GENERAL SEMICONDUCTOR DIODE MARKING 49 Search Results

FDMS7658

Contextual Info: FDMS7658AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 1.9 mΩ Features General Description The FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest

Contextual Info: FDMS86201 N-Channel Shielded Gate PowerTrench MOSFET 120 V, 49 A, 11.5 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been

FDMS8023S

Contextual Info: FDMS8023S N-Channel PowerTrench SyncFETTM 30 V, 49 A, 2.4 mΩ Features General Description The FDMS8023S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest

Contextual Info: FDMS86200 N-Channel Power Trench MOSFET 150 V, 49 A, 18 mΩ Features General Description „ Max rDS on = 18 mΩ at VGS = 10 V, ID = 9.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

FDMS7572S

Contextual Info: FDMS7572S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 2.9 mΩ Features General Description „ Max rDS on = 2.9 mΩ at VGS = 10 V, ID = 23 A The FDMS7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and

FDMS7570S

Abstract: a2232
Contextual Info: FDMS7570S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.95 mΩ Features General Description „ Max rDS on = 1.95 mΩ at VGS = 10 V, ID = 28 A The FDMS7570S has been designed to minimize losses in power conversion application. Advancements in both silicon and

Contextual Info: FDMS86500L N-Channel PowerTrench MOSFET 60 V, 49 A, 2.5 mΩ Features General Description „ Max rDS on = 2.5 mΩ at VGS = 10 V, ID = 25 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node

FDMS2510SDC

Abstract: 10-L41B-11
Contextual Info: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 2.9 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench®

FDMS7556S

Contextual Info: FDMS7556S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.2 mΩ Features General Description „ Max rDS on = 1.2 mΩ at VGS = 10 V, ID = 35 A The FDMS7556S has been designed to minimize losses in power conversion application. Advancements in both silicon and

Contextual Info: FDMS2502SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.2 mΩ Features General Description ̈ Dual CoolTM Top Side Cooling PQFN package ̈ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced

FDMS6681Z

Abstract: RCA 7803
Contextual Info: FDMS6681Z P-Channel PowerTrench MOSFET -30 V, -49 A, 3.5 mΩ Features General Description „ Max rDS on = 3.5 mΩ at VGS = -10 V, ID = -21.1 A The FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package

RCA 7803

Contextual Info: FDMS6681Z P-Channel PowerTrench MOSFET -30 V, -49 A, 3.2 mΩ Features General Description „ Max rDS on = 3.2 mΩ at VGS = -10 V, ID = -21.1 A The FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package

3006S

Abstract: 10-6327-01
Contextual Info: N-Channel Dual CoolTM Power Trench SyncFETTM 30 V, 49 A, 1.9 mΩ Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench®

FDMS2506SDC

Contextual Info: FDMS2506SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.45 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced

PQFN08AREV6

Contextual Info: FDMS7560S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.45 mΩ Features General Description The FDMS7560S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest

L41B

Abstract: 10-L41B-11 FDMS2504SDC
Contextual Info: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.25 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench®

Contextual Info: FDB150N10 N-Channel PowerTrench MOSFET 100 V, 57 A, 15 mΩ Features Description • RDS on = 12 mΩ (Typ.) @ VGS = 10 V, ID = 49 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

Contextual Info: FDP150N10 N-Channel PowerTrench MOSFET 100 V, 57 A, 15 mΩ Features Description • RDS on = 12 mΩ (Typ.) @ VGS = 10 V, ID = 49 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

FDMS86101

Contextual Info: FDMS86101 N-Channel PowerTrench MOSFET 100 V, 49 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and

fdms8848

Contextual Info: FDMS8848NZ N-Channel PowerTrench MOSFET 40 V, 49 A, 3.1 m: Features General Description The FDMS8848NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest

Contextual Info: FDB52N20 N-Channel UniFETTM MOSFET 200 V, 52 A, 49 mΩ Features Description • RDS on = 49 mΩ (Max.) @ VGS = 10 V, ID = 26 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

Contextual Info: FDA59N25 N-Channel UniFETTM MOSFET 250 V, 59 A, 49 mΩ Features Description • RDS on = 49 mΩ (Max.) @ VGS = 10 V, ID = 29.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

Contextual Info: FDA59N25 N-Channel UniFETTM MOSFET 250 V, 59 A, 49 mΩ Features Description • RDS on = 49 mΩ (Max.) @ VGS = 10 V, ID = 29.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

FDMS7650DC

Contextual Info: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 49 A, 0.99 mΩ Features „ Dual Cool TM General Description This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package