GENERAL SEMICONDUCTOR MARKING CODE ED Search Results

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

Contextual Info: Central" CMPTH81 Semiconductor Corp. SURFACE MOUNT PNP SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy mold­ ed in a surface mount package, designed for general RF amplifier applications. MARKING CODE: C3D

Contextual Info: Central“ CMPTH81 Semiconductor Corp. SURFACE MOUNT PNP SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy mold­ ed in a surface mount package, designed for general RF amplifier applications. MARKING CODE: C3D

JANTX1N5719

Abstract: 01038-1N5719TX C68001 1N5719 equivalent MA1N5719HX 1N4456 96341 HP JANTX1N5719 MA1N5719 C-68001
Contextual Info: REVISIONS LTR DESCRIPTION DATE Page 3, paragraph 3.5 marking. Page 9, added vendor part number reference to paragraph 6.5. Update lead finish, manufacturer information, editorial and format changes. A B APPROVED 8 April 2002 Thomas M. Hess 18 August 2008 Thomas M. Hess

D65019

Abstract: 1N23 diode JAN1N23WE 1N23WGMR 1N23 Diode Holder 037Z3 01037 JAN1N23WG JAN1N23WGMR ASME-14 1N23WG
Contextual Info: REVISIONS LTR A DESCRIPTION DATE APPROVED Add new source, correct figure 1 notes. Editorial changes throughout. 2 June 2006 Thomas M. Hess MIL-S-19500/322 has been inactivated. This drawing may be used as a substitute. Prepared in accordance with ASME-14.100

label infineon lot number

Abstract: zestron washing machine verilog code Infineon code date marking format INFINEON LOT NUMBER code label washing machine panasonic schematic INFINEON trace code label samsung bluetooth KP12x matlab washing machine
Contextual Info: KP12x Barometric Air Pressure Sensors Freq uent ly Asked Quest i ons App lication No te Rev. 1.1, 2009-06-01 Sense & Control Edition 2009-06-01 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved.

1N21WE

Abstract: 1N21WEM 1N21WEMR JAN1N21WE JAN1N21WEM JAN-1N21WEM C66058
Contextual Info: . REVISIONS LTR DESCRIPTION Change supplier, validate, editorial changes A DATE APPROVED 18 February 2009 Alan Barone MIL-S-19500/232 has been canceled. This drawing may be used as a substitute for MIL-S-19500/232. THIS DRAWING WAS REVIEWED ON 18 FEBRUARY

XK power 220

Abstract: SMZJ3788 SMZJ3788A SMZJ3789A SMZJ3790A SMZJ3791A SMZJ3792A SMZJ3809B
Contextual Info: SMZJ3788 thru SMZJ3809B Vishay Semiconductors formerly General Semiconductor Surface Mount Power Voltage-Regulating Diodes Zener Voltage 9.1 to 68V Steady State Power 1.5W DO-214AA SMBJ-Bend e g a lt o V ed e d n Exte Rang Cathode Band 0.155 (3.94) 0.130 (3.30)

TVS marking ED VISHAY

Abstract: TVS marking code ED VISHAY
Contextual Info: BZD27 Series Vishay Semiconductors New Product formerly General Semiconductor Zener Diodes VZ Range 3.6 to 200V TVS VWM Range 6.2 to 160V Power Dissipation 2.3W DO-219AB SMF Cathode Band Top View ed t n e t a P 1.8 ± 0.1 1.0 ± 0.2 2.8 ± 0.1 5° Mounting Pad Layout

c4v7p

Abstract: C6V2P Bz027 c15p zener c47p c5v6p BZD27-C4V7P BZD27-C6V8P C18p c51p
Contextual Info: BZD27 Series Vishay Semiconductors New Product formerly General Semiconductor Zener Diodes VZ Range 3.6 to 200V TVS VWM Range 6.2 to 160V Power Dissipation 2.3W DO-219AB SMF Cathode Band Top View ed t n e t a P 1.8 ± 0.1 1.0 ± 0.2 2.8 ± 0.1 5° Mounting Pad Layout

Contextual Info: New Product BYD13DGP thru BYD13MGP Vishay General Semiconductor Avalanche Glass Passivated Junction Rectifier FEATURES • Cavity-free glass-passivated junction • Avalanche surge capability guaranteed • Low forward voltage drop ed* t n e Pat *Glass Encapsulation

Contextual Info: BYD13DGP thru BYD13MGP New Product Vishay General Semiconductor Avalanche Glass Passivated Junction Rectifier FEATURES • Cavity-free glass-passivated junction • Avalanche surge capability guaranteed • Low forward voltage drop ed* t n e Pat *Glass Encapsulation

90024-03TX

Abstract: pic646
Contextual Info: REVISIONS LTR DESCRIPTION DATE APPROVED A Revise drawing, update sources. 7 August 2000 Monica Poelking B Supplier/address/CAGE change; reformat document 23 May 2002 Thomas M. Hess C Correct figure 1 - header thickness, supplier name, editorial changes throughout - RK

CK 66 UL 94V-0

Abstract: MZ 197 3 Volt transzorb CK 66 94V-0 KM MARKING SMBG10 SMBJ10C SMBJ10CA
Contextual Info: SMBG5.0 thru 188CA Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-215AA SMBG 0.083 (2.10) 0.077 (1.96) 0.155 (3.94) 0.130 (3.30) ed e d n Exte e Rang ag t l o V Mounting Pad Layout Dimensions in inches

GF1G

Contextual Info: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.1 V, 1.2 V IR 5.0 µA Tj max. 175 °C ed* t n e Pat * Glass-plastic encapsulation technique is covered by patent

Contextual Info: AOZ8208 Eight-line TVS Diode Array General Description Features The AOZ8208 is a transient voltage suppressor diode array designed to protect data lines from high transient conditions and ESD. This state-of-the-art device utilizes AOS leading edge Trench Vertical Structure [TVS]2

AOZ8208DI

Abstract: AOS date code System alpha marking code dfn 8l
Contextual Info: AOZ8208 Eight-line TVS Diode Array General Description Features The AOZ8208 is a transient voltage suppressor diode array designed to protect data lines from high transient conditions and ESD. This state-of-the-art device utilizes AOS leading edge Trench Vertical Structure [TVS]2

Contextual Info: TQM8M9079 500−2700 MHz Variable Gain Amplifier Applications •    Wireless Infrastructure LTE / WCDMA / CDMA / EDGE PtP IF Gain Control General Purpose Wireless 20-pin 5x5 mm Leadless Package Product Features         Functional Block Diagram

Z11 Marking Code

Contextual Info: TQM8M9079 500−2700 MHz Variable Gain Amplifier Applications •    Wireless Infrastructure LTE / WCDMA / CDMA / EDGE PtP IF Gain Control General Purpose Wireless 20-pin 5x5 mm Leadless Package Product Features         Functional Block Diagram

Contextual Info: TPSMC6.8 thru TPSMC47A Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability & High Reliability Conditions FEATURES • Patented PAR construction • Available in Unidirectional polarity only ed* • 1500 W peak pulse power capability with a

DO-214BA

Contextual Info: RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.3 V trr 150 ns, 250 ns, 500 ns Tj max. 175 °C ed* t n e Pat

Contextual Info: TPSMC6.8 thru TPSMC47A Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability & High Reliability Conditions FEATURES • Patented PAR construction • Available in Unidirectional polarity only ed* • 1500 W peak pulse power capability with a

JESD22-B102D

Abstract: J-STD-002B TPSMC10
Contextual Info: TPSMC6.8 thru TPSMC47A Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability & High Reliability Conditions FEATURES • Patented PAR construction • Available in Unidirectional polarity only ed* • 1500 W peak pulse power capability with a