GD 08 RECTIFIERS Search Results

skb 28/08

Abstract: Semikron SKB 28/12 skb 28/04 SKB 28/12 skch 28-04 SKBH28 SKBT28 SKCH28 Semikron SKBT 28 skbz 25 12
Contextual Info: SEMIKRON V d rm Id Tease V r sm SEMIPONT 1 Controllable Bridge Rectifiers = 89 °C, full conduction 28 A V r rm 400 V 600 V 800 V 1200 V 1400 V SKBT 28/06 SKBT 28/08 SKBT 28/12 SKBT 28/14 SKBH 28/06 SKBH 28/08 SKBH 28/12 SKBH 28/14 SKBZ 28/04 SKBZ 28/06

Contextual Info: s EMIKRO n V drm Id Tease = 89 °C, full conduction V rsm V rrm 28 A 400 V 600 V SKBT 28/06 SEMIPONT 1 Controllable Bridge Rectifiers SKBZ 28/04 SKCH 28/04 SKBH 28/06 SKBZ 28/06 SKCH 28/06 800 V SKBT 28/08 SKBH 28/08 SKBZ 28/08 SKCH 28/08 1200 V SKBT 28/12

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

thyristor SCR 600V 8A

Abstract: Gate Turn-off Thyristor 8TWS04S 8TWS06S 8TWS08S AN-994
Contextual Info: Preliminary Data Sheet I2132 11/97 SAFEIR Series 8TWS.S PHASE CONTROL SCR VT < 1.2 V @ 8A ITSM = 120A VR / VD = up to 800V Description/Features The 8TWS.S SAFEIR new series of silicon controlled rectifiers in D-Pak, are specifically designed for low power switching and phase

SKT160/08C

Abstract: SKT160 034A5 semikron skt 24 SKT130 itav 50
Contextual Info: ai3bb71 S1E D D0034Ö5 b S 1 SEMIKRDN SEMIKRON INC Vrsm Vrrm Itrm s m a x im u m value s fo r c o n tin u o u s o p e ra tio n 220 A I d t/c V drm I 280 A V/ns 1 4 0 A (8 0 °C ) 400 200 S K T 130/04 C SKT 160/04 C 700 600 200 S K T 130/06 C* SKT 160/06 C

Contextual Info: A13LL71 V rsm V rrm Vdrm V 500 700 900 1100 1300 V 400 600 800 1000 1200 1500 1700 1400 1600 V/ JS 500 500 500 500 500 1000 1000 1000 Sin. It s m Tvj 180; (Tease = • • • Tvj = = = = tgd Tvj = 25 °C; tgr Vd T Vj i2t T vj 25 °C; 130 °C; 25 °C; 130 °C;

SKT300

Abstract: SKT250 SKT30 SKT300-06C SKT250/08C Semikron SKT 250/08C SKT250-06C SKT300-08C semikron skt 900 skt 2500 semikron
Contextual Info: T V rsm o | ai3bb?i aaaisas 1 | „ s e MIKRON S '\°\ — ise SEMIKRON INC - 2 . maximum values for continuous operation 375 A | 450 A | 550 A Itrms V rrm V dt /c r V drm 240 A (78 °C) 180; Tease 2=3 .°C) 285 A (77 °C) 350 A (85 °C) 200 SKT 215/04 C

SKT240

Abstract: SKT491/18E SKT491/12E SKT551/16E b337 KT340 SKT490 SKT551/18E SKT240/04D SKT240/14E
Contextual Info: SEM IKR O N 1SE INC D I A13bfa71 'T-zs-ioi Vrsm Vrrm Vdrm i\ d- t /ic r maximum values for continuous operation 600 A I 700 A (sin. 180;Tcase = • • •! DSC) 380 A (60 °C) 450 A (57 °C) Itrm s Itav V V V/ns 500 400 500 SKT 240/04 D SKT340/04 D 900

40TPS12

Abstract: 40TPS08 scr 40tps12 035H 40TPS 40TPS08A
Contextual Info: Bulletin I2107 rev. F 03/03 SAFEIR Series 40TPS. PHASE CONTROL SCR VT < 1.45V @ 40A ITSM = 500A VRRM = 800 - 1200V Description/ Features The 40TPS. SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications.

40TPS12A

Abstract: 40TPS08 40TPS12 035H 40TPS 40TPS08A 800v, 40a scr
Contextual Info: Bulletin I2107 rev. G 09/03 SAFEIR Series 40TPS. PHASE CONTROL SCR VT < 1.45V @ 40A ITSM = 500A VRRM = 800 - 1200V Description/ Features The 40TPS. SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications.

SKDH 115

Abstract: diode b71 SKUT35 skdt35
Contextual Info: SEMIKRON INC 3bE D fll3bb?l 0Q0EA2Q S M S E K G • _ ^ Id Tease VO RM = .;fullcond uction Irm s = 83 °C) 35 A (Tease V rsm 35A(94°C) V rrm 800 V 1200 V 1400 V SKDT 35/08 SKDT 35/12 SKDT 35/14 SKDH 35/08 SKDH 35/12 SKDH 35/14 Symbol Conditions Tease

thyristor SCR 600V 8A

Contextual Info: Preliminary Data Sheet 12132 11/97 Inte rn ation a l I ö R Rectifier SAFElR Series 8TWS.S PHASE CONTROL SCR vT < 1.2 V @ 8A ^TSM = 120A V R/ V D = up to 800V Description/Features The 8TWS.S SAFER new series of silicon controlled rectifiers in D-Pak, are specifically

skch26

Abstract: B1151 BH26 BH-26
Contextual Info: SEMIKRON INC 3bE » • fliabb?! OGGEfllb 3 ■ SEKG s e MIKRDn r r - Z 5 V drm Id Tease = 89 °C, full conduction V rsm V rrm 28 A 400 V SKBT 26/04 S K B H 26/04 S K C H 26/04 600 V S K B T 26/06 S K B H 26/06 S K C H 26/06 S K C H 27/06 800 V SKBT 26/08

IRF7524D1

Contextual Info: PD -91648B IRF7524D1 PRELIMINARY FETKYTM MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = -20V

IRF7521D1

Abstract: ba 7321
Contextual Info: PD- 91646B IRF7521D1 PRELIMINARY FETKY MOSFET / Schottky Diode ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A

IRF7523D1

Contextual Info: PD- 91647C IRF7523D1 FETKY MOSFET / Schottky Diode ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = 30V

40TPS12A

Abstract: 40TPS12 scr 40tps12 035H 40TPS 40TPS08 40TPS08A 800v, 40a scr
Contextual Info: Bulletin I2107 rev. G 09/03 SAFEIR Series 40TPS. PHASE CONTROL SCR VT < 1.45V @ 40A ITSM = 500A VRRM = 800 - 1200V Description/ Features The 40TPS. SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications.

IRF7523D1

Contextual Info: PD- 91647C IRF7523D1 PRELIMINARY FETKY MOSFET / Schottky Diode ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A

28xq

Abstract: SKBT28/08
Contextual Info: s e MIKRON V drm V rsm V rrm I d T e a se = 89 °C, full conduction 28 A SKBZ 28/04 SKCH 28/04 600 V SKBT 28/06 SKBH 28/06 SKBZ 28/06 SKCH 28/06 800 V SKBT 28/08 SKBH 28/08 SKBZ 28/08 SKCH 28/08 1200 V SKBT 28/12 SKBH 28/12 SKBZ 28/12 SKCH 28/12 1400V SKBT 28/14

96176

Contextual Info: PD -96176 IRF7524D1GPbF FETKYTM MOSFET & Schottky Diode l l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint Lead-Free Halogen-Free A A S G 1 8 K 2 7 K 3 6

EIA-541

Abstract: xf 017 A10160 ma892
Contextual Info: PD -96176 IRF7524D1GPbF FETKYTM MOSFET & Schottky Diode l l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint Lead-Free Halogen-Free 1 8 K A 2 7 K S 3 6 D G

34A65

Abstract: skch4012 P5100 semikron skch 20 12 Semikron SKB b 80 semikron skd 30 P13125 semikron skb 30 semikron skb 60 25A45
Contextual Info: S EM IK R O N D V drm V rsm Tease = .°C, full c o n d u c tio n 40 A (92 °C) 40A (92°C ) 60A (86°C ) 100A(84°C) 400 V SKCH 40/04 SKBT 40/04 SKDT 60/04 SKDT 100/04 800 V 1200 V 1400 V SKCH 40/08 SKCH 40/12 SKCH 40/14 SKBT 40/08 SKBT 40/12 SKBT 40/14

2sd 5200

Abstract: SKT300 skt 2500 semikron skt 450 semikron skt 24 SKT250 to-209ad C450A M24-P 2sd 209 l
Contextual Info: S1E D Ö13bb71 DOOBMfib a 77 s e m ik r g n SEMIKRON INC V rsm Itrm s V rrm iV-dt i/or V drm maximum values for continuous operation 450 A I 550 A (sin. 180; Tease “ . .°C) 285 A (77 °C) 350 A (85 °C) Ita v V V V/ns 500 400 200 SKT250/04 C SKT300/04 C

Contextual Info: s e m ik r d n fll3bt.71 GOOS'm 732 • V rsm V rrm V drm W er V V V/|is 500 700 900 1300 1500 1700 400 600 800 1200 1400 1600 500 500 500 1000 1000 1000 Itrm s maximum values for continuous operation 220 A | 280 A Itav (sin. 180; case = . . . °C) 140 A (80 °C)