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Microchip Technology Inc DSC1121CI2-132.0000 - Rail/Tube (Alt: DSC1121CI2-132.0000)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	DSC1121CI2-132.0000	Tube		30 Weeks	220	1 - 10 - 100 - 1000 $0.87 10000 $0.82	Buy Now
Mouser Electronics	DSC1121CI2-132.0000					1 - 10 - 100 - 1000 $0.83 10000 $0.83	Get Quote
Microchip Technology Inc	DSC1121CI2-132.0000	Tube		30 Weeks		1 $1.01 10 $1.01 100 $0.76 1000 $0.74 10000 $0.73	Buy Now
Master Electronics	DSC1121CI2-132.0000					1 - 10 - 100 $0.97 1000 $0.84 10000 $0.79	Buy Now
Microchip Technology Inc DSC1121CI2-132.0000T MEMS OSC, LVCMOS, 132MHz, 25PPM, 2.5-3.3V, -40 to 85C, 3.2 x 2.5mm - Tape and Reel (Alt: DSC1121CI2-132.0000T)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	DSC1121CI2-132.0000T	Tape & Reel		5 Weeks	1,000	1 - 10 - 100 - 1000 $0.94 10000 $0.85	Buy Now
Mouser Electronics	DSC1121CI2-132.0000T					1 - 10 - 100 - 1000 $0.83 10000 $0.83	Get Quote
Microchip Technology Inc	DSC1121CI2-132.0000T	Tape & Reel		30 Weeks		1 $1.01 10 $1.01 100 $0.76 1000 $0.74 10000 $0.73	Buy Now
Master Electronics	DSC1121CI2-132.0000T					1 - 10 - 100 - 1000 $0.89 10000 $0.89	Buy Now
ifm efector inc LI2132 BINARY OIL LEVEL SENSOR; PNP/NPN; SWITCHING SIGNAL; IO-LINK; PROBE LENGTH 273 MM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	LI2132	Bulk		3 Weeks	1	1 $326.96 10 $304.07 100 $304.07 1000 $304.07 10000 $304.07	Get Quote

I2132 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
OZ 9936 Contextual Info: Preliminary Data Sheet I2132 rev. B 03/99 SAFEIR Series 8TWS.S PHASE CONTROL SCR VT < 1.2 V @ 8A ITSM = 120A VR / VD = up to 800V Description/Features The 8TWS.S SAFEIR new series of silicon controlled rectifiers in D-Pak, are specifically designed for low power switching and phase	Original	i2132 oz 9936	PDF
OZ 9936 Abstract: 322 smd code thyristor SCR 600V 8A igt 50 8TWS04S 8TWS06S 8TWS08S AN-994 44 SMD dpak Contextual Info: Preliminary Data Sheet I2132 rev. C 10/99 SAFEIR Series 8TWS.S PHASE CONTROL SCR VT < 1.2 V @ 8A ITSM = 120A VR / VD = up to 800V Description/Features The 8TWS.S SAFEIR new series of silicon controlled rectifiers in D-Pak, are specifically designed for low power switching and phase	Original	i2132 oz 9936 322 smd code thyristor scr 600v 8a igt 50 +58tws04s 8tws06s 8tws08s an-994 44 smd dpak	PDF
thyristor SCR 600V 8A Abstract: Gate Turn-off Thyristor 8TWS04S 8TWS06S 8TWS08S AN-994 Contextual Info: Preliminary Data Sheet I2132 11/97 SAFEIR Series 8TWS.S PHASE CONTROL SCR VT < 1.2 V @ 8A ITSM = 120A VR / VD = up to 800V Description/Features The 8TWS.S SAFEIR new series of silicon controlled rectifiers in D-Pak, are specifically designed for low power switching and phase	Original	i2132 o-252aa thyristor scr 600v 8a gate turn-off thyristor +48tws04s 8tws06s 8tws08s an-994	PDF
Contextual Info: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2C !3 A2EC !38 1 C2 36+436,61234286544 (-./606( 1-6234606&56,61-676065 8819365:353 " F3D3511;4C3 " 5;D326%46$<=;13' " ?C932932	Original	23456784539a6bcdef 345674f 976bcdef cd328 +636b1322 268cd63e c936b 8cd63e606 5356g1324 2368cd63e	PDF
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1213-2 TECHNICAL DATA FEATURES: • HIGH POWER PidB = 33-5 dBm at 12.7 GHz to 13.2 GHz ■ HIGH GAIN GidB = 7.5 dB at 12.7 GHz to 13.2 GHz ■ BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE	OCR Scan	tim1213-2 i213-2	PDF
Contextual Info: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2C 3 A2EC 38 11 C2 36+436,61234286544 (-./606( 1-623460656,61-67606!5 8819365:353 ! F3D3511;4C3 ! 5;D326%46$<=;13' ! ?C932932	Original	23456784539a6bcdef 345674f 976bcdef cd328 +636b1322 268cd63e c936b 8cd63e606 5356g1324 2368cd63e	PDF
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DD800S33K2C Vorläufige Daten / preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values #32F5F361F3D132214DDDC 2313FF36134$62332364C3	Original	dd800s33k2c 03265f 1231423567896ab2c3d6ef32	PDF
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DD400S33KL2C Vorläufige Daten / preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values #32E5E36$1E3F132214FFF% 2313EE361346233236B4%3	Original	dd400s33kl2c 13265e	PDF
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET T IM 1213-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G-icb = 7.5 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package	OCR Scan	10t7bs0	PDF
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DD200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $32F5F36%1F&3D132214DDDC 2313FF3613462332364C3	Original	dd200s33k2c 13265f	PDF