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    GENERAL SEMICONDUCTOR DIODES MARKING CODE ME Search Results

    GENERAL SEMICONDUCTOR DIODES MARKING CODE ME Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GRM022R61C104ME05L
    Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose PDF
    GRM033D70J224ME01D
    Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose PDF
    GRM155R61H334KE01J
    Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose PDF
    GRM2195C2A273JE01J
    Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose PDF
    GRMJN65C1H104GE01J
    Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose PDF

    GENERAL SEMICONDUCTOR DIODES MARKING CODE ME Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    GENERAL SEMICONDUCTOR MARKING SJ SMA

    Abstract: VISHAY MARKING SJ VISHAY MARKING SJ SMA Vishay diodes code marking bys 025 tvs SMC MARKING VISHAY MARKING CODE TVS AE SMA SMC MARKING SJ MR06X
    Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band Vishay Part Number


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    DO-204AL/DO-204AC/DO-201AD/GP20/1 5KE/P600 P6KE22 GP15M 0621X 5KE15A 1N6275A SB340 GENERAL SEMICONDUCTOR MARKING SJ SMA VISHAY MARKING SJ VISHAY MARKING SJ SMA Vishay diodes code marking bys 025 tvs SMC MARKING VISHAY MARKING CODE TVS AE SMA SMC MARKING SJ MR06X PDF

    MMVL109T1

    Abstract: MMVL109T1G
    Contextual Info: MMVL109T1 Preferred Device Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid−state reliability in replacement of mechanical tuning methods. Features • • • • High Q with Guaranteed Minimum Values at VHF Frequencies


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    MMVL109T1 MMVL109T1/D MMVL109T1 MMVL109T1G PDF

    Q62702-A118

    Contextual Info: SIEMENS HiRel Silicon Schottky Diode BAT 15 Features • HiRel Discrete and Microwave Semiconductor • Medium barrier diodes for detector and mixer applications • Hermetically sealed microwave package • qualified • ESA/SCC Detail Spec. No.: 5106/014


    OCR Scan
    de/semiconductor/products/35/35 de/semiconductor/products/35/353 Q62702-A118 PDF

    BAT14T1

    Abstract: il 074 14013 BAT14-014ES bat14
    Contextual Info: SIEMENS HiRel Silicon Schottky Diode BAT 14 Features • HiRel Discrete and Microwave Semiconductor • Medium barrier diodes for detector and mixer applications • Hermetically sealed microwave package • C -esa qualified • ESA/SCC Detail Spec. No.: 5106/014


    OCR Scan
    de/semiconductor/products/35/35 de/semiconductor/products/35/353 BAT14T1 il 074 14013 BAT14-014ES bat14 PDF

    Renesas LOT CODE

    Abstract: renesas Lot Code Identification
    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    JESD 201 class 1A

    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . Diodes Diodes - TO-277A SMPC Package for Smartphone Chargers V10PN50 and V15PN50 50 V TMBS Rectifiers for Smartphone Chargers Feature Industry-Low VF of 10 A and 15 A KEY BENEFITS • High current density


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    O-277A V10PN50 V15PN50 VMN-PT0378-1308 91000TO JESD 201 class 1A PDF

    Contextual Info: BZX85C3V3 - BZX85C56 Zener Diodes Tolerance = 5% DO-41 Glass Case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The


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    BZX85C3V3 BZX85C56 DO-41 PDF

    Contextual Info: SD101AWS / 101BWS / 101CWS Vishay Semiconductors Small Signal Schottky Diodes Features • For general purpose applications • The SD101 series is a Metal-on-silicon e3 Schottky barrier device which is protected by a PN junction guard ring • The low forward voltage drop and fast switching


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    SD101AWS 101BWS 101CWS SD101 LL101A LL101C, SD101A SD101C OD323 PDF

    1N4745A

    Abstract: 1W ZENER DIODE zener diode marking code pm Marking 47
    Contextual Info: 1N4728A - 1N4758A Zener Diodes Tolerance = 5% DO-41 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TJ, TSTG Ta = 25°C unless otherwise noted Value Units Power Dissipation @ TL  50C, Lead Length = 3/8” Parameter 1.0 W Derate above 50C


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    1N4728A 1N4758A 1N4758A DO-41 1N4729A 1N4730A 1N4731A 1N4732A 1N4745A 1W ZENER DIODE zener diode marking code pm Marking 47 PDF

    Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . AND TEC I INNOVAT O L OGY SMC3K Series N HN Diodes O 19 62-2012 Diodes - TransZorb Bi-Directional TVS Surface-Mount Bi-Directional Transient Voltage Suppressors Feature High Surge Capability to 3 kW in SMC DO-214AB Package


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    DO-214AB AEC-Q101 SMC3K22CA-M3/9A SMC3K22CAHM3/57 SMC3K22CAHM3/9A VMN-PT0344-1212 PDF

    1501 Dc to Dc converter

    Abstract: SOD123 MARKING CODE DO35 LL103A LL103C SD103 SD103A SD103AW SD103CW DSA0043111
    Contextual Info: SD103A/103B/103C Vishay Semiconductors Small Signal Schottky Diodes Features • The SD103 series is a Metal-on-silicon Schottky barrier device which is e2 protected by a PN junction guard ring. • The low forward voltage drop and fast switching make it ideal for protection of MOS


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    SD103A/103B/103C SD103 OD123 OD323 SD103AW SD103CW LL103A LL103C. 08-Apr-05 1501 Dc to Dc converter SOD123 MARKING CODE DO35 LL103A LL103C SD103A DSA0043111 PDF

    1N4465

    Abstract: 1N4474 1N6488 JANTXV 1N4460 JANTX 1N4466 1N4460US 1N4496 1N4496US 1N6485 1N6485CUS
    Contextual Info: This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be slightly different in format due to electronic conversion processes. Actual technical content will be the same. This documentation process conversion measures necessary to


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    MIL-PRF-19500/406D MIL-S-19500/406C 1N4460, 1N4496, 1N6485, 1N6491 1N4460US, 1N4496US, 1N6485US, 1N6485CUS, 1N4465 1N4474 1N6488 JANTXV 1N4460 JANTX 1N4466 1N4460US 1N4496 1N4496US 1N6485 1N6485CUS PDF

    1N5711

    Abstract: 1N6263 LL5711 LL5711-GS08 LL6263 LL6263-GS18 VISHAY MARKING Melf
    Contextual Info: LL5711 and LL6263 VISHAY Vishay Semiconductors Schottky Diodes Features • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching


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    LL5711 LL6263 DO-35 1N5711 1N6263. OD-80) D-74025 18-Nov-03 1N6263 LL5711-GS08 LL6263 LL6263-GS18 VISHAY MARKING Melf PDF

    Contextual Info: SMZG3788 thru SMZG3809B Vishay General Semiconductor Surface Mount Power Voltage-Regulating Diodes FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low Zener impedance • Low regulation factor • Meets MSL level 1, per J-STD-020C, LF max peak


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    SMZG3788 SMZG3809B DO-215AA J-STD-020C, 2002/95/EC 2002/96/EC J-STD-002B JESD22-B102D 08-Apr-05 PDF

    GENERAL SEMICONDUCTOR diodes marking code vu

    Contextual Info: New Product PTV5.1B thru PTV36B Vishay General Semiconductor Surface Mount Power Voltage-Regulating Diodes FEATURES • Very low profile - typical height of 1.0 mm eSMP TM Series • Ideal for automated placement • Low Zener impedance • Meets MSL level 1, per J-STD-020C, LF max peak


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    PTV36B J-STD-020C, DO-220AA 2002/95/EC 2002/96/EC J-STD-002B JESD22-B10s 08-Apr-05 GENERAL SEMICONDUCTOR diodes marking code vu PDF

    Contextual Info: SMZJ3788 thru SMZJ3809B Vishay General Semiconductor Surface Mount Power Voltage-Regulating Diodes FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low Zener impedance • Low regulation factor • Meets MSL level 1, per J-STD-020C, LF max peak


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    SMZJ3788 SMZJ3809B J-STD-020C, 2002/95/EC 2002/96/EC DO-214AA J-STD-002B JESD22-B102D 08-Apr-05 PDF

    Contextual Info: SMZJ3788 thru SMZJ3809B Vishay General Semiconductor Surface Mount Power Voltage-Regulating Diodes FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low Zener impedance • Low regulation factor • Meets MSL level 1, per J-STD-020C, LF max peak


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    SMZJ3788 SMZJ3809B J-STD-020C, 2002/95/EC 2002/96/EC DO-214AA J-STD-002B JESD22-B102D 08-Apr-05 PDF

    Contextual Info: SMPZ3925B thru SMPZ3940B Vishay General Semiconductor New Product Surface Mount Power Voltage-Regulating Diodes FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Low Zener impedance • Low regulation factor • Meets MSL level 1, per J-STD-020C, LF max peak


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    SMPZ3925B SMPZ3940B J-STD-020C, DO-220AA 2002/95/EC 2002/96/EC J-STD-002B JESD22s 08-Apr-05 PDF

    PD DO-220AA

    Contextual Info: New Product SMPZ3922B thru SMPZ3940B Vishay General Semiconductor Surface Mount Power Voltage-Regulating Diodes FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Low Zener impedance • Low regulation factor • Meets MSL level 1, per J-STD-020C, LF max peak


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    SMPZ3922B SMPZ3940B J-STD-020C, DO-220AA 2002/95/EC 2002/96/EC J-STD-002B 08-Apr-05 PD DO-220AA PDF

    mil-s-19500 qpl jantx1n5518b

    Abstract: 1N5521B JANTXV MIL-prf-19500/437 1N5518B-1 1N5518BUR-1 1N5518C-1 1N5518CUR-1 1N5518D-1 1N5518DUR-1 1N5546B-1
    Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 December 1997 INCH POUND MIL-PRF-19500/437D 15 September 1997 SUPERSEDING MIL-S-19500/437C 20 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR TYPES,


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    MIL-PRF-19500/437D MIL-S-19500/437C 1N5518B-1, 1N5518C-1, 1N5518D-1 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518BUR-1, 1N5518CUR-1, mil-s-19500 qpl jantx1n5518b 1N5521B JANTXV MIL-prf-19500/437 1N5518B-1 1N5518BUR-1 1N5518C-1 1N5518CUR-1 1N5518DUR-1 1N5546B-1 PDF

    Contextual Info: SMZJ3788 thru SMZJ3809B Vishay General Semiconductor Surface Mount Power Voltage-Regulating Diodes FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low Zener impedance • Low regulation factor • Meets MSL level 1, per J-STD-020C, LF max peak


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    SMZJ3788 SMZJ3809B J-STD-020C, 2002/95/EC 2002/96/EC DO-214AA J-STD-002B JESD22-B102D 08-Apr-05 PDF

    JESD22-B102D

    Abstract: J-STD-002B SMZJ3788 SMZJ3809B
    Contextual Info: SMZJ3788 thru SMZJ3809B Vishay General Semiconductor Surface Mount Power Voltage-Regulating Diodes FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low Zener impedance • Low regulation factor • Meets MSL level 1, per J-STD-020C, LF max peak


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    SMZJ3788 SMZJ3809B J-STD-020C, DO-214AA 2002/95/EC 2002/96/EC 08-Apr-05 JESD22-B102D J-STD-002B SMZJ3809B PDF

    Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 15 June 2013. INCH-POUND MIL-PRF-19500/337L 15 March 2013 SUPERSEDING MIL-PRF-19500/337K AMENDMENT 3 3 June 2011 PERFORMANCE SPECIFICATION SHEET


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    MIL-PRF-19500/337L MIL-PRF-19500/337K 1N4153-1, 1N4153UR-1, 1N4153UB, 1N4153UBCA, 1N4153UBCC, 1N4153UBD, 1N4153UBN, 1N4153UBCNA, PDF

    "GENERAL SEMICONDUCTOR" SMZG3788A

    Abstract: JESD22-B102D J-STD-002B SMZG3788 SMZG3809B
    Contextual Info: SMZG3788 thru SMZG3809B Vishay General Semiconductor Surface Mount Power Voltage-Regulating Diodes FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low Zener impedance • Low regulation factor • Meets MSL level 1, per J-STD-020C, LF max peak


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    SMZG3788 SMZG3809B J-STD-020C, DO-215AA 2002/95/EC 2002/96/EC 08-Apr-05 "GENERAL SEMICONDUCTOR" SMZG3788A JESD22-B102D J-STD-002B SMZG3809B PDF