GE006367 Search Results
GE006367 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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GE006367Contextual Info: SIEMENS GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays LD 260 LD 262 . LD 269 Chip 2.54 mm spacing GE006367 Cathode LD 263 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features |
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ge00636780-serield260 | |
T20 96 diode
Abstract: LD260 LD261-5/6 LD262 LD261 diode
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ge006367ld261ld262ld263+7 | |
UV diode 250 nm
Abstract: SFH 508 SFH291
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ge0063679x1ct146x1012ohf01+3 | |
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Contextual Info: SIEMENS GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays 7.4 LD 260 LD 262 . LD 269 Chip in O CO (O o N GE006367 (O CO (O o o 0 Cathode (LD 263) Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale |
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ge00636780-serie | |
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Contextual Info: BPX81 2-10 TRANSISTOR ARRAYS BPX82— 89, 80 SIEMENS SINGLE TRANSISTOR Silicon NPN Phototransistor Dimensions in inches mm BPX81 Dimension “A*. Part No. Min. Max. BPX82 .177 (4.5) .193 (4.9) BPX 83 .275 (7.0) .291 (7.4) BPX 84 .377 (9.6) .393 (10) BPX 85 |
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bpx81bpx82ge0063671000lx+4 | |
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Contextual Info: SIEMENS K 0 M 2 1 08 5 x 5 Silicon PIN Photodiode Array FEATURES • Suitable for use in the visible light and near infrared range • Low noise • Short switching time typ. 10 ns • Every single diode can be activated D im ensions in inch e s (m m ) Chip position Epoxy resin transparent |
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41iai18-plnfl535t | |
U850 diode
Abstract: U850 KOM2108 84X101
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kom2t084x101lkom2108u850 diode+2 |