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B56B

Abstract: NL JH gd xe
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S12237-02P

Contextual Info: NEWS 01 2013 ELECTRON TUBE PRODUCTS PAGE 21 From Macro to Micro OPTO-SEMICONDUCTOR PRODUCTS Photo ICs for MOST 150 Optical Link PAGE 16 ELECTRON TUBE PRODUCTS Compact 2 W Xenon Flash Lamp Modules PAGE 25 SYSTEMS PRODUCTS Digital Camera ORCA-Flash4.0 PAGE 36

GV285

Abstract: WB2F ZX 27s GCYK RWV73 3183B kd-153 STRZ 37XE1 u286
Contextual Info: r B^bZch^dch r PeZX^[^XVi^dch K R GV9U27S Mlbga_rmp ? I AQU PZg^Zh Smucp amlqsknrgml GV9U?Ennpmv3 8Y1 GV9U27S?Ennpmv3 83:Y1 GV;U2M?Ennpmv3 73<Y1 GV;U?Ennpmv3 839Y1 GV;U27S?Ennpmv3 9Y1 GV;[2M?Ennpmv3 8Y1 GV;[?Ennpmv3 9Y1 GV;[27S?Ennpmv3 9Y -79XHG. GV9U?Ennpmv3 ;XE1 GV9U27S?Ennpmv3 <XE1 GV;U2M?Ennpmv3 :39XE1 GV;U?Ennpmv3 ;3=XE1

Contextual Info: Spec No. Date SPEC TQ3C-8EAF0-E1DEU57-00 July 15, 2010 TYPE : TCG057VGLBL-C50 < 5.7 inch VGA transmissive color TFT with LED backlight and touch panel > CONTENTS 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. Application Construction and outline Mechanical specifications

ez 748

Abstract: kd 778 7748 F799 IMZ4 EK8B
Contextual Info: 531+ =?/8696.>?<2 16; <27.C 3HDSTQHR I`^_ j\ej`k`m\@ 7;6dU LXkZ_`e^ jkXe[Xi[7< g`e JD jfZb\k I`^_ jn`kZ_`e^ ZXgXZ`kp <6U578;TB C`]liZXk\[ ZfekXZkj Fgfop j\Xc\[ ]fi XlkfdXk`Z nXm\ jfc[\i`e^ Xe[ Zc\Xe`e^ Z Q`e^c\ j`[\ jkXYc\ Xe[ cXkZ_`e^ kpg\ XmX`cXYc\ Z Fem`ifed\ekXc ]i`\e[cp gif[lZk XmX`cXYc\

ez 748

Abstract: PJ 956 kd 778 EK8B F799 EZ 649 766t
Contextual Info: 420* <>.7585-=>;1 05: ;16-B 2GCRSPGQ Y 8 Gfid D Zfe]`^liXk`fe Y I`^_ j\ej`k`m\@ 7;6dU Y LXkZ_`e^ jkXe[Xi[7< g`e JD jfZb\k Y Y I`^_ jn`kZ_`e^ ZXgXZ`kp <6U578;TB Fgfop j\Xc\[ ]fi XlkfdXk`Z nXm\ jfc[\i`e^ Xe[ Zc\Xe`e^ Y Fem`ifed\ekXc ]i`\e[cp gif[lZk XmX`cXYc\

LVLR

Abstract: IR LFN XSLH
Contextual Info: ,1 0$ 7 5& 5 1 + $ 7 ,21 $ / & 21 ( 5 ( 1 & ( 21 $ & 28 6 7 ,& 6 6 3 ( ( & + $ 1 ' 6 ,* 1 $ / 3 5 2& ( 6 6 ,1 *  ,& $ 6 6 3 3 + ( 21 ,;  $ 5,=21 $    + , *+ 3 ( 5)250 $1 &( )3 *$ ), /7 ( 56 86, 1 * 6, *0 0 2'8/$7 , 21 ( 1 &2', 1 * &KULV ' LFN

Contextual Info: SKiiP 39AC066V4 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter U:BP *: *: *:.] U+BP $P I FE K:V 1'7&- /2 &%68-& -?& 858&4 $- I FE XYOZ K: V$N I JEO K: $- I FE XYOZ K: V$N I JYE K: 2? I J G- $N MiniSKiiP 3 3-phase bridge inverter SKiiP 39AC066V4

xqg70

Abstract: 63xV
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Contextual Info: PD-96931 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67134 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67134 100K Rads (Si) RDS(on) 0.088Ω ID 19A IRHNJ63134 0.088Ω 19A 300K Rads (Si) SMD-0.5 International Rectifier’s R6TM technology provides

Contextual Info: PD-97198A 2N7598U3 IRHNJ67C30 600V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 TECHNOLOGY Product Summary Part Number IRHNJ67C30 IRHNJ63C30 Radiation Level RDS(on) 100K Rads (Si) 2.9Ω 300K Rads (Si) 2.9Ω ID 3.4A 3.4A International Rectifier’s R6TM technology provides

IRHNJ63230

Abstract: IRHNJ67230
Contextual Info: PD-96923B RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67230 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHNJ67230 IRHNJ63230 Radiation Level RDS(on) 100K Rads (Si) 0.13Ω 300K Rads (Si) 0.13Ω ID 16A 16A SMD-0.5 International Rectifier’s R6TM technology provides

2n7598

Abstract: 2N7598U3 IRHNJ67C30 2N75 IRHNJ63C30 PD-97198A
Contextual Info: PD-97198A 2N7598U3 IRHNJ67C30 600V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 TECHNOLOGY Product Summary Part Number IRHNJ67C30 IRHNJ63C30 Radiation Level RDS(on) 100K Rads (Si) 2.9Ω 300K Rads (Si) 2.9Ω ID 3.4A 3.4A International Rectifier’s R6TM technology provides

Contextual Info: PD-96923A RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67230 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHNJ67230 IRHNJ63230 Radiation Level RDS(on) 100K Rads (Si) 0.13Ω 300K Rads (Si) 0.13Ω ID 16A 16A SMD-0.5 International Rectifier’s R6TM technology provides

PD-96990

Abstract: IRHNA67264 IRHNA63264 IR 224A
Contextual Info: PD-96990 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-2 IRHNA67264 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNA67264 100K Rads (Si) RDS(on) 0.040Ω ID 50A IRHNA63264 0.040Ω 50A 300K Rads (Si) SMD-2 International Rectifier’s R6 technology provides

Contextual Info: PD-96923 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67230 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHNJ67230 IRHNJ63230 Radiation Level RDS(on) 100K Rads (Si) 0.13Ω 300K Rads (Si) 0.13Ω ID 16A 16A SMD-0.5 International Rectifier’s R6TM technology provides

keypad 4x6 matrix

Abstract: siemens M20 HHU6 B767 1LP6 B-857 B857
Contextual Info: Cellular Engine Siemens M20 / M20 Terminal Technische Beschreibung Daten Sprache SMS Fax V.24 +LQZHLVH]XU%HQXW]XQJ ,QKDOW ,QGH[  6LHPHQV,QIRUPDWLRQVXQG.RPPXQLNDWLRQVSURGXNWH +LQZHLVH]XU%HQXW]XQJ 1HEHQGHU:HUN]HXJOHLVWHRGHUGHP.XU]PHQÖ UHFKWH0DXVWDVWH GHV$FUREDW5HDGHUVVWHKHQ,KQHQIROJHQ

IRHYB63134CM

Abstract: IRHYB67134CM
Contextual Info: PD-96997 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67134CM 100K Rads (Si) 0.09Ω ID 19A IRHYB63134CM 300K Rads (Si) 19A 0.09Ω International Rectifier’s R6 TM technology provides

95837

Abstract: PD-95837 IRHY63C30CM IRHY67C30CM RG 2006 10A 600V
Contextual Info: PD-95837 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY67C30CM 600V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY67C30CM 100K Rads (Si) 3.0Ω IRHY63C30CM 300K Rads (Si) 3.0Ω ID 3.4A 3.4A International Rectifier’s R6 TM technology provides

IRHNJ67134

Abstract: IRHNJ63134
Contextual Info: PD-96931A RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67134 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67134 100K Rads (Si) RDS(on) 0.088Ω ID 19A IRHNJ63134 0.088Ω 19A 300K Rads (Si) SMD-0.5 International Rectifier’s R6TM technology provides

2n7599

Abstract: 95837 2N7599T3 IRHY67C30CM IRHY63C30CM irhy67c30
Contextual Info: PD-95837A 2N7599T3 IRHY67C30CM 600V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY67C30CM 100K Rads (Si) 3.0Ω IRHY63C30CM 300K Rads (Si) 3.0Ω ID 3.4A 3.4A International Rectifier’s R6 TM technology provides

Contextual Info: PD-96930 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67134CM 100K Rads (Si) 0.09Ω ID 19A IRHYS63134CM 300K Rads (Si) 19A 0.09Ω International Rectifier’s R6 TM technology provides

mev smd diode

Abstract: IRHNA67164 IRHNA63164 ir*7164
Contextual Info: PD-96959A RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-2 IRHNA67164 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNA67164 100K Rads (Si) RDS(on) 0.018Ω ID 56A* IRHNA63164 0.018Ω 56A* 300K Rads (Si) SMD-2 TM International Rectifier’s R6 technology provides

IRHNJ63234

Abstract: IRHNJ67234 PD-97197
Contextual Info: PD-97197 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67234 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHNJ67234 IRHNJ63234 Radiation Level RDS(on) ID 100K Rads (Si) 0.21Ω 12.4A 300K Rads (Si) 0.21Ω 12.4A SMD-0.5 International Rectifier’s R6TM technology provides