GENERAL SEMICONDUCTOR DIODES MARKING CODE ME Search Results
GENERAL SEMICONDUCTOR DIODES MARKING CODE ME Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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GRM022R61C104ME05L | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose | |||
GRM033D70J224ME01D | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose | |||
GRM155R61H334KE01J | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose | |||
GRM2195C2A273JE01J | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose | |||
GRMJN65C1H104GE01J | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose |
GENERAL SEMICONDUCTOR DIODES MARKING CODE ME Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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GENERAL SEMICONDUCTOR MARKING SJ SMA
Abstract: VISHAY MARKING SJ VISHAY MARKING SJ SMA Vishay diodes code marking bys 025 tvs SMC MARKING VISHAY MARKING CODE TVS AE SMA SMC MARKING SJ MR06X
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DO-204AL/DO-204AC/DO-201AD/GP20/1 5KE/P600 P6KE22 GP15M 0621X 5KE15A 1N6275A SB340 GENERAL SEMICONDUCTOR MARKING SJ SMA VISHAY MARKING SJ VISHAY MARKING SJ SMA Vishay diodes code marking bys 025 tvs SMC MARKING VISHAY MARKING CODE TVS AE SMA SMC MARKING SJ MR06X | |
MMVL109T1
Abstract: MMVL109T1G
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MMVL109T1 MMVL109T1/D MMVL109T1 MMVL109T1G | |
Q62702-A118Contextual Info: SIEMENS HiRel Silicon Schottky Diode BAT 15 Features • HiRel Discrete and Microwave Semiconductor • Medium barrier diodes for detector and mixer applications • Hermetically sealed microwave package • qualified • ESA/SCC Detail Spec. No.: 5106/014 |
OCR Scan |
de/semiconductor/products/35/35 de/semiconductor/products/35/353 Q62702-A118 | |
BAT14T1
Abstract: il 074 14013 BAT14-014ES bat14
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OCR Scan |
de/semiconductor/products/35/35 de/semiconductor/products/35/353 BAT14T1 il 074 14013 BAT14-014ES bat14 | |
Renesas LOT CODE
Abstract: renesas Lot Code Identification
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JESD 201 class 1AContextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . Diodes Diodes - TO-277A SMPC Package for Smartphone Chargers V10PN50 and V15PN50 50 V TMBS Rectifiers for Smartphone Chargers Feature Industry-Low VF of 10 A and 15 A KEY BENEFITS • High current density |
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O-277A V10PN50 V15PN50 VMN-PT0378-1308 91000TO JESD 201 class 1A | |
Contextual Info: BZX85C3V3 - BZX85C56 Zener Diodes Tolerance = 5% DO-41 Glass Case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The |
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BZX85C3V3 BZX85C56 DO-41 | |
Contextual Info: SD101AWS / 101BWS / 101CWS Vishay Semiconductors Small Signal Schottky Diodes Features • For general purpose applications • The SD101 series is a Metal-on-silicon e3 Schottky barrier device which is protected by a PN junction guard ring • The low forward voltage drop and fast switching |
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SD101AWS 101BWS 101CWS SD101 LL101A LL101C, SD101A SD101C OD323 | |
1N4745A
Abstract: 1W ZENER DIODE zener diode marking code pm Marking 47
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1N4728A 1N4758A 1N4758A DO-41 1N4729A 1N4730A 1N4731A 1N4732A 1N4745A 1W ZENER DIODE zener diode marking code pm Marking 47 | |
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . AND TEC I INNOVAT O L OGY SMC3K Series N HN Diodes O 19 62-2012 Diodes - TransZorb Bi-Directional TVS Surface-Mount Bi-Directional Transient Voltage Suppressors Feature High Surge Capability to 3 kW in SMC DO-214AB Package |
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DO-214AB AEC-Q101 SMC3K22CA-M3/9A SMC3K22CAHM3/57 SMC3K22CAHM3/9A VMN-PT0344-1212 | |
1501 Dc to Dc converter
Abstract: SOD123 MARKING CODE DO35 LL103A LL103C SD103 SD103A SD103AW SD103CW DSA0043111
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SD103A/103B/103C SD103 OD123 OD323 SD103AW SD103CW LL103A LL103C. 08-Apr-05 1501 Dc to Dc converter SOD123 MARKING CODE DO35 LL103A LL103C SD103A DSA0043111 | |
1N4465
Abstract: 1N4474 1N6488 JANTXV 1N4460 JANTX 1N4466 1N4460US 1N4496 1N4496US 1N6485 1N6485CUS
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MIL-PRF-19500/406D MIL-S-19500/406C 1N4460, 1N4496, 1N6485, 1N6491 1N4460US, 1N4496US, 1N6485US, 1N6485CUS, 1N4465 1N4474 1N6488 JANTXV 1N4460 JANTX 1N4466 1N4460US 1N4496 1N4496US 1N6485 1N6485CUS | |
1N5711
Abstract: 1N6263 LL5711 LL5711-GS08 LL6263 LL6263-GS18 VISHAY MARKING Melf
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LL5711 LL6263 DO-35 1N5711 1N6263. OD-80) D-74025 18-Nov-03 1N6263 LL5711-GS08 LL6263 LL6263-GS18 VISHAY MARKING Melf | |
Contextual Info: SMZG3788 thru SMZG3809B Vishay General Semiconductor Surface Mount Power Voltage-Regulating Diodes FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low Zener impedance • Low regulation factor • Meets MSL level 1, per J-STD-020C, LF max peak |
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SMZG3788 SMZG3809B DO-215AA J-STD-020C, 2002/95/EC 2002/96/EC J-STD-002B JESD22-B102D 08-Apr-05 | |
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GENERAL SEMICONDUCTOR diodes marking code vuContextual Info: New Product PTV5.1B thru PTV36B Vishay General Semiconductor Surface Mount Power Voltage-Regulating Diodes FEATURES • Very low profile - typical height of 1.0 mm eSMP TM Series • Ideal for automated placement • Low Zener impedance • Meets MSL level 1, per J-STD-020C, LF max peak |
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PTV36B J-STD-020C, DO-220AA 2002/95/EC 2002/96/EC J-STD-002B JESD22-B10s 08-Apr-05 GENERAL SEMICONDUCTOR diodes marking code vu | |
Contextual Info: SMZJ3788 thru SMZJ3809B Vishay General Semiconductor Surface Mount Power Voltage-Regulating Diodes FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low Zener impedance • Low regulation factor • Meets MSL level 1, per J-STD-020C, LF max peak |
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SMZJ3788 SMZJ3809B J-STD-020C, 2002/95/EC 2002/96/EC DO-214AA J-STD-002B JESD22-B102D 08-Apr-05 | |
Contextual Info: SMZJ3788 thru SMZJ3809B Vishay General Semiconductor Surface Mount Power Voltage-Regulating Diodes FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low Zener impedance • Low regulation factor • Meets MSL level 1, per J-STD-020C, LF max peak |
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SMZJ3788 SMZJ3809B J-STD-020C, 2002/95/EC 2002/96/EC DO-214AA J-STD-002B JESD22-B102D 08-Apr-05 | |
Contextual Info: SMPZ3925B thru SMPZ3940B Vishay General Semiconductor New Product Surface Mount Power Voltage-Regulating Diodes FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Low Zener impedance • Low regulation factor • Meets MSL level 1, per J-STD-020C, LF max peak |
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SMPZ3925B SMPZ3940B J-STD-020C, DO-220AA 2002/95/EC 2002/96/EC J-STD-002B JESD22s 08-Apr-05 | |
PD DO-220AAContextual Info: New Product SMPZ3922B thru SMPZ3940B Vishay General Semiconductor Surface Mount Power Voltage-Regulating Diodes FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Low Zener impedance • Low regulation factor • Meets MSL level 1, per J-STD-020C, LF max peak |
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SMPZ3922B SMPZ3940B J-STD-020C, DO-220AA 2002/95/EC 2002/96/EC J-STD-002B 08-Apr-05 PD DO-220AA | |
mil-s-19500 qpl jantx1n5518b
Abstract: 1N5521B JANTXV MIL-prf-19500/437 1N5518B-1 1N5518BUR-1 1N5518C-1 1N5518CUR-1 1N5518D-1 1N5518DUR-1 1N5546B-1
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MIL-PRF-19500/437D MIL-S-19500/437C 1N5518B-1, 1N5518C-1, 1N5518D-1 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518BUR-1, 1N5518CUR-1, mil-s-19500 qpl jantx1n5518b 1N5521B JANTXV MIL-prf-19500/437 1N5518B-1 1N5518BUR-1 1N5518C-1 1N5518CUR-1 1N5518DUR-1 1N5546B-1 | |
Contextual Info: SMZJ3788 thru SMZJ3809B Vishay General Semiconductor Surface Mount Power Voltage-Regulating Diodes FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low Zener impedance • Low regulation factor • Meets MSL level 1, per J-STD-020C, LF max peak |
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SMZJ3788 SMZJ3809B J-STD-020C, 2002/95/EC 2002/96/EC DO-214AA J-STD-002B JESD22-B102D 08-Apr-05 | |
JESD22-B102D
Abstract: J-STD-002B SMZJ3788 SMZJ3809B
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SMZJ3788 SMZJ3809B J-STD-020C, DO-214AA 2002/95/EC 2002/96/EC 08-Apr-05 JESD22-B102D J-STD-002B SMZJ3809B | |
Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 15 June 2013. INCH-POUND MIL-PRF-19500/337L 15 March 2013 SUPERSEDING MIL-PRF-19500/337K AMENDMENT 3 3 June 2011 PERFORMANCE SPECIFICATION SHEET |
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MIL-PRF-19500/337L MIL-PRF-19500/337K 1N4153-1, 1N4153UR-1, 1N4153UB, 1N4153UBCA, 1N4153UBCC, 1N4153UBD, 1N4153UBN, 1N4153UBCNA, | |
"GENERAL SEMICONDUCTOR" SMZG3788A
Abstract: JESD22-B102D J-STD-002B SMZG3788 SMZG3809B
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SMZG3788 SMZG3809B J-STD-020C, DO-215AA 2002/95/EC 2002/96/EC 08-Apr-05 "GENERAL SEMICONDUCTOR" SMZG3788A JESD22-B102D J-STD-002B SMZG3809B |