GATE-SOURCE ZENER Search Results

gate-source zener

Abstract: p-channel 200V TC6320 TC6320TG high voltage pulser
Contextual Info: TC6320 Initial Release N- and P-Channel Enhancement-Mode MOSFET Pair Features General Description Integrated gate-source resistor Integrated gate-source zener diode Low threshold

mark G1 SOT-23

Abstract: sot-23 MARKING CODE G1 G1 SOT23 sot-23 MARKING CODE IGs DSPD-5SOT23K1 LP1030
Contextual Info: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description The LP1030D is a dual high voltage P-channel enhancementmode normally-off lateral MOSFETs. Each MOSFET has integrated gate-to-source resistor and gate-to-source Zener

SOT-23 MOSFET P-CHANNEL a1 1- mark

Abstract: L21e
Contextual Info: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description The LP1030D is a dual high voltage P-channel enhancementmode normally-off lateral MOSFET. Each MOSFET has integrated gate-to-source resistor and gate-to-source Zener

Contextual Info: Supertex inc. TC6320 N- and P-Channel Enhancement-Mode MOSFET Pair Features General Description Integrated GATE-to-SOURCE resistor Integrated GATE-to-SOURCE Zener diode Low threshold Low on-resistance Low input capacitance Fast switching speeds Free from secondary breakdown

PMOSFET

Abstract: tc8020 PEAK TRAY tx qfn 8x8 nmosfet
Contextual Info: Supertex inc. TC8020 Six Pair, N- and P-Channel Enhancement-Mode MOSFET Features ►► High voltage, vertical DMOS technology ►► Integrated gate-to-source resistor ►► Integrated gate-to-source Zener diode ►► Typical peak output +/-3.5A at 50V

tray qfn 8x8

Abstract: TC8020 nmosfet TC8020K6-G
Contextual Info: Supertex inc. TC8020 Six Pair, N- and P-Channel Enhancement-Mode MOSFET Features ►► High voltage, vertical DMOS technology ►► Integrated gate-to-source resistor ►► Integrated gate-to-source Zener diode ►► Typical peak output +/-3.5A at 50V

TC8220

Abstract: N mosfet 100v 500A 7SN2 TC8220K6-G DFN PACKAGE thermal resistance
Contextual Info: Supertex inc. TC8220 Two Pair, N- and P-Channel Enhancement-Mode MOSFET Features ► ► ► ► ► ► ► General Description High voltage Vertical DMOS technology Integrated gate-to-source resistor Integrated gate-to-source Zener diode Low threshold, Low on-resistance

Contextual Info: TC7320 Six Pair, N- and P-Channel Enhancement-Mode MOSFET Features General Description Six N- and P-channel MOSFET pairs Integrated gate-to-source resistor Integrated gate-to-source Zener diode Low threshold Low on-resistance Low input capacitance Fast switching speeds

TC8220K6-G

Abstract: TC8220 P-MOSFET DFN 3x4 GN112 A01141 logic gate P-mosfet N-mosfet P-mosfet pair 125OC MD1822
Contextual Info: Supertex inc. TC8220 Two Pair, N- and P-Channel Enhancement-Mode MOSFET Features ► ► ► ► ► ► ► General Description High voltage Vertical DMOS technology Integrated gate-to-source resistor Integrated gate-to-source Zener diode Low threshold, Low on-resistance

Contextual Info: Supertex inc. TC8220 Two Pair, N- and P-Channel Enhancement-Mode MOSFET Features General Description ►► High voltage Vertical DMOS technology ►► Integrated gate-to-source resistor ►► Integrated gate-to-source Zener diode ►► Low threshold, Low on-resistance

TC8220

Abstract: N-mosfet P-mosfet pair MD1822 7SN2
Contextual Info: Supertex inc. TC8220 Two Pair, N- and P-Channel Enhancement-Mode MOSFET Features ►► ►► ►► ►► ►► ►► ►► General Description High voltage Vertical DMOS technology Integrated gate-to-source resistor Integrated gate-to-source Zener diode

SOT-23 MOSFET P-CHANNEL a1 1- mark

Contextual Info: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description ►► 300V breakdown voltage ►► Integrated gate-to-source resistor ►► Integrated gate-to-source Zener diode ►► Low input capacitance ►► Fast switching speeds

Contextual Info: Supertex inc. TC6320 N- and P-Channel Enhancement-Mode MOSFET Pair Features ►► Integrated GATE-to-SOURCE resistor ►► Integrated GATE-to-SOURCE Zener diode ►► Low threshold ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds

Contextual Info: Supertex inc. TC6320 N- and P-Channel Enhancement-Mode MOSFET Pair Features ►► Integrated GATE-to-SOURCE resistor ►► Integrated GATE-to-SOURCE Zener diode ►► Low threshold ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds

SiC JFET

Abstract: ESD "p-well" n-well" varactor diode parameter 0.6 um cmos process depletion nmos barrier varactor X-Fab
Contextual Info: 0.6 µm BiCMOS Process MIXED-SIGNAL FOUNDRY EXPERTS XB06 Modular 0.6µm BiCMOS Process Module Overview MOS transistor NMOS PMOS CORE CORE 5V double poly/metal BiCMOS module Source Source Drain Drain 0.5µm enhanced bipolar module Gate Gate n+ p+ n+ p+ CAPPOLY

Contextual Info: TC6215 N- and P-Channel Enhancement-Mode Dual MOSFET Features Back to back gate-source Zener diodes Guaranteed RDS ON at 4.0V gate drive Low threshold Low on-resistance Independent N- and P-channels Electrically isolated N- and P-channels Low input capacitance

Contextual Info: IC IC SMD Type Mesh Overlay Power MOSFET KTS1C1S250 Features Typical RDS on (N-Channel)=0.9 Typical RDS(on) (N-Channel)=2.1 Gate-source zener diode Standard outline for easy automated surface mount assembly Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage (VGS = 0)

Contextual Info: NUD3048 FET Switch The NUD3048 provides a single device solution for a number of applications requiring a low power, high voltage, FET switch. The package includes a gate resistor and gate to source zener clamp. This switch can accommodate a wide range of input voltages, making it

0.18 um CMOS parameters

Abstract: poly silicon resistor pepi c 0.18 um CMOS technology World transistors
Contextual Info: 1.0 µm CMOS Process XC10 1.0 µm Mixed Signal CMOS Technology Schematic cross section NMOS Poly-Poly-CAP Broad variety of combinable process elements available: PMOS - Double poly capacitor Source Drain Source Drain Gate n+ - High ohmic and low TC resistors

STB3NC90

Abstract: STB3NC90Z 1574T
Contextual Info: STB3NC90Z N-CHANNEL 900V - 3.2Ω - 3.5A D2PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STB3NC90 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE

U401 mosfet

Abstract: 3N163 SPICE P-Channel Depletion Mode FET a7 P-CHANNEL FET J506 "Dual npn Transistor" 2N3955 LS301 J201 N-channel JFET to 90 J201 spice
Contextual Info: 3N163, 3N164 P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltage

20A marking zener diode

Contextual Info: TC6215 N- and P-Channel Enhancement-Mode Dual MOSFET Features ► ► ► ► ► ► ► ► ► ► Back to back gate-source Zener diodes Guaranteed RDS ON at 4.0V gate drive Low threshold Low on-resistance Independent N- and P-channels Electrically isolated N- and P-channels

TC6215

Contextual Info: TC6215 N- and P-Channel Enhancement-Mode Dual MOSFET Features ► ► ► ► ► ► ► ► ► ► Back to back gate-source Zener diodes Guaranteed RDS ON at 4.0V gate drive Low threshold Low on-resistance Independent N- and P-channels Electrically isolated N- and P-channels

injector MOSFET driver

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SMARTDISCRETES Internally Clamped, Current Limited N-Channel Logic Level Power MOSFET MLP1N06CL Motorola Preferred Device These SMARTDISCRETES devices feature current limiting for short circuit protection, an integral gate-to-source clamp for ESD protection and gate-to-drain