GENERAL SEMICONDUCTOR MARKING ED Search Results

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

Contextual Info: Central" CMPTH81 Semiconductor Corp. SURFACE MOUNT PNP SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy mold­ ed in a surface mount package, designed for general RF amplifier applications. MARKING CODE: C3D

Contextual Info: Central“ CMPTH81 Semiconductor Corp. SURFACE MOUNT PNP SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy mold­ ed in a surface mount package, designed for general RF amplifier applications. MARKING CODE: C3D

JANTX1N5719

Abstract: 01038-1N5719TX C68001 1N5719 equivalent MA1N5719HX 1N4456 96341 HP JANTX1N5719 MA1N5719 C-68001
Contextual Info: REVISIONS LTR DESCRIPTION DATE Page 3, paragraph 3.5 marking. Page 9, added vendor part number reference to paragraph 6.5. Update lead finish, manufacturer information, editorial and format changes. A B APPROVED 8 April 2002 Thomas M. Hess 18 August 2008 Thomas M. Hess

TVS marking ED VISHAY

Abstract: TVS marking code ED VISHAY
Contextual Info: BZD27 Series Vishay Semiconductors New Product formerly General Semiconductor Zener Diodes VZ Range 3.6 to 200V TVS VWM Range 6.2 to 160V Power Dissipation 2.3W DO-219AB SMF Cathode Band Top View ed t n e t a P 1.8 ± 0.1 1.0 ± 0.2 2.8 ± 0.1 5° Mounting Pad Layout

c4v7p

Abstract: C6V2P Bz027 c15p zener c47p c5v6p BZD27-C4V7P BZD27-C6V8P C18p c51p
Contextual Info: BZD27 Series Vishay Semiconductors New Product formerly General Semiconductor Zener Diodes VZ Range 3.6 to 200V TVS VWM Range 6.2 to 160V Power Dissipation 2.3W DO-219AB SMF Cathode Band Top View ed t n e t a P 1.8 ± 0.1 1.0 ± 0.2 2.8 ± 0.1 5° Mounting Pad Layout

026B

Abstract: MC12022 MC12026 MC12026A MC12026AD MC12026ADR2
Contextual Info: MC12026A 1.1 GHz Dual Modulus Prescaler The MC12026 is a high frequency, low voltage dual modulus prescaler used in phase–locked loop PLL applications. The MC12026A can be used with CMOS synthesizers requiring positive edges to trigger internal counters in a PLL to provide tuning

GF1G

Contextual Info: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.1 V, 1.2 V IR 5.0 µA Tj max. 175 °C ed* t n e Pat * Glass-plastic encapsulation technique is covered by patent

XK power 220

Abstract: SMZJ3788 SMZJ3788A SMZJ3789A SMZJ3790A SMZJ3791A SMZJ3792A SMZJ3809B
Contextual Info: SMZJ3788 thru SMZJ3809B Vishay Semiconductors formerly General Semiconductor Surface Mount Power Voltage-Regulating Diodes Zener Voltage 9.1 to 68V Steady State Power 1.5W DO-214AA SMBJ-Bend e g a lt o V ed e d n Exte Rang Cathode Band 0.155 (3.94) 0.130 (3.30)

Contextual Info: New Product BYD13DGP thru BYD13MGP Vishay General Semiconductor Avalanche Glass Passivated Junction Rectifier FEATURES • Cavity-free glass-passivated junction • Avalanche surge capability guaranteed • Low forward voltage drop ed* t n e Pat *Glass Encapsulation

74xx163

Abstract: TRANSISTOR AC125 74xx138 yb4 bridge diode 74ACT161 ac373 motorola 74ACT640 ACT163 10125 ecl to ttl 74ACT244
Contextual Info: DL138/D Rev. 4, May-2001 FACT Device Data FACT Device Data 05/01 DL138 REV 4 FACT Device Data DL138/D Rev. 4, Jun–2001  SCILLC, 2001 Previous Edition  1993 “All Rights Reserved” FACT is a trademark of National Semiconductor Corporation. MOSAIC is a trademark of Motorola, Inc.

D65019

Abstract: 1N23 diode JAN1N23WE 1N23WGMR 1N23 Diode Holder 037Z3 01037 JAN1N23WG JAN1N23WGMR ASME-14 1N23WG
Contextual Info: REVISIONS LTR A DESCRIPTION DATE APPROVED Add new source, correct figure 1 notes. Editorial changes throughout. 2 June 2006 Thomas M. Hess MIL-S-19500/322 has been inactivated. This drawing may be used as a substitute. Prepared in accordance with ASME-14.100

SMBG10

Abstract: SMBJ10C SMBJ10CA KD 271
Contextual Info: SMBG5.0 thru 188CA Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-215AA SMBG Cathode Band Stand-off Voltage 5.0 to 188V Peak Pulse Power 600W ed e d n Exte e Rang ag t l o V Mounting Pad Layout

DO-214BA

Contextual Info: RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.3 V trr 150 ns, 250 ns, 500 ns Tj max. 175 °C ed* t n e Pat

Contextual Info: BYD13DGP thru BYD13MGP New Product Vishay General Semiconductor Avalanche Glass Passivated Junction Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 200 V to 1000 V IFSM 30 A ERSM 7 mJ VF 1.1 V, 1.2 V IR 5.0 µA Tj max. 175 °C ed* t n e Pat

GF1G

Abstract: DO-214BA JESD22-B102D J-STD-002B
Contextual Info: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.1 V, 1.2 V IR 5.0 µA Tj max. 175 °C ed* t n e Pat * Glass-plastic encapsulation technique is covered by patent

label infineon lot number

Abstract: zestron washing machine verilog code Infineon code date marking format INFINEON LOT NUMBER code label washing machine panasonic schematic INFINEON trace code label samsung bluetooth KP12x matlab washing machine
Contextual Info: KP12x Barometric Air Pressure Sensors Freq uent ly Asked Quest i ons App lication No te Rev. 1.1, 2009-06-01 Sense & Control Edition 2009-06-01 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved.

Contextual Info: TQM8M9079 500−2700 MHz Variable Gain Amplifier Applications •    Wireless Infrastructure LTE / WCDMA / CDMA / EDGE PtP IF Gain Control General Purpose Wireless 20-pin 5x5 mm Leadless Package Product Features         Functional Block Diagram

CK 66 UL 94V-0

Abstract: MZ 197 3 Volt transzorb CK 66 94V-0 KM MARKING SMBG10 SMBJ10C SMBJ10CA
Contextual Info: SMBG5.0 thru 188CA Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-215AA SMBG 0.083 (2.10) 0.077 (1.96) 0.155 (3.94) 0.130 (3.30) ed e d n Exte e Rang ag t l o V Mounting Pad Layout Dimensions in inches

Z11 Marking Code

Contextual Info: TQM8M9079 500−2700 MHz Variable Gain Amplifier Applications •    Wireless Infrastructure LTE / WCDMA / CDMA / EDGE PtP IF Gain Control General Purpose Wireless 20-pin 5x5 mm Leadless Package Product Features         Functional Block Diagram

rf spdt mhz dbm

Abstract: "RF Switch" SMD MARKING CODE SEIKO EPSON INFINEON trace code label marking code samsung SMD ag 20 taiyo ARM926EJ-S BGS12AL7-6 MIPS32 IEC61340-3-1
Contextual Info: BGS12AL7-6 SPDT RF Switch Data Sheet Revision 1.2, 2009-04-22 Preliminary Industrial & Multimarket Edition 2009-04-22 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or

Contextual Info: BYD13DGP thru BYD13MGP New Product Vishay General Semiconductor Avalanche Glass Passivated Junction Rectifier FEATURES • Cavity-free glass-passivated junction • Avalanche surge capability guaranteed • Low forward voltage drop ed* t n e Pat *Glass Encapsulation

1N21WE

Abstract: 1N21WEM 1N21WEMR JAN1N21WE JAN1N21WEM JAN-1N21WEM C66058
Contextual Info: . REVISIONS LTR DESCRIPTION Change supplier, validate, editorial changes A DATE APPROVED 18 February 2009 Alan Barone MIL-S-19500/232 has been canceled. This drawing may be used as a substitute for MIL-S-19500/232. THIS DRAWING WAS REVIEWED ON 18 FEBRUARY