GATE DRIVE WITH TRANSISTOR Search Results

FAN7393A

Contextual Info: FAN7393A Half-Bridge Gate Drive IC Features Description  Floating Channel for Bootstrap Operation to +600V The FAN7393A is a half-bridge gate-drive IC with shutdown and programmable dead-time control functions that can drive high-speed MOSFETs and Isolated Gate

a316j

Abstract: A 316J HCPL-316J-500E IGBT DRIVER SCHEMATIC IGBT DRIVER SCHEMATIC 3 PHASE SOD87 footprint a-316j pi controller with op amp circuit diagram 3 phase inverters circuit diagram igbt HCPL-316J
Contextual Info: HCPL-316J 2.5 Amp Gate Drive Optocoupler with Integrated VCE Desaturation Detection and Fault Status Feedback Data Sheet Description Features (continued) Avago’s 2.5 Amp Gate Drive Optocoupler with Integrated Desaturation (VCE) Detection and Fault Status Feedback

igbt with pulse transformer driver

Abstract: igbt transformer driver high voltage gate drive transformer IGBT Drivers Transistors multiple mosfet gate driver UC3725 gate drive protection inverter gate drive pulse transformer gate DRIVER IGBT IGBT driven circuits
Contextual Info: DN-35 Design Notes IGBT DRIVE USING MOSFET GATE DRIVERS John A. O’Connor IGBT Drive Requirements opposing devices can occur in such circuits, often with catastrophic results if proper gate drive and layout precautions are not followed. This behavior is caused by parasitic collector to gate miller

FAN73933

Abstract: JESD51-2 JESD51-3 induction heating mosfet driver circuits
Contextual Info: FAN73933 Half-Bridge Gate Drive IC Features Description „ Floating Channel for Bootstrap Operation to +600V The FAN73933 is a half-bridge, gate-drive IC with programmable dead-time control functions that can drive high-speed MOSFETs and IGBTs operating up to +600V.

Contextual Info: Application Note AN-10B: Driving SiC Junction Transistors SJT : Two-Level Gate Drive Concept Introduction Two-Level SJT Gate Drive Circuit GeneSiC Semiconductor is commercializing 1200 V and 1700 V SiC Junction Transistors (SJTs) with current ratings ranging from 3 A to 50

FAN7393

Abstract: JESD51-2 JESD51-3
Contextual Info: FAN7393 Half-Bridge Gate Drive IC Features Description „ Floating Channel for Bootstrap Operation to +600V The FAN7393 is a half-bridge, gate-drive IC with shutdown and programmable dead-time control functions that can drive high-speed MOSFETs and IGBTs operating up to +600V. It has a buffered output stage with all

FAN73932

Abstract: igbt induction heating generator FAN73932M FAN73932MX JESD51-2 JESD51-3 SOIC127P600X175-8M
Contextual Info: FAN73932 Half-Bridge Gate Drive IC Features Description „ Floating Channel for Bootstrap Operation to +600V The FAN73932 is a half-bridge, gate-drive IC with shutdown and dead-time functions which can drive highspeed MOSFETs and IGBTs that operate up to +600V. It

world transistor

Abstract: JAPAN transistor World transistors
Contextual Info: Renesas Technology Improves Transistor Performance with New Low-cost Fabrication Technology for 45-nanometer Process Generation and Beyond Redesigned p-type transistor with two-layer metal gate and n-type transistor with polysilicon gate achieve world top-level drive performance

BG2A

Abstract: circuit diagram of pcb fault detector IGBT DRIVER SCHEMATIC VLA502-01 igbt short circuit protection schematic diagram OPTO COUPLER VLA500-01 VLA502 bg2a-nfh igbt desaturation driver schematic
Contextual Info: Application Second Release: December 23, 2006 NOTES: BG2A – Universal Gate Drive Prototype Board Description: BG2A is a fully isolated two channel gate drive circuit designed for use with dual IGBT modules. The BG2A utilizes Powerex VLA500-01 or VLA502-01 hybrid gate drivers to provide efficient switching of

Contextual Info: Application Fourth Release: July 31, 2012 NOTES: *Refer to ordering information for included components. BG2A – Universal Gate Drive Prototype Board Description: BG2A is a fully isolated two channel gate drive circuit designed for use with dual IGBT modules.

100 amp npn mosfet

Abstract: 100 amp mosfet 400v 20 amp mosfet 500V 25A Mosfet pnp 500v OM8001SC OM8002SC OM8003SC OM8004SC OM803
Contextual Info: T M3E D bTÛ'JÜTB OOQQSTb 7 IOMNI OM 8OOISC OM8003SC OM8002SC OM8004SC POWER MOSFET WITH GATE DRIVE CIRCUIT IN 6-PIN HERMETIC PACKAGE OMNIREL CÔRP 100V Thru 500V, Up To 35 Amp, N-Channel MOSFET With Low Power Gate Drive Circuitry FEATURES • Isolated Hermetic Package

Contextual Info: TOSHIBA SSM3K04FS TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K04FS HIGH SPEED SWITCH APPLICATIONS Unit in mm With Built-in Gate-Souree Resistor : Rq § = 1 MO Typ. 2.5 V Gate Drive : V^h = 0.7—1.3 V Low Gate Threshold Voltage Small Package

Contextual Info: TOSHIBA SSM6N04FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM6N04FU Unit in mm HIGH SPEED SWITCH APPLICATIONS With Built-in Gate-Souree Resistor : R@g = 1 M il Typ. 2.5 V Gate Drive Low Gate Threshold Voltage : V ^ = 0.7~1.3V Small Package

marking MOW

Contextual Info: TOSHIBA SSM6N04FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM6N04FU Unit in mm HIGH SPEED SWITCH APPLICATIONS With Built-in Gate-Souree Resistor : Rq § = 1 MO Typ. 2.5 V Gate Drive Low Gate Threshold Voltage : V^h = 0.7~1.3 V Small Package

SSM3K04FS

Contextual Info: SSM3K04FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FS High Speed Switch Applications Unit: mm • With built-in gate-source resistor: RGS = 1 MΩ typ. • 2.5 V gate drive • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package

Contextual Info: TOSHIBA SSM3K04FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K04FU HIGH SPEED SWITCH APPLICATIONS U n it in mm 2.1 ± 0.1 With Built-in Gate-Source Resistor : Rq § = 1 MO Typ. 1.25 ±0.1 2.5 V Gate Drive Low Gate Threshold Voltage E t

Contextual Info: T O SH IB A SSM3K04FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K04FU HIGH SPEED SWITCH APPLICATIONS With Built-in Gate-Source Resistor : Rq § = 1 Mil Typ. 2.5 V Gate Drive Low Gate Threshold Voltage : V^h = 0.7—1.3 V Small Package

SSM6N04FU

Contextual Info: SSM6N04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N04FU High Speed Switch Applications • • • • Unit: mm With built-in gate-source resistor: RGS = 1 MΩ typ. 2.5 V gate drive Low gate threshold voltage: Vth = 0.7~1.3 V Small package

Contextual Info: T O SH IB A SSM3K04FE TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE <;<;M3Kn¿LFF HIGH SPEED SWITCH APPLICATIONS With Built-in Gate-Source Resistor : Rq § = 1 Mil Typ. 2.5 V Gate Drive Low Gate Threshold Voltage : V^h = 0.7—1.3 V Small Package

SSM3K04FE

Contextual Info: SSM3K04FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FE High Speed Switching Applications Unit: mm • With built-in gate-source resistor: RGS = 1 MΩ typ. • 2.5 V gate drive • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package

SSM3K04FS

Contextual Info: SSM3K04FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FS High Speed Switch Applications Unit: mm • With built-in gate-source resistor: RGS = 1 MΩ typ. • 2.5 V gate drive • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package

Contextual Info: PRELIMINARY DATASHEET NO. PD-9.802 International S ] Rectifier IRGPC50UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT • Latch-proof • Simple gate drive • High operating frequency • Switching-loss rating includes

application note gate driver with bootstrap capacitor

Abstract: SNVS349B
Contextual Info: LM5105 LM5105 100V Half Bridge Gate Driver with Programmable Dead-Time Literature Number: SNVS349B LM5105 100V Half Bridge Gate Driver with Programmable DeadTime General Description Features The LM5105 is a high voltage gate driver designed to drive both the high side and low side N –Channel MOSFETs in a

ndp706b

Abstract: PWM power motor driver NDS9945
Contextual Info: LM9061 Power MOSFET Driver with Lossless Protection General Description The LM9061 is a charge-pump device which provides the gate drive to any size external power MOSFET configured as a high side driver or switch. A CMOS logic compatible ON/OFF input controls the output gate drive voltage. In the