IF=1A, VF max=0.46V).

Contextual Info: SBS822 Ordering number : ENA1504 SANYO Semiconductors DATA SHEET SBS822 Low VF Schottky Barrier Diode 20V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • • Low forward voltage (IF=0.5A, VF max=0.39V) (IF=1A, VF max=0.46V).

Contextual Info: SBE807 Ordering number : ENA1055A SANYO Semiconductors DATA SHEET SBE807 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, and choppers Features • • Low switching noise Low reverse current (VR=16V, IR max=15µA)

SBE807

Contextual Info: SBE807 Ordering number : ENA1055 SANYO Semiconductors DATA SHEET SBE807 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, and choppers . Features • • Low switching noise. Low reverse current (VR=16V, IR max=15 A).

Contextual Info: SBE807 Ordering number : ENA1055 SANYO Semiconductors DATA SHEET SBE807 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, and choppers . Features • • Low switching noise. Low reverse current (VR=16V, IR max=15 A).

Contextual Info: SBE807 Ordering number : ENA1055 SANYO Semiconductors DATA SHEET SBE807 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, and choppers . Features • • Low switching noise. Low reverse current (VR=16V, IR max=15 A).

marking code SJ general

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DZ2J130 (Tentative) Silicon epitaxial planar type For constant voltage • Absolute Maximum Ratings Ta = 25°C Parameter  Package Symbol Rating Unit IFRM 200 mA PT 200 mW Junction temperature

GENERAL SEMICONDUCTOR MARKING SJ SMA

Abstract: VISHAY MARKING SJ VISHAY MARKING SJ SMA Vishay diodes code marking bys 025 tvs SMC MARKING VISHAY MARKING CODE TVS AE SMA SMC MARKING SJ MR06X
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band Vishay Part Number

54f164admqb

Contextual Info: 54F 74F164A Serial-In Parallel-Out Shift Register General Description Features The ’F164A is a high-speed 8-bit serial-in parallel-out shift register Serial data is entered through a 2-input AND gate synchronous with the LOW-to-HIGH transition of the clock

Contextual Info: 54F 74F378 Parallel D Register with Enable General Description Features The ’F378 is a 6-bit register with a buffered common Enable This device is similar to the ’F174 but with common Enable rather than common Master Reset Y Y Y Y Y Commercial Military

74F169PC

Contextual Info: 54F 74F169 4-Stage Synchronous Bidirectional Counter General Description Features The ’F169 is a fully synchronous 4-stage up down counter The ’F169 is a modulo-16 binary counter Features a preset capability for programmable operation carry lookahead for

VISHAY MARKING CODE

Abstract: Vishay DaTE CODE GENERAL SEMICONDUCTOR MARKING EG SMB Part marking MBL104S
Contextual Info: PDD Marking www.vishay.com Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band

marking s3g

Abstract: SMC MARKING SJ marking code S3j S3M vishay JESD22-B102D J-STD-002B dc s3m sj smc s3j marking VISHAY MARKING sm
Contextual Info: S3A thru S3M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 50 V to 1000 V IFSM 100 A IR 10 µA VF 1.15 V Tj max. 150 °C DO-214AB (SMC) Features Mechanical Data • • • • •