GE POWER TRANSISTOR LIST Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UG1N120 Preliminary Insulated Gate Bipolar Transistor 5.3A, 1200V NPT SERIES N-CHANNEL IGBT  DESCRIPTION The UTC UG1N120 is a NPT series N-Channel IGBT, it uses UTC’s advanced technology to provide the customers with a minimum on-state resistance, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UG5N120 Preliminary Insulated Gate Bipolar Transistor 21A, 1200V NPT N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODES  DESCRIPTION The UTC UG5N120 is a NPT N-Channel IGBT, it uses UTC’s advanced technology to provide the customers with a minimum

mosfet 10a 600v

Abstract: D-12 IRGBC20S rectifier IGBT IRGBC20S IGBT
Contextual Info: IGBT Designer’s Manual Data Sheets The IGBT devices listed in this Designer’s Manual represent International Rectifier’s IGBT line as of August, 1994. The data presented in this manual supersedes all previous specifications. C-2 PD - 9.687A IRGBC20S

D-12

Abstract: IRGBC20S IRGBC20S IGBT
Contextual Info: IGBT Designer’s Manual Data Sheets The IGBT devices listed in this Designer’s Manual represent International Rectifier’s IGBT line as of August, 1994. The data presented in this manual supersedes all previous specifications. C-2 PD - 9.687A IRGBC20S

D-12

Abstract: IRGBC20S
Contextual Info: Previous Datasheet Index Next Data Sheet IGBT Designer’s Manual Data Sheets The IGBT devices listed in this Designer’s Manual represent International Rectifier’s IGBT line as of August, 1994. The data presented in this manual supersedes all previous specifications.

transistor cross reference

Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Contextual Info: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC

md918 Transistor

Abstract: germanium MM2264 2N3050 MC369G
Contextual Info: TH E SEM ICO N D U CTO R DATA BOOK SUPPLEMENT 1 This is the first supplement to the 2nd Edition of the Semiconductor Data Book originally publishedin August 1966. It is produced to keep an up-to-date listing of the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers intro­

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

Marcon capacitor Co

Abstract: CACFM D1N54 2SC3279 equivalent 2SK1112 CACFM 1A220M Marcon 2SC3279 41178 8436
Contextual Info: Contents Features . 1 Applications. 1 Block d ia g ra m . 1 Pin A s s ig n m e n t. ; .

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Contextual Info: GP500LSS06S M ITEL Powerline N-Channel IGBT Module S E M IC O N D U C T O R DS4324 - 4.4 Decem ber 1998 S upersedes July 1998 version, DS4324 - 4.3 The GP500LSS06S is a single switch 600V, robust n channel e nhancem ent mode insulated gate bipolar transistor IGBT . Designed for low power loss, the module

uts 7805

Abstract: 7805 voltage regulator IC function
Contextual Info: 19-0001; Rev 2; 8/97 M ic roproc e ssor Volt a ge M onit or w it h Dua l Ove r/U nde rvolt a ge De t e c t ion The ICL7665 warns microprocessors µPs of overvoltage and undervoltage conditions. It draws a typical operating current of only 3µA. The trip points and hysteresis of the two voltage detectors are individually programmed via external resistors to any voltage greater

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

Contextual Info: MOTOROLA Order this document by MGY30N60D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGY30N60D Insulated G ate Bipolar Transistor with A nti-P arallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 6 4

20N60D

Contextual Info: MOTOROLA Order this document by MGW20N60D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGW 20N60D Insulated G ate Bipolar Transistor with A nti-P arallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 4 7

Contextual Info: 19-0438; Rev 0; 9/95 NUAL KIT MA ATION EET H S A EVALU T WS DA FOLLO 5 V or Adjust a ble , Low -Volt a ge , St e p-U p DC-DC Cont rolle r _Applic a t ions High-Efficiency DC-DC Converters _Fe a t ure s ♦ 1.8V to 16.5V Input Range

Contextual Info: < HVIGBT MODULES > CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1500HC-66R       IC•·········································································· 1500A

781mA

Contextual Info: Voltage Regulators AN8017SA 1.8-volt 2-channel step-up DC-DC converter control IC • Overview Unit: mm 5.00±0.20 16 9 +0.10 0.15 –0.05 6.40±0.30 1.0 0° to 10° di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing

ge traction motor

Abstract: DS493
Contextual Info: @M ITEL GP800DHB12T Powerline N-Channel IGBT Module SEMICONDUCTOR A dvance Inform ation Supesedes August 1998, version DS4931-2.0 DS4931-3.5 February 1999 The GP800DHB12T is a dual switch 1200V, robust n channel enhan cem e nt m ode Insulated gate bipolar

Contextual Info: Voltage Regulators AN8018SA 1.8-volt 2-channel step-up, step-down, or inverting DC-DC converter control IC Unit: mm • Overview The AN8018SA is a two-channel PWM DC-DC converter control IC that features low-voltage operation. This IC can obtain the step-up, step-down and inverting voltages with a small number of external components.

Contextual Info: 19-1225; Rev 3; 9/04 H igh-Volt a ge , Low -Pow e r Line a r Re gula t ors for N ot e book Com put e rs _Fe a t ure s The MAX1615/MAX1616 are micropower, SOT23-5 linear regulators that supply always-on, keep-alive power to CMOS RAM and microcontrollers µCs in systems

30N60

Abstract: 30N60 220 bt 109 transistor w30n60 Transistor motorola 418 gw 348
Contextual Info: MOTOROLA Order this document by MGW30N60/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G W 30N 60 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced

iss-101 diode

Abstract: 873021A 873025 H1 SOT-89 amplifier S-875045BUP-ABA-T2 S-87X aaat
Contextual Info: Contents Features . 1 Applications . 1 Options 1 Pin Assignment . 1 . 1

D 400 F 6 F BIPOLAR TRANSISTOR

Contextual Info: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK856-400 IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope,

ge traction motor

Contextual Info: DIM400XSM65-K000 Single Switch IGBT Module DS5808-1.0 November 2004 FEATURES • High Thermal Cycling Capability • Soft Punch Through Silicon • Isolated MMC Base with AlN Substrates KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN23659)