GB10SLT12-CAL SPICE Search Results

GB10SLT12-CAL SPICE

Abstract: high-temperature-sic-bare-die
Contextual Info: Die Datasheet GB10SLT12-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB10SLT12-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 20-SEP-2013 $ * *

GB10SLT12-CAL

Abstract: high-temperature-sic-bare-die
Contextual Info: Die Datasheet GB10SLT12-CAL Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 1200 V 25 A 31 nC Features •       1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability

Contextual Info: Electrical Datasheet* GB10SLT12-CAL Silicon Carbide Power Schottky Diode VRRM VF IF QC = = = = 1200 V 1.55 V 10 A 52 nC Features •     1200 V Schottky rectifier 175 °C maximum operating temperature Positive temperature coefficient of VF Fast switching speeds