GE1003 Search Results
GE1003 Datasheets (28)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| GE1003 | Harris Semiconductor | 1.0A Iout, 150V Vrrm Fast Recovery Rectifier | Scan | 93.85KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GE1003 | Unknown | Shortform Data and Cross References (Misc Datasheets) | Short Form | 37.94KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GE1003 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 85.55KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMST5551(RANGE:100-300)
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JCET Group | NPN transistor in SOT-323 package, rated for 160V VCEO, 600mA collector current, 200mW power dissipation, with transition frequency up to 300MHz, suitable for medium power amplification and switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMDT5401(RANGE:100-300)
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JCET Group | Dual PNP transistor in SOT-363 package with 150 V collector-emitter voltage, 200 mA continuous collector current, 100 MHz transition frequency, and DC current gain up to 300. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMDT4401(RANGE:100-300)
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JCET Group | Dual NPN transistor in SOT-363 package with 60 V collector-base voltage, 40 V collector-emitter voltage, 0.6 A continuous collector current, and 250 MHz transition frequency for low power amplification and switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FMMT591(RANGE:100-300)
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JCET Group | PNP transistor in SOT-23 package with -60 V collector-emitter breakdown voltage, -1 A continuous collector current, 250 mW power dissipation, and DC current gain up to 300, suitable for general-purpose switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PXT2222A(RANGE:100-300)
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JCET Group | NPN transistor in SOT-89-3L package with 40V collector-emitter voltage, 600mA continuous collector current, 0.5W power dissipation, and DC current gain up to 300, suitable for general-purpose switching and amplification applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PXT3904(RANGE:100-300)
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JCET Group | NPN transistor in SOT-89-3L package with 40V collector-emitter voltage, 0.2A continuous collector current, 0.5W power dissipation, and transition frequency of 300MHz, suitable for low current and low voltage applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N4403-TA(RANGE:100-300)
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JCET Group | PNP transistor in TO-92 package with -40V collector-base and collector-emitter voltage, -600mA continuous collector current, 0.625W power dissipation, and DC current gain (hFE) up to 300. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT3906T(RANGE:100-300)
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JCET Group | PNP transistor in SOT-523 package with -40V collector-base and collector-emitter voltage, -200mA continuous collector current, 150mW power dissipation, and DC current gain up to 300. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT2907A(RANGE:100-300)
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JCET Group | MMBT2907A is a PNP transistor in SOT-23 package with -60V collector-base and collector-emitter voltage, -600mA continuous collector current, 250mW power dissipation, and DC current gain up to 300. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT3904-G(RANGE:100-300)
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JCET Group | MMBT3904 NPN transistor in SOT-23 package with 40V collector-emitter voltage, 200mA collector current, 200mW power dissipation, DC current gain from 100 to 300, and transition frequency of 300MHz. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMDT2227(RANGE:100-300)
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JCET Group | Dual transistor in SOT-363 package containing one NPN 2222A and one PNP 2907A, each with 600 mA continuous collector current, 200 mW power dissipation, and suitable for amplification and switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMST5401(RANGE:100-300)
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JCET Group | PNP transistor in SOT-323 package with -150 V collector-emitter voltage, -600 mA collector current, 200 mW power dissipation, and transition frequency of 100 MHz. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMDT5551(RANGE:100-300)
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JCET Group | Dual NPN transistor in SOT-26 package, with 160 V collector-emitter voltage, 0.2 A continuous collector current, 100 MHz transition frequency, and 0.2 W power dissipation, suitable for medium power amplification and switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMDT4403(RANGE:100-300)
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JCET Group | Dual PNP transistor in SOT-363 package with -40V collector-base and collector-emitter breakdown voltage, -0.6A continuous collector current, 0.2W power dissipation, and transition frequency of 200MHz. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
A92(RANGE:100-300)
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JCET Group | PNP transistor in SOT-89-3L package with -305V collector-emitter breakdown voltage, -200mA continuous collector current, 500mW power dissipation, and DC current gain up to 300. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FZT955(RANGE:100-300)
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JCET Group | PNP transistor in SOT-223 package with -140V collector-emitter voltage, -4A collector current, 0.8W power dissipation, and high DC current gain, suitable for high-voltage switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N4403(RANGE:100-300)
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JCET Group | 2N4403 PNP transistor in TO-92 package with collector-base voltage of -40V, collector current up to -600mA, DC current gain up to 300, transition frequency of 200MHz, and collector power dissipation of 0.625W. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GE1003 Price and Stock
Harris Semiconductor GE1003GE1003 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GE1003 | 1,808 | 789 |
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Buy Now | ||||||
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GE1003 | 1,808 | 1 |
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Buy Now | ||||||
SMC Corporation of America KGE10-03FITTING ,BULKHEAD CONNECTOR, KG SERIES |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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KGE10-03 | Bulk | 2 |
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Get Quote | ||||||
SMC Corporation of America 10-KGE10-03FITTING ,BULKHEAD CONNECTOR, ST STEEL, KG SERIES |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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10-KGE10-03 | Bulk | 5 Weeks | 1 |
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Get Quote | |||||
GE1003 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: GE1003 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current1.0 V(RRM)(V) Rep.Pk.Rev. Voltage150 t(rr) Max.(s) Rev.Rec. Time25n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage.97 @I(FM) (A) (Test Condition)1.0 |
Original |
GE1003 Voltage150 Time25n Current50u StyleDO-204AP | |
GE1001
Abstract: GE1002 GE1003 GE1004 GEI004 1001 harris
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OCR Scan |
M3DS271 GDS033b GE1001, GE1002 GE1003, GEI004 GE1002, GEI004 GE1001 GE1003 GE1004 1001 harris | |
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Contextual Info: 33 GE1001, GE1002 GE1003, GE1004 HARRIS SEMI CONDUCTOR 1A, 50V - 200V Ultrafast Diodes December 1993 Package Features: JEDEC STYLE D0-204 TOP VIEW • Glass Passivated Junction • Ultra-Fast Recovery Times • Low Forward Voltage Drop, High-Current Capability |
OCR Scan |
GE1001, GE1002 GE1003, GE1004 D0-204 GE1002, GEI004 | |
IRF 1640
Abstract: GD4049B IRF 1640 G GAL16V8-20LNC gal22cv10 HA2-2725-5 HA2-2655-5 HA2-2650-2 irf 2030 GAL22CV10-10LVC
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OCR Scan |
FDC92C36BP FDC92C36P FDC92C38BP FDC92C33BT FDC92C39BUP FDC92C39BTBI FDC92C39BTCD FDC92C39BTLJP FDC92C39BTP FDC92C39LJP IRF 1640 GD4049B IRF 1640 G GAL16V8-20LNC gal22cv10 HA2-2725-5 HA2-2655-5 HA2-2650-2 irf 2030 GAL22CV10-10LVC | |
thyristor TAG 8506
Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
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OCR Scan |
11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719 | |
diode mur
Abstract: 600V 25A Ultrafast Diode MUR850 diode diode 400V 4A igbt 1000v 80a diode 400v 2A ultrafast igbt 200v 30a 600v 30a IGBT 30A, 600v DIODE igbt 200V 4A
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OCR Scan |
GE1001, GE1002, GE1003, GE1004 GE1101, GE1102, GE1103, GE1104 GE1301, GE1302, diode mur 600V 25A Ultrafast Diode MUR850 diode diode 400V 4A igbt 1000v 80a diode 400v 2A ultrafast igbt 200v 30a 600v 30a IGBT 30A, 600v DIODE igbt 200V 4A | |
equivalent data book of 10N60 mosfet
Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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OCR Scan |
1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40 |