GE P 400 DIODE Search Results

5n fast recovery diodes

Abstract: A197PD A197C A397 GE a197 1N3735 1N4045 A190 A197N A197
Contextual Info: RECTIFIERS io<u - 250 TO 740 A M P E R E S JEDEC GE TYPE - 1N3735-44 - 1N4044-56 - - - A190 - A197 - A 390 A397 A 500 250 250 250 275 400 400 740 144 130 110 120 145 110 100 SPECIFICATIONS Max. average forward current 1 phase ' f m ( a v operation) (A)

tp4m

Contextual Info: 3 Q T P 4 K E S E R IE S Voltage Range 6.8 to 400 Volts 400 Watts Peak Power TRANSIENT VOLTAGE SUPPRESSOR DIODES D0-41 Features • P lastic packa ge has U n derw riters Lab ora tory Flam m ability C lassifica tion 94V -0 a 4 0 0 W surge cap a b ility a t 10 x 10Ous w a v e fo rm ,d u ty cycle:

GE SCR Manual

Abstract: "scr manual" scr manual GE A390C Rectifier Diode general electric a390e A390 ge a390t Dow corning 744 1N4053 GE SCR 1000
Contextual Info: RECTIFIERS io<u - 250 TO 740 AMPERES JE D E C GE T Y P E S PEC IFICATIO N S Max. average forward current 1 phase ' f m ( a v operation) (A) @ Tc = (°C) - 1N3735-44 - 1N4044-56 - - - A190 - A197 - A 390 A397 A 500 250 250 250 275 400 400 740 144 130 110

"scr manual"

Abstract: A397 Metric Torque Specifications for copper Bolts GE SCR Manual scr manual A397PB General electric SCR manual metric bolts torque m 32 A397A 1N3735
Contextual Info: RECTIFIERS 250 TO 740 AM PERES JE D E C GE T Y P E S PEC IFICATIO N S Max. average forward current 1 phase ' f m ( a v operation) (A) @ Tc = (°C) io<u - - 1N3735-44 - 1N4044-56 - - - A190 - A197 - A 390 A397 A 500 250 250 250 275 400 400 740 144 130 110

A190A

Abstract: a190d A500LC GE A390C Rectifier Diode 1N3735 1N4045 A190 A197 A197A A390
Contextual Info: RECTIFIERS 250 TO 740 AM PERES JE D E C GE T Y P E S PEC IFICATIO N S Max. average forward current 1 phase ' f m ( a v operation) (A) @ Tc = (°C) io<u - - 1N3735-44 - 1N4044-56 - - - A190 - A197 - A 390 A397 A 500 250 250 250 275 400 400 740 144 130 110

A197P

Abstract: a197 1n3736 1N4053 A500LC GE A390C Rectifier Diode 1N3735 1N4045 A190 A190A
Contextual Info: R E C T IFIE R S 250 TO 740 A M P E R E S JEDEC GE TYPE io<u - - 1N3735-44 - 1N4044-56 - - - A190 - A197 - A 390 A397 A 500 250 250 250 275 400 400 740 144 130 110 120 145 110 100 SPECIFICATIONS Max. average forward current 1 phase ' f m ( a v operation) (A)

a1000n

Contextual Info: discrete sensors standard photo diodes SIDE LOOKING PACKAGES OED-SP-12SF Ptef&ge Limits of Safe Operation V* Pu t-Opr Max V Max(mW) (°C) id&B* Style Voc mV Typ Side Looking Lead Frame Black Epoxy 5 30 -20 ~ + 80 400 Isc M nAMax @Vft a 10V *P xe des X nM

Contextual Info: FF 100 R 06 KF 2 Electrical properties VcES Maximum rated values 600 V lc 100 A IC R M 200 A O 400 W V ge 20 V Inversdiode Inverse diode V eg 20 V Elektrische Eigenschaften Electrical properties Höchstzulässige W erte lF max ¡F R M t p =1 ms Maximum rated values

SCR C106Y1

Abstract: ge c106b1 1N177 2N1777A 2N2344 2N1932 G C106B1 2N1931 Z4XL18 2N2346
Contextual Info: 232 232 232 O 232 o P H A S E C O N T R O L SCR’ s LOW C U R R E N T .5 TO 4.0 A M P ER ES GE TYPE JE D EC C3 C103 C8 C6 C7 05 — C106 C107 2N877-81 — 2N1929-35 — 2N2344-48 2N2322-29 * 2NI1595-99 — — 30-200 30-200 25-300 25-200 2G-200 25-400 «M O »

5202 GE

Abstract: KA 7502 STS7102 TS7101
Contextual Info: TELEFUNKEN ELECTRONIC m 44E » ñ ^ D O T b 0011175 2 B1ALG6 Infrared Emitting Diodes G aA s IR Emitting Diodes in Plastic Package Characteristics Package Type I. Dimensions see page 4 9 -5 3 at at U mW/sr mA fp= 1 0 y s /F = 1 A ns mA TV* 1 8 m m Blue p la stic p a c ka ge

RG105

Abstract: ir igbt 1200V 10A SS850 sa wf IRGP20B120UD-E
Contextual Info: PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through NPT Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability

IRGP20B120UD-E

Abstract: IGBT Transistor 1200V, 25A
Contextual Info: PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through NPT Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability

RR3020

Abstract: ga128d
Contextual Info: SKM 500 GA 128 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C

siemens igbt BSM 300 gb

Abstract: siemens igbt BSM 300
Contextual Info: SIEMENS BSM 400 GB 60 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 400 GB 60 DN2 VCE 600V 475A Package Ordering Code HALF-BRIDGE 2 C67070-A2120-A67 Maximum Ratings

siemens igbt BSM 150 gb 100 d

Abstract: siemens igbt BSM 100 gb siemens igbt BSM 25 Gb 100 d BSM 15 GB GB120DN2 100-GB
Contextual Info: SIEMENS BSM 100 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 100 GB 120 DN2 VCE h 1200V 150A Package Ordering Code HALF-BRIDGE 2 C67076-A2107-A70 Maximum Ratings Parameter

G20N50c

Abstract: 20N50C1D GE 639 1D50C "parallel diode" 20N50E 443 20N 20n50c
Contextual Info: i \M J H A R R I S semiconductor H G TH 20N 40C 1D , H G TH 20N 40E1D , H G TH 20N 50C 1D , H G TH 20N 50E 1D 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aphi 1995 Features Package • 20A, 400V and 500V • ^ C E O N JEDEC TO-218AC

Contextual Info: SIEMENS BSM150 GT 120 DN2 IGBT Power Module Preliminary data • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 150 GT 120 DN2 K ce 1200V 200A Package Ordering Code

Contextual Info: IRGP6690DPbF IRGP6690D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 90A, TC =100°C tSC ≥ 5µs, TJ max = 175°C G G VCE(ON) typ. = 1.65V @ IC = 75A E E G G Gate C Collector Features Benefits High efficiency in a wide range of applications

Contextual Info: SIEMENS BSM150GB170DN2 E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • ^G on.min = 10 Ohm Type ‘'CE BSM150GB170DN2 E3166 1700V 220A h

Halbleiterbauelemente DDR

Abstract: BEL 639 transistor Sowjetische Halbleiter-Bauelemente KBC111 k4213 Germanium Transistor katalog radio fernsehen elektronik elektronik DDR KT904 KT372
Contextual Info: K a ta lo g sowjetischer H albleiterbauelem ente Si« linden im K a t a lo g t e il : Der hiermit unseren Lesern vorgelegte Katalog sowjetischer Transistoren, Dioden und integrierter Schaltkreise ist das Resultat enger Zusammen­ arbeit zwischen dem VEB Elektronikhandel Berlin und der Redaktion der

siemens igbt BSM 150 Gb 160 d

Abstract: siemens igbt BSM 150 gb 100 d siemens igbt BSM 300 gb siemens igbt BSM 25 gb 100 d siemens igbt BSM 300
Contextual Info: SIEMENS BSM 200 GB 120 ON2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 200 GB 120 DN2 1200V 290A h Package Ordering Code HALF-BRIDGE 2 C67070-A2300-A70 Maximum Ratings Parameter

Contextual Info: IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V G G C IC = 40A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 25A E n-channel Applications G IRG7PH44K10DPbF

Contextual Info: IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 40A, TC =100°C tSC 10µs, TJ max = 150°C G GC VCE(ON) typ. = 1.9V @ IC = 25A E G Gate • Industrial Motor Drive

Contextual Info: SIEMENS BSM150GB120DN2E3166 IG B T P o w e r M odule P re lim in a ry data • H alf-bridge • Including fa st free -w h e e lin g diodes • E n larged d io d e area • P ackage w ith insulated m etal base plate T yp e ^CE BSM 150G B120DN2E3166 1200V 210A