GEE TRANSISTOR Search Results

Contextual Info: KSC2756 NPN EPITAXIAL SILICON TRANSISTOR MIXER FOR VHF TV TUNER S O T -2 3 • HIGH Gee Typi 23dB ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

Contextual Info: TOSHIBA 2SC4250 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL PLANAR TYPE 2SC4250 TV VHF M IXER APPLICATIONS • High Conversion Gain : Gee = 25dB Typ. • Low Reverse Transfer Capacitance : Cre —0 ,45pF (Typ.) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

58m transistor

Contextual Info: KSC2756 NPN EPITAXIAL SILICON TRANSISTOR MIXER FOR VHF TV TUNER . HIGH Gee Typ. 23dB ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Col lector-Base Voltage C ollector-E m ltter Voltage V Em itter-Base Voltage C ollector C urrent V Rating Unit

Contextual Info: A HIGH-DENSITY DUAL-POLYSILICON 5 VOLT-ONLY EEPROM CELL R. Lambertson, A. Malazgirt, C. Lo, A. Vahidimowlavi, P. Holland, M. Fliesler, H. Gee Xicor Inc, 851 Buckeye Court, Milpitas, California, 95035 ABSTRACT In this paper a novel full-function EEPROM cell

MIL-F-14072

Abstract: 15408 L-P-513 LP-513 ASTM-B16 MIL-T-10727 MIL-I-24768 q 1257
Contextual Info: R TI F I ED TURRET TERMINAL BOARDS 2 T Y CE 900 ISO Q I UAL MINIATURE TURRET TERMINAL BOARDS Terminals: Brass, ASTM-B16. Terminals are staked in all holes except end mounting holes. Plating: Hot Tin Dipped, MIL-T-10727. Recommended for longer shelf life and better solderability. Other plating can be furnished.

2sc1965

Abstract: 2SC1965A transistor 6w
Contextual Info: 1=24^02=] 0017537 MITSUBISHI RF POWER TRANSISTOR 30T 2SC1965A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1 96 5A is a silicon NPN epitaxial planar type transistor Dimension in mm designed for industrial use RF power amplifiers on VHF band 0 8 .5 O M A X

ptb2011

Contextual Info: ERICSSON $ PTB 2011 0 50 Watts, 500-1000 MHz UHF Broadband Power Transistor Prelim inary Description Key Features The 20110 is a class AB, NPN, common emitter RF Power Tran­ sistor intended for 28 VDC operation across 500 -1000 MHz fre­ quency band. It is rated at 50 Watts minimum output power and

Contextual Info: 2SC3123 TO SHIBA 2 S C312 3 TOSHIBA TRANSISTOR TV VHF M IXER APPLICATIONS • • SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm + 0.5 2.5-0.3 High Conversion Gain : Gce = 23dB Typ. Low Reverse Transfer Capacitance : Cre = 0.4pF (Typ.) + 0.25 .1 .5 -0 .1 5 .

transistor C 639 W

Abstract: transistor 639 BC 639 transistor transistor BC 639 transistor BC 637 Transistor S 637 T transistor BC 639 c transistor BC 635 transistor bc 100 bc 639
Contextual Info: BC 635 BC 637 NPN S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR NPN S ILIC IU M , P LAN A R E P IT A X IA L BC 639 Compì, of BC 636, BC 638, BC 640 - Driver stages of audio amplifiers Etages "D rive rs" d'amplificateurs BF 'CEO h21E 150m A

5948A

Abstract: 100L 2SC4245 marking L4 800mhz transistor MURATA TTA23A100
Contextual Info: T O S H IB A 2SC4245 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4245 Unit in mm TV TUNER, UHF MIXER APPLICATIONS. VHF-UHF BAND RF AMPLIFIER APPLICATIONS. 2.1 ±0.1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage

100L

Abstract: 2SC4245 power ic of lg tv 10t marking 800mhz transistor MURATA TTA23A100
Contextual Info: TOSHIBA 2SC4245 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4245 TV TUNER, UHF MIXER APPLICATIONS VHF-U HF BAND RF AMPLIFIER APPLICATIONS MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC SYMBOL RATING UNIT v CBO v CEO Ve b o ic Ib Pc Tj 30 15 3 50 25

2SC3120

Contextual Info: 2SC3120 TOSHIBA 2 S C 3 1 20 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV TUNER, UHF MIXER APPLICATIONS VHF ~ UHF B A N D RF AMPLIFIER APPLICATIONS + 0.5 M A X IM U M RATINGS Ta = 25°C SYMBOL VCBO VCEO v EBO ic Ib Pc Tj CHARACTERISTIC

Contextual Info: 2SC3120 TOSHIBA 2 S C312 0 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV TUNER, UHF MIXER APPLICATIONS VHF ~ UHF B AN D RF AMPLIFIER APPLICATIONS + 0.5 2 .5 - 0 .3 + 0.25 .1 .5 - 0 .1 5 . 3- M A X IM U M RATINGS Ta = 25°C SYMBOL VCBO

MURATA TTA23A100

Contextual Info: TO SHIBA 2SC4245 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4245 U nit in mm TV TUNER, UHF M IXER APPLICATIONS VHF—UHF BAND RF AM PLIFIER APPLICATIONS 2.1 ± 0.1 1.25t 0.1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage

IRGAC50U

Abstract: transistor G46 IGBT g48 ge 142 bt 34w
Contextual Info: International Rectifier PD-9.726A IRGAC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

Contextual Info: J amer philips /discrete ObE D • 001S1DS 1 bhS3T31 y PTB32001X PTB32003X PTB32005X v i T T - 3 3 - o '? MICROWAVE POWER TRANSISTORS N-P-N silicon transistors fo r use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide

IRGMC50F

Abstract: IRGMC50FD IRGMC50FU 39AF
Contextual Info: International S S Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

ic MARKING FZ

Abstract: 2SC3120 rf power npn 30Mhz .380 EPITAXIAL MURATA TTA23A100
Contextual Info: 2SC3120 TOSHIBA 2 S C 3 1 20 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV TUNER, UHF MIXER APPLICATIONS. + 0.5 2 .5 - I1 3 + 0 .2 5 1 .5 - Q .l 5 I1 V H F ~ UHF BAND RF AMPLIFIER APPLICATIONS. c5c5 ÈE- + 1 M A X IM U M RATINGS Ta = 25°C

a231d

Contextual Info: September 1990 Edition 1.0 FUJITSU DATA SHEET M B82B201-25/-35 4M-BIT HIGH-SPEED BiCMOS SRAM 4M-Bit x1 or x4 Configurable BiCMOS High-Speed Static Random Access Memory The Fujitsu MB82B201 is a 4M-bit high speed static random access memory fabricated with CMOS technology. The memory organization of MB82B201 can be

TEA7052DP

Abstract: 27MA
Contextual Info: SGS-THOMSON T E A 7052 [» [F Ä tL J O T O K S SPEECH CIRCUIT WITH POWER MANAGEMENT ADVA N C E DATA • 2/4 W IRES INTERFACE WITH . Double antisidetone network - Rx gain and AC impedance externally pro­ gram m able ■ DTMF INTERFACE ■ PULSE DIAL INTERFACE

K1502

Abstract: l61c BFX82 K1501 2N4088 2N3113 RN1030 2N3379 RN1030A l53b 5
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. I I MIN. M A X Pc T 6 T T IDER A TE F R E E I'A E I J to C

lge 673

Abstract: TRANSISTOR cq 802
Contextual Info: BEE D • 053b3E0 □017Q3C] 0 H S I P NPN N Silicon RF Transistor SIEMENS/ SPCL-. SEMICONDS ^ ^ BFR 193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • fr = 8 GHz. F = 1.2 dB at 800 MHz. ESD : Electrostatic discharge sensitive device, observe handling precautions!

transistor k1502

Abstract: dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

CA3049T

Abstract: A3102 transistor j307 3049T CA3102 J307
Contextual Info: CA3049, CA3102 ¡3 Dual High Frequency Differential Amplifiers For Low Power Applications Up to 500MHz November 1996 Features Description • Power Gain 23dB T yp . 200MHz The C A 3049 T and C A 3 102 consist of two independent