GE SPICE Search Results

ST 9340

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PSSI3120CA PECL termination Product specification 2001 Jul 19 Philips Semiconductors Product specification PECL termination PSSI3120CA PINNING - SOT23 FEATURES • Single channel PECL termination in a three pin SOT23

e420 dual jfet

Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
Contextual Info: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.

npn transistor w19

Abstract: w19 transistor
Contextual Info: U h # HARRIS HTA2000 SEMICONDUCTOR • RCA • GE • INTERSIL VHF Tile Array June 1990 Advance Information Features Overview • Supported on Harris Bipolar Analog FASTRACK Design System The Harris HTA2000 Tile Array provides the analog system designer with a fast turn, low cost tile array methodology for

BMA16X16

Contextual Info: SI GE C P L E S S E Y MARCH 1997 S E M I C O N D U C T O R S CLA80000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION ARRAY SIZES The CLA80k gate array series from GEC Plessey Semiconductors offers advantages in speed and density over previous array series. Improvements in design combined with

Contextual Info: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX617 ISSSU E 1 - NOVEMBER 1998 FEATU RES * 2W POWER D IS S IP A T IO N * * * * 12A Peak Pu lse Current Exce lle n t H FE C h a ra cte ristics up to 12 A m p s Extre m e ly Lo w S a tu ra tio n V o lta ge E.g. 8 m v T y p .

LT8900

Abstract: itt 2222a LT89000 2203a ses cree 3535 PS-303 AD clt850 LT8600 2168A LT8500
Contextual Info: Æ | M IT - L I f 1 w II CLA80000 SERIES I Km*Ink HIGH DENSITY CMOS GATE ARRAYS SEMICONDUCTOR DS3820-2.1 July 1997 INTRODUCTION ARRAY SIZES T he C L A 8 0 k gate array se rie s from M itel S e m ico n d u cto r offers advan ta ge s in spe ed and d e n sity over previous array

LTA 702 N

Abstract: LTA 702
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 FEATU RES * 60 Volt V CE0 P A R T M A R K IN G D E T A IL - 702 ABSOLUTE MAXIMUM RATINGS, PARAM ETER SYM BO L D ra in -S o u rce V o lta ge ^DS C o n tin u o u s D rain C u rren t at T <Jmb=25°C

Contextual Info: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS FZT651 ISSU E 2 - FEBRUARY 1995_ FEATURES * 60 Volt V CE0 * 3 A m p c o n tin u o u s current * L o w Saturation v olta ge C O M P L E M E N T A R Y T Y P E - FZT751 P A R T M A R K IN G D E T A IL - FZT651

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT689B I S S U E 3 - O C T O B E R 1995 _ FEATU RES * G ain o f 400 at lc=2 A m p s a n d lo w saturation v o lta ge * Extrem ely lo w e q u iva le nt o n -re sistan ce; R CElMti 9 2 m Q at 3 A

Contextual Info: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT653 I S S U E 3 - F E B R U A R Y 1995 FEATURES * L o w saturation v o lta ge C O M P LEM EN T A R Y TYPE - F2 T 7 53 P A R T M A R K IN G D E T A I L - FZ T 653 B ABSOLUTE MAXIMUM RATINGS. PARAM ETER

E3030

Contextual Info: SOT223 NPN SILICON PLANAR DARLINGTON TRANSISTOR FZTA14 ISSUE 3 -J A N U A R Y 1996_ P A R T M A R K IN G DETAIL:- D E V IC E T Y P E IN F U L L C O M P LEM EN T A R Y TYPE FZTA64 ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L C olle ctor-E m itter V o lta ge

Contextual Info: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ISSUE 4- FEBRUARY 1996 FEATURES * 25 V o ll V,C EO 3 A m p c o n tin u o u s current L o w saturation v o lta ge Excellent h FF specified up to 6 A C O M P L E M E N T A R Y TYPE FZT749 P A R T M A R K IN G D E T A I L -

Contextual Info: \ f POWER O P E R A TIO N A L A M P LIF IE R S t M I C R O T E C H N O L O C Y p p ai o • p a io a HT T P : / / W W W . A P E X M IC R OT E C H . C O M 80 0 546-A PEX (8 0 0 ) 546-2739 FEATURES • GAIN BANDWIDTH PRODUCT — 4MHz • TEMPERATURE R AN GE

PIN diode SPICE model

Abstract: Microwave PIN diode spice Microwave PIN diode pin diode ge-2 transistor TM 937 UMX5601 V920 pin model spice MSC Microwave
Contextual Info: Spice Model Data for UMX5601 PIN Diode TM SPICE MODEL DATA The overall SPICE PIN diode model developed for the UMX5601 exhibits the equivalent circuit shown below where: - CPACK is the package capacitance L CONTACT is the contact inductance CI is the punch through I-region capacitance

LM308

Abstract: LM308 spice model 332E
Contextual Info: SPICE MACROMODELS TECHNOLOGY LM308 Macromodel ★ * * * * * * * Linear Technology LM308 op amp model Written: 08-23-1989 15:46:51 Type: Bipolar npn input, external comp. Typical s p e c s : V o s = 2 .0E-03, Ib=1.5E-09, Ios=2.0E-10, G B P = 6 .0E+05Hz, Phase m a r . = 70 deg,

Contextual Info: SOT23 NPN SILICON PLANAR M ED IU M POWER TRANSISTOR I FMMT449 ISSU E 3 - NOVEM BER 1995_ FEATURES * Low equivalent on-resistance; RCE sat! 250mii at 1A C O M PLEM EN TARY TYPE PARTMARKING DETAIL - FMMT549 449 ABSOLUTE M A X IM U M RATINGS.

spice

Abstract: diode 10e IR80CPQ20
Contextual Info: Electro-Thermal SPICE Schottky Diode Model suitable both at room temperature and at high temperature December 20th, 1999 Alberto Guerra and Francesco Vallone Department of Input/Output Rectifier International Rectifier, 1521 Grand, El Segundo 90245, California, U.S.A.

Contextual Info: N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVN4210A ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS on = 1.5Ω * Spice model available D G S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Drain-So urce Voltage V DS

Contextual Info: h a rris HC55183, HC55184 S E M I C O N D U C T O R " " PRELIMINARY juiy 1998 Short Loop Ringing S LIC Description Features Integrated Battery Switch T he SSSsiSSS Silent Polarity Reversal H C 55183 HC55184 and Rin9ing S LIC s are s h o rt loop ringing

Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ZVN4210G _- ISSUE 2 - NOVEMBER 1995 FEATURES L o w R DS!on = 1.5Q P A R T M A R K IN G D E T A IL - Z V N 4 2 1 0 ABSOLUTE M A X IM U M RATINGS. PARAM ETER

aim dba he ng

Abstract: GE Capacitor
Contextual Info: h a r to s HC55180, HC55181, 02 S E M I C O N D U C T O R PRELIMINARY juiy 1998 Extended Reach Ringing SLIC Family Description Features jp p Battery Operation to 100V Peak Ringing Amplitude 95V, 5 REN extbnbbb Sinusoidal or Trapezoidal Ringing Capability ft b a c h

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX951 IS S U E 4 - J U N E 94 — 4 A m p s continuous current U p to 15 A m p s peak current Very low saturation voltage Excellent gain up to 10 A m p s Spice model available E E-Line TQ92 Compatible

Contextual Info: SOT89 NPN SILICON PLANAR M EDIUM POWER TRANSISTOR FCX491A ISSUE 3 - OCTOBER 1995 FEATU RES * 1 A m p c o n tin u o u s current C O M P L E M E N T A R Y TYPE- FCX591A P A R T M A R K IN G D E T A IL S - N2 #• B ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L

R2A15218FP

Abstract: R2S15201 r2s15904sp R2S15205FP R2A15218 R2A15108SP R2S15201DD r2a15108fp R2A15906SP R2A15106NP
Contextual Info: 2007.10 Everywhere you imagine. ^ ICs for audio products w w w .re n e sa s.co m JUT'ltTviD^ —x -f :* IC R e n e s a s I C s for a u d io p r o d u c t s p ro v id e y o u r s y s t e m w ith o p tim u m p r e s e n c e . I7 > 5 1' y ^ ' i b T < D ^ S s f f i j g * « * f c f c f c 5 3 / « '> 7 > ^