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Contextual Info: GE C P L E S S E Y Si si Mit Junens ADVANCE INFORMATION o \ I v c: I o K S DS40S6-2.4 GP2010 GLOBAL POSITIONING SYSTEM RECEIVER RF FRONT END The GP2010 is GEC Plessey Semiconductors' second generation RFFront-end for Global Positioning System GPS) receivers. The GP2010 uses many innovative design

smd diode S4 64a

Contextual Info: Provisional Data Sheet No. PD-9.1543A IO R Rectifier HEXFET POWER MOSFET IRFN054 N -C H A N N E L 60 Volt, 0.0200 HEXFET H E X F E T te ch n o lo g y is th e ke y to In te rn a tio n a l R ectifier’s advanced line of power MOSFET transis­ tors. The efficient geom etry achieves very low onstate resistance combined with high transconductance.

Contextual Info: RC336DDP Modem Designer’s Guide 4. DSP RAM ACCESS The modem DSP contains a 16-bit wide random access memory RAM . The host processor can access (read or write) the RAM through a 12-bit memory address in registers 1D and 1C. 4.1 IN T E R F A C E M E M O R Y A C C E S S T O DSP RAM

Contextual Info: • Philips Sem iconductors bb53T31 Q Q ^ a b l 14^ ■ APX NPN 5 GHz wideband transistors FEATURES • Product specification AUER PHILIPS/DISCRETE S b?E D ^ — BFG92A; BFG92A/X; BFG92A/XR PINNING PIN High power gain • Low noise figure • Gold metallization ensures

M5M482256

Abstract: M5M482256J
Contextual Info: MITSUBISHI LS Is M 5 M 4 8 2 2 5 6 J ,T P ,R T -7 ,-8 ,-1 0 FAST PAGE MODE 2097152-BIT DUAL-PORT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION TOP VIEW M5M482256J, TP, RT is a high speed 2097152-bit Dual-Port Dynamic Memory equipped with a 256K x 8 Dynamic RAM

M5M482128AJ

Contextual Info: MITSUBISHI LSIs M 5 M 4 8 2 1 2 8 A J , T P , R T - 7 ,- 8 ,- 1 0 FAST PAGE MODE 1 0 4 8 S 7 6 -B IT DUAL-PORT DYNAMIC RAM DESCRIPTION M 5 M 4 8 2 1 2 8 A J , T P , RT is a high speed 1 0 4 8 5 7 6 -b it Dual Port Dynam ic M em o ry equipped w ith a 1 2 8 K x