GASB Search Results

LED21-TEC-PR

Contextual Info: LED21-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 2.15 µm series are based on heterostructures grown on GaSb substrates. They are developed for using in optical gas sensors and medical diagnostics.

LED23FC-TEC-PR

Contextual Info: LED23FC-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap

LED22

Contextual Info: LED22 TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 2.25 µm series are based on heterostructures grown on GaSb substrates. They are developed for using in optical gas sensors and medical diagnostics. LED22 has a stable ouput power and a lifetime more then 80000 hours.

LED23FC

Contextual Info: LED23FC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap

LED19-PR

Contextual Info: LED19-PR v 2.0 24.11.2014 Description LED19-PR series are fabricated from narrow band-gap GaInAsSb/AlGaAsSb heterostructures lattice matched to GaSb substrate. This Mid-IR LED provides a typical peak wavelength of 1.95 µm and optical power of typ. 1 mW qCW. It comes in TO-18 package, with a parabolic reflector and a without window on request .

LED19FC-TEC

Contextual Info: LED19FC-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap

LED18FC-TEC

Contextual Info: LED18FC-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.85 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap

LED22-TEC

Contextual Info: LED22-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 2.25 µm series are based on heterostructures grown on GaSb substrates. They are developed for using in optical gas sensors and medical diagnostics. LED22-TEC has a stable ouput power and a lifetime more then 80000 hours.

LED20-TEC-PR

Contextual Info: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 2.05 µm Model LED20-TEC-PR 1.1 mW •Light Emitting Diodes LED20-TEC-PR are designed for emitting at a spectral range around 2050 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on GaSb substrates

LED20FC-TEC

Contextual Info: LED20FC-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.02 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap

LED20FC-SMD5

Contextual Info: LED20FC-SMD5 TECHNICAL DATA Mid-Infrared LED, Flip-Chip Design, SMD Light Emitting Diodes with central wavelength 2.02 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid

Contextual Info: LED16FC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.65 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap

LED19FC-PR

Contextual Info: LED19FC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap

LED18FC-TEC-PR

Contextual Info: LED18FC-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.85 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap

LED22FC-PR-WIN

Contextual Info: LED22FC-PR-WIN TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.23 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap

Contextual Info: LED17FC-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.75 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap

Contextual Info: LED23-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.

LED21FC-TEC-PR

Contextual Info: LED21FC-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.15 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap

LED19-TEC

Contextual Info: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 1.95 µm Model LED19-TEC 1.0 mW •Light Emitting Diodes LED19-TEC are designed for emitting at a spectral range around 1950 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on GaSb substrates

LED20FC

Contextual Info: LED20FC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.02 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap

LED23-TEC-PR

Contextual Info: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 2.35 µm Model LED23-TEC-PR 0.8 mW •Light Emitting Diodes LED23-TEC-PR are designed for emitting at a spectral range around 2350 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on GaSb substrates

LED19-SMD5

Contextual Info: LED19-SMD5 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.

Contextual Info: LED17FC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.75 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap

LED18-TEC

Contextual Info: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 1.85 µm Model LED18-TEC 0.9 mW •Light Emitting Diodes LED18-TEC are designed for emitting at a spectral range around 1850 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on GaSb substrates