GE P 400 DIODE Search Results

5n fast recovery diodes

Abstract: A197PD A197C A397 GE a197 1N3735 1N4045 A190 A197N A197
Contextual Info: RECTIFIERS io<u - 250 TO 740 A M P E R E S JEDEC GE TYPE - 1N3735-44 - 1N4044-56 - - - A190 - A197 - A 390 A397 A 500 250 250 250 275 400 400 740 144 130 110 120 145 110 100 SPECIFICATIONS Max. average forward current 1 phase ' f m ( a v operation) (A)

tp4m

Contextual Info: 3 Q T P 4 K E S E R IE S Voltage Range 6.8 to 400 Volts 400 Watts Peak Power TRANSIENT VOLTAGE SUPPRESSOR DIODES D0-41 Features • P lastic packa ge has U n derw riters Lab ora tory Flam m ability C lassifica tion 94V -0 a 4 0 0 W surge cap a b ility a t 10 x 10Ous w a v e fo rm ,d u ty cycle:

GE SCR Manual

Abstract: "scr manual" scr manual GE A390C Rectifier Diode general electric a390e A390 ge a390t Dow corning 744 1N4053 GE SCR 1000
Contextual Info: RECTIFIERS io<u - 250 TO 740 AMPERES JE D E C GE T Y P E S PEC IFICATIO N S Max. average forward current 1 phase ' f m ( a v operation) (A) @ Tc = (°C) - 1N3735-44 - 1N4044-56 - - - A190 - A197 - A 390 A397 A 500 250 250 250 275 400 400 740 144 130 110

"scr manual"

Abstract: A397 Metric Torque Specifications for copper Bolts GE SCR Manual scr manual A397PB General electric SCR manual metric bolts torque m 32 A397A 1N3735
Contextual Info: RECTIFIERS 250 TO 740 AM PERES JE D E C GE T Y P E S PEC IFICATIO N S Max. average forward current 1 phase ' f m ( a v operation) (A) @ Tc = (°C) io<u - - 1N3735-44 - 1N4044-56 - - - A190 - A197 - A 390 A397 A 500 250 250 250 275 400 400 740 144 130 110

A190A

Abstract: a190d A500LC GE A390C Rectifier Diode 1N3735 1N4045 A190 A197 A197A A390
Contextual Info: RECTIFIERS 250 TO 740 AM PERES JE D E C GE T Y P E S PEC IFICATIO N S Max. average forward current 1 phase ' f m ( a v operation) (A) @ Tc = (°C) io<u - - 1N3735-44 - 1N4044-56 - - - A190 - A197 - A 390 A397 A 500 250 250 250 275 400 400 740 144 130 110

A197P

Abstract: a197 1n3736 1N4053 A500LC GE A390C Rectifier Diode 1N3735 1N4045 A190 A190A
Contextual Info: R E C T IFIE R S 250 TO 740 A M P E R E S JEDEC GE TYPE io<u - - 1N3735-44 - 1N4044-56 - - - A190 - A197 - A 390 A397 A 500 250 250 250 275 400 400 740 144 130 110 120 145 110 100 SPECIFICATIONS Max. average forward current 1 phase ' f m ( a v operation) (A)

a1000n

Contextual Info: discrete sensors standard photo diodes SIDE LOOKING PACKAGES OED-SP-12SF Ptef&ge Limits of Safe Operation V* Pu t-Opr Max V Max(mW) (°C) id&B* Style Voc mV Typ Side Looking Lead Frame Black Epoxy 5 30 -20 ~ + 80 400 Isc M nAMax @Vft a 10V *P xe des X nM

SCR C106Y1

Abstract: ge c106b1 1N177 2N1777A 2N2344 2N1932 G C106B1 2N1931 Z4XL18 2N2346
Contextual Info: 232 232 232 O 232 o P H A S E C O N T R O L SCR’ s LOW C U R R E N T .5 TO 4.0 A M P ER ES GE TYPE JE D EC C3 C103 C8 C6 C7 05 — C106 C107 2N877-81 — 2N1929-35 — 2N2344-48 2N2322-29 * 2NI1595-99 — — 30-200 30-200 25-300 25-200 2G-200 25-400 «M O »

RG105

Abstract: ir igbt 1200V 10A SS850 sa wf IRGP20B120UD-E
Contextual Info: PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through NPT Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability

IRGP20B120UD-E

Abstract: IGBT Transistor 1200V, 25A
Contextual Info: PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through NPT Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability

RR3020

Abstract: ga128d
Contextual Info: SKM 500 GA 128 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C

Halbleiterbauelemente DDR

Abstract: BEL 639 transistor Sowjetische Halbleiter-Bauelemente KBC111 k4213 Germanium Transistor katalog radio fernsehen elektronik elektronik DDR KT904 KT372
Contextual Info: K a ta lo g sowjetischer H albleiterbauelem ente Si« linden im K a t a lo g t e il : Der hiermit unseren Lesern vorgelegte Katalog sowjetischer Transistoren, Dioden und integrierter Schaltkreise ist das Resultat enger Zusammen­ arbeit zwischen dem VEB Elektronikhandel Berlin und der Redaktion der

Contextual Info: IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V G G C IC = 40A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 25A E n-channel Applications G IRG7PH44K10DPbF

Contextual Info: IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 40A, TC =100°C tSC 10µs, TJ max = 150°C G GC VCE(ON) typ. = 1.9V @ IC = 25A E G Gate • Industrial Motor Drive

Contextual Info: IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C G G IC = 25A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 15A G IRG7PH37K10DPbF TO-247AC E

Contextual Info: IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V G G C IC = 40A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 25A E n-channel Applications G IRG7PH44K10DPbF

IEC 974-1

Abstract: SKM 400
Contextual Info: SKM 400 GB 128 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C ICRM Tcase = 25 (80) °C, tp =1 ms VGES Tvj, (Tstg ) TOPERATION ≤ T stg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C

Contextual Info: SKM 600 GB 126 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C

I.C LA 3778

Abstract: transistor on 4436 IRGP30B120KD-E AK 2118 250 KD res transistor VCE 1000V 30A GE-5045
Contextual Info: PD- 93818 IRGP30B120KD-E Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability

Contextual Info: seMIKROn Absolute Maximum Ratings Symbol Conditions ' VcES VcGR lc = 20 k£2 T c a s e = 25/80 ICM Tcase Values Units Rge °C = 25/80 °C; tp = 1 ms V ges P to t p e r IG B T , Tcase = 25 °C humidity climate AC, 1 min. DIN 40 040 DIN IEC 68 Inverse Diode

tt 2146 m

Abstract: tt 2146 IXGH9090
Contextual Info: EilXYS IXGH9090 HiPerFAST IGBT with Diode ^C 25 V CES V CE sat Lfi 48 A 600 V 2.7 V 400 ns T O -2 4 7 A D M a x im u m R a tin g s S ym bol T e s t C o n d itio n s VcHS T j = 2 5 'C to 1 5 0 X 600 V ^C G R T ,J = 2 5 'C to 1 5 0 X ; R b t = 1 M a 600

Contextual Info: s e MIKRO n Absolute Maximum Ratings Conditions ' Values Symbol VcES VcGR lc ICM V ges = 20 k£2 Tease = 25/80 °C Rge Tease = 25/80 °C; tp = 1 ms p e r IG BT, Tease = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Diodes If= - lc IfM= - IcM Tease = 25/80 °C

SK 6211

Contextual Info: seMIKROn Absolute Maximum Ratings Symbol VcES VcGR lc ICM V ges Pfot Tj, Tstg Visol humidity climate Values Conditions ' Rge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms p e r IG BT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode

100A6

Abstract: IRGP4078DPBF
Contextual Info: IRGP4078DPbF IRGP4078D-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175°C • 5 µs short circuit SOA