GATE-DRAIN ZENER Search Results

U401 mosfet

Abstract: 3N163 SPICE P-Channel Depletion Mode FET a7 P-CHANNEL FET J506 "Dual npn Transistor" 2N3955 LS301 J201 N-channel JFET to 90 J201 spice
Contextual Info: 3N163, 3N164 P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltage

P-Channel Depletion Mode FET

Abstract: 2n3955 transistor spice TRANSISTOR 2n3955 J201 N-channel JFET to 90 dual P-Channel JFET jfet n channel ultra low noise low noise dual P-Channel JFET Ultra High Input Impedance N-Channel JFET Amplifier monolithic dual jfet transistor u402 transistor
Contextual Info: 3N165, 3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2)

SiC JFET

Abstract: ESD "p-well" n-well" varactor diode parameter 0.6 um cmos process depletion nmos barrier varactor X-Fab
Contextual Info: 0.6 µm BiCMOS Process MIXED-SIGNAL FOUNDRY EXPERTS XB06 Modular 0.6µm BiCMOS Process Module Overview MOS transistor NMOS PMOS CORE CORE 5V double poly/metal BiCMOS module Source Source Drain Drain 0.5µm enhanced bipolar module Gate Gate n+ p+ n+ p+ CAPPOLY

Contextual Info: Supertex inc. TC7920 Two Pair, N- and P-Channel Enhancement-Mode MOSFET with Drain-Diodes Features General Description ►► High voltage Vertical DMOS technology ►► Integrated drain output high voltage diodes ►► Integrated gate-to-source resistor

0.18 um CMOS parameters

Abstract: poly silicon resistor pepi c 0.18 um CMOS technology World transistors
Contextual Info: 1.0 µm CMOS Process XC10 1.0 µm Mixed Signal CMOS Technology Schematic cross section NMOS Poly-Poly-CAP Broad variety of combinable process elements available: PMOS - Double poly capacitor Source Drain Source Drain Gate n+ - High ohmic and low TC resistors

A121010

Abstract: N mosfet 100v 500A
Contextual Info: Supertex inc. TC7920 Two Pair, N- and P-Channel Enhancement-Mode MOSFET with Drain-Diodes Features ► ► ► ► ► ► ► ► General Description High voltage Vertical DMOS technology Integrated drain output high voltage diodes Integrated gate-to-source resistor

P-MOSFET

Abstract: TC7920 ir 222 125OC MD1822 C7920
Contextual Info: Supertex inc. TC7920 Two Pair, N- and P-Channel Enhancement-Mode MOSFET with Drain-Diodes Features ► ► ► ► ► ► ► ► General Description High voltage Vertical DMOS technology Integrated drain output high voltage diodes Integrated gate-to-source resistor

Contextual Info: Supertex inc. TC7920 Two Pair, N- and P-Channel Enhancement-Mode MOSFET with Drain-Diodes Features ► ► ► ► ► ► ► ► General Description High voltage Vertical DMOS technology Integrated drain output high voltage diodes Integrated gate-to-source resistor

TC9184AP

Contextual Info: TC74VHC03F/FN/FS TENTATIVE DATA QUAD 2 • INPUT NAND GATE OPEN DRAIN The TC74VHC03 is an advanced high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while m aintaining the CMOS low

injector MOSFET driver

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SMARTDISCRETES Internally Clamped, Current Limited N-Channel Logic Level Power MOSFET MLP1N06CL Motorola Preferred Device These SMARTDISCRETES devices feature current limiting for short circuit protection, an integral gate-to-source clamp for ESD protection and gate-to-drain

XM116

Abstract: M116 M116 CALOGIC
Contextual Info: Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier LLC M116 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Low IGSS • Integrated Zener Clamp for Gate Protection Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 30V

M116

Abstract: XM116 M116 CALOGIC
Contextual Info: Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier CORPORATION M116 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Low IGSS • Integrated Zener Clamp for Gate Protection Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 30V

RF800

Abstract: MRF151A Transformer Communication Concepts rf power amplifier transistor with s-parameters RF800 transformer RF-800 Unelco Metal Clad Micas 1N5347 2204B AN211A
Contextual Info: ELECTRICAL CHARACTERISTICS TC = 25°C unless otherwise noted. Characteristic Symbol Min Typ Max Unit V(BR)DSS 125 — — Vdc Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) IDSS — — 5.0 mAdc Gate–Body Leakage Current (VGS = 20 V, VDS = 0) IGSS

ultra low igss pA mosfet

Abstract: n-channel JFET sot23-6 Ultra High Input Impedance N-Channel JFET Amplifier N channel jfet 3N191 SPICE P-Channel Depletion Mode FET 2n4117 jfet jfet transistor 2n4391 U422 ultra low igss pA mosfet n channel
Contextual Info: LS4117, 4118, 4119 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES LOW POWER IDSS<90 µA 2N4117 MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1)

Contextual Info: AOT502 Clamped N-Channel MOSFET General Description Product Summary AOT502 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.

250HMA

Contextual Info: AOT500L N-Channel Enhancement Mode Field Effect Transistor General Description Features AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.

gate to drain clamp

Abstract: 30A 44 zener diode gate-drain zener AOT500 8017M
Contextual Info: AOT500 N-Channel Enhancement Mode Field Effect Transistor General Description Features AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.

mosfet zener diode

Contextual Info: Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier M116 FEATURES ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified • Low I gss • Integrated Zener Clamp for Gate Protection Drain to Source V o lta g e .30V

AOT500

Abstract: gate to drain clamp
Contextual Info: AOT500 N-Channel Enhancement Mode Field Effect Transistor General Description Features AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.

AOT500

Abstract: gate to drain clamp
Contextual Info: AOT500L N-Channel Enhancement Mode Field Effect Transistor General Description Features AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.

Contextual Info: Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier mm FEATURES ABSO LUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified • Low Ig s s • Integrated Zener Clamp for Gate Protection Drain to Source V o lta g e . 30V

Contextual Info: SMNY2Z30 Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • High voltage: BVDDS=300V Min.  Low gate charge: Qg=2.9nC (Typ.)  Low drain-source On resistance: RDS(on)=8  Built-in protection zener diode  RoHS compliant device

Contextual Info: IC IC SMD Type Mesh Overlay Power MOSFET KTS1C1S250 Features Typical RDS on (N-Channel)=0.9 Typical RDS(on) (N-Channel)=2.1 Gate-source zener diode Standard outline for easy automated surface mount assembly Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage (VGS = 0)

2Z30

Abstract: smny2z30
Contextual Info: SMNY2Z30 Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • High voltage: BVDDS=300V Min.  Low gate charge: Qg=2.9nC (Typ.)  Low drain-source On resistance: RDS(on)=8Ω (Max.)  Built-in protection zener diode  RoHS compliant device