GATE-SOURCE ZENER Search Results

mark G1 SOT-23

Abstract: sot-23 MARKING CODE G1 G1 SOT23 sot-23 MARKING CODE IGs DSPD-5SOT23K1 LP1030
Contextual Info: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description The LP1030D is a dual high voltage P-channel enhancementmode normally-off lateral MOSFETs. Each MOSFET has integrated gate-to-source resistor and gate-to-source Zener

Contextual Info: Supertex inc. TC6320 N- and P-Channel Enhancement-Mode MOSFET Pair Features General Description Integrated GATE-to-SOURCE resistor Integrated GATE-to-SOURCE Zener diode Low threshold Low on-resistance Low input capacitance Fast switching speeds Free from secondary breakdown

PMOSFET

Abstract: tc8020 PEAK TRAY tx qfn 8x8 nmosfet
Contextual Info: Supertex inc. TC8020 Six Pair, N- and P-Channel Enhancement-Mode MOSFET Features ►► High voltage, vertical DMOS technology ►► Integrated gate-to-source resistor ►► Integrated gate-to-source Zener diode ►► Typical peak output +/-3.5A at 50V

tray qfn 8x8

Abstract: TC8020 nmosfet TC8020K6-G
Contextual Info: Supertex inc. TC8020 Six Pair, N- and P-Channel Enhancement-Mode MOSFET Features ►► High voltage, vertical DMOS technology ►► Integrated gate-to-source resistor ►► Integrated gate-to-source Zener diode ►► Typical peak output +/-3.5A at 50V

TC8220

Abstract: N mosfet 100v 500A 7SN2 TC8220K6-G DFN PACKAGE thermal resistance
Contextual Info: Supertex inc. TC8220 Two Pair, N- and P-Channel Enhancement-Mode MOSFET Features ► ► ► ► ► ► ► General Description High voltage Vertical DMOS technology Integrated gate-to-source resistor Integrated gate-to-source Zener diode Low threshold, Low on-resistance

Contextual Info: TC7320 Six Pair, N- and P-Channel Enhancement-Mode MOSFET Features General Description Six N- and P-channel MOSFET pairs Integrated gate-to-source resistor Integrated gate-to-source Zener diode Low threshold Low on-resistance Low input capacitance Fast switching speeds

TC8220K6-G

Abstract: TC8220 P-MOSFET DFN 3x4 GN112 A01141 logic gate P-mosfet N-mosfet P-mosfet pair 125OC MD1822
Contextual Info: Supertex inc. TC8220 Two Pair, N- and P-Channel Enhancement-Mode MOSFET Features ► ► ► ► ► ► ► General Description High voltage Vertical DMOS technology Integrated gate-to-source resistor Integrated gate-to-source Zener diode Low threshold, Low on-resistance

Contextual Info: Supertex inc. TC8220 Two Pair, N- and P-Channel Enhancement-Mode MOSFET Features General Description ►► High voltage Vertical DMOS technology ►► Integrated gate-to-source resistor ►► Integrated gate-to-source Zener diode ►► Low threshold, Low on-resistance

SOT-23 MOSFET P-CHANNEL a1 1- mark

Contextual Info: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description ►► 300V breakdown voltage ►► Integrated gate-to-source resistor ►► Integrated gate-to-source Zener diode ►► Low input capacitance ►► Fast switching speeds

Contextual Info: TC6215 N- and P-Channel Enhancement-Mode Dual MOSFET Features Back to back gate-source Zener diodes Guaranteed RDS ON at 4.0V gate drive Low threshold Low on-resistance Independent N- and P-channels Electrically isolated N- and P-channels Low input capacitance

Contextual Info: IC IC SMD Type Mesh Overlay Power MOSFET KTS1C1S250 Features Typical RDS on (N-Channel)=0.9 Typical RDS(on) (N-Channel)=2.1 Gate-source zener diode Standard outline for easy automated surface mount assembly Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage (VGS = 0)

20A marking zener diode

Contextual Info: TC6215 N- and P-Channel Enhancement-Mode Dual MOSFET Features ► ► ► ► ► ► ► ► ► ► Back to back gate-source Zener diodes Guaranteed RDS ON at 4.0V gate drive Low threshold Low on-resistance Independent N- and P-channels Electrically isolated N- and P-channels

Contextual Info: NUD3048 FET Switch 100 V, 800 mW, N−Channel, TSOP−6 The NUD3048 provides a single device solution for a number of applications requiring a low power, high voltage, FET switch. The package includes a gate resistor and gate to source zener clamp. This switch can accommodate a wide range of input voltages, making it

NUD3048

Abstract: NUD3048MT1 FET MARKING TSOP6 Marking Code 17
Contextual Info: NUD3048 FET Switch 100 V, 800 mW, N−Channel, TSOP−6 The NUD3048 provides a single device solution for a number of applications requiring a low power, high voltage, FET switch. The package includes a gate resistor and gate to source zener clamp. This switch can accommodate a wide range of input voltages, making it

C6320

Abstract: zener diode reverse breakdown voltage 4.5V 620 tg diode
Contextual Info: TC6320 N- and P-Channel, Enhancement-Mode MOSFET Pair Features General Description ► ► ► ► ► ► ► ► ► The Supertex TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in an 8-Lead SOIC package. Both MOSFETs have integrated gate-toSource resistors and gate-to-Source Zener diode clamps

C6320

Contextual Info: TC6320 N- and P-Channel, Enhancement-Mode MOSFET Pair Features General Description ► ► ► ► ► ► ► ► ► The Supertex TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN packages. Both MOSFETs have integrated gate-tosource resistors and gate-to-source Zener diode clamps

Contextual Info: TC6320 N- and P-Channel Enhancement-Mode MOSFET Pair Features General Description ► ► ► ► ► ► ► ► ► The Supertex TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN packages. Both MOSFETs have integrated gate-tosource resistors and gate-to-source Zener diode clamps

XM116

Abstract: M116 M116 CALOGIC
Contextual Info: Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier LLC M116 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Low IGSS • Integrated Zener Clamp for Gate Protection Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 30V

C6320

Abstract: 620 tg diode
Contextual Info: TC6320 N- and P-Channel Enhancement-Mode MOSFET Pair Features General Description ► ► ► ► ► ► ► ► ► The Supertex TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN packages. Both MOSFETs have integrated gate-tosource resistors and gate-to-source Zener diode clamps

TPIC1504

Contextual Info: TPIC1504 QUAD AND HEX POWER DMOS ARRAY S LIS 057-O C TO BE R 1996 Low rDS on : 0.25 £2 Typ (Full H-Bridge) 0.15 Q. Typ (Triple Half H-Bridge) DW PACKAGE (TOP VIEW ) 1 2 1 3 3 5 4 2 5 OUTPUT [ GATE C[ GATE B[ GATE B[ GND [ OUTPUT [ SOURCE[ OUTPUT [ GND [ GÄTE B[

2SK551

Abstract: 2SK559 2SJ130 2SJ169 2SJ181 2SJ186 2SK1327 2SK1334 2SK1335 2SK1620
Contextual Info: HITACHI 1.5.2 7 Dll-Series Dll-Series MOSFETs are the second generation products for Hitachi switching devices. These devices incorporate built-in gate to source back to back zener diode protection to increased ESD ruggedness. Dll-Series presents : • higher lyfsl between 2 & 3 times.

TL 078

Abstract: diode F4 6A STW7NC90Z
Contextual Info: STW7NC90Z N-CHANNEL 900V - 1.55Ω - 6A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW7NC90Z • ■ ■ ■ ■ ■ VDSS RDS on ID 900 V < 1.9 Ω 6A TYPICAL RDS(on) = 1.55Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED

STB3NC90

Abstract: STB3NC90Z K900
Contextual Info: STB3NC90Z N-CHANNEL 900V - 3.2Ω - 3.5A D2PAK Zener-Protected PowerMESH III MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STB3NC90 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED

52A zener

Abstract: STW6NC90Z TL 078
Contextual Info: STW6NC90Z N-CHANNEL 900V - 2.1Ω - 5.2A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW6NC90Z • ■ ■ ■ ■ ■ VDSS RDS on ID 900 V < 2.5 Ω 5.2A TYPICAL RDS(on) = 2.1Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED