GAN AMPLIFIER 12GHZ Search Results
GAN AMPLIFIER 12GHZ Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN | |||
MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN | |||
MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN | |||
MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN | |||
MGN1S1208MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-8V GAN |
GAN AMPLIFIER 12GHZ Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MECKULNA1 Ku-Band GaN HEMT Low Noise Amplifier VG1 VD1 VG2 VD2 Main Features VG3 VD3 RFin RFout Product Description MECKULNA1 is a 0.25µm GaN HEMT based Low Noise Amplifier designed by MEC for Ku-Band applications. 0.25µm GaN HEMT Technology 12– 16 GHz full performance Frequency |
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Contextual Info: TGA2598 6 – 12GHz 2W GaN Driver Amplifier Applications • Commercial and military radar Communications Electronic Warfare EW Product Features Functional Block Diagram Frequency Range: 6 – 12GHz PSAT: >33dBm PAE: >31% |
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TGA2598 12GHz 12GHz 33dBm 100mA, TGA2598 TQGaN25) 6-12GHz, 33dBm | |
X-band Gan Hemt
Abstract: GaN amplifier Gan on silicon substrate rf gan amplifier MMIC X-band amplifier x-Band Hemt Amplifier AlGaN/GaN HEMTs Gan on silicon transistor Gan transistor k 1535
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AN-011 AN-011: X-band Gan Hemt GaN amplifier Gan on silicon substrate rf gan amplifier MMIC X-band amplifier x-Band Hemt Amplifier AlGaN/GaN HEMTs Gan on silicon transistor Gan transistor k 1535 | |
GaN amplifier
Abstract: GaN amplifier 100W GaAs HEMTs X band 25W Amplifier Research NPT25100 NPTB00050 high power fet amplifier schematic an-013 nitronex Amplifier Research rf power amplifier schematic broadband impedance transformation
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AN-013 AN-013: NPTB00004 12-Watt NPT25100 MRF6S9125 GaN amplifier GaN amplifier 100W GaAs HEMTs X band 25W Amplifier Research NPTB00050 high power fet amplifier schematic an-013 nitronex Amplifier Research rf power amplifier schematic broadband impedance transformation | |
Contextual Info: TGA2612 6-12 GHz GaN LNA Applications • Commercial and Military Radar Communications Product Features Functional Block Diagram Frequency Range: 6–12GHz NF: < 1.8dB 1.5dB midband P1dB: 20dBm OTOI: 29dBm Small Signal Gain: >22dB |
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TGA2612 12GHz 20dBm 29dBm 100mA, TGA2612 TQGaN25) 12test | |
Contextual Info: GaAs & GaN Build your own solution with UMS FOUNDRY SERVICES UMS has developed a proven family of III-V based processes for high performance low noise and high power MMICs. These processes are extensively used by foundry customers and by UMS to offer MMIC solutions for the Defence, |
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TS16949. | |
MGF4937
Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
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H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1 | |
Contextual Info: MMICs, RFICs, Integrated system solution Microwave & Millimeter wave product Line = VectraWave is a solution provider for integrated electronic in high frequency, microwaves and optoelectronic for telecommunications and |
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30Gbps 30GHz 16X16 12GHz 24X18 40Ghz 43GHz/21 | |
Contextual Info: NBB-302 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Package Style: MPGA, Bowtie, 3x3, Ceramic Features Reliable, Low-Cost HBT Design 12.0dB Gain, +13.7dBm P1dBat2GHz Pin 1 Indicator High P1dB of +14.0dBmat6.0GHz and +11.0dBmat14.0GHz |
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NBB-302 12GHz 0dBmat14 DS120130 | |
Contextual Info: ISO 9001:2008 Certified AMCOM Communications, Inc. Product Brochure April 2015 ISO 9001:2008 Certified Registration # 220501.1Q ISO 9001:2008 Certified Section 1 - AMCOM Communications, Inc. AMCOM was established in December 1996 by a group of microwave engineers experienced in both |
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Contextual Info: NBB-302 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Package Style: MPGA, Bowtie, 3x3, Ceramic Features Reliable, Low-Cost HBT Design 12.0dB Gain, +13.7dBm P1dBat2GHz Pin 1 Indicator High P1dB of +14.0dBmat6.0GHz and +11.0dBmat14.0GHz |
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NBB-302 12GHz 0dBmat14 NBB-302 DS120130 | |
VCC1
Abstract: GaN Amplifier 20GHz
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NDA-320-D NDA-320-D 10GHz 14GHz 15GHz 20GHz VCC1 GaN Amplifier 20GHz | |
MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
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MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30 | |
Contextual Info: NDA-320-D 4 GaInP/GaAs HBT MMIC DISTRIBUTED AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs Military Radio Designs • Linear and Saturated Amplifiers GENERAL PURPOSE |
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NDA-320-D 12GHz NDA-320-D | |
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Contextual Info: NBT-168 0,&52:$9 *D,Q3*D$V ',6&5(7( +%7 '& 72 *+] 7\SLFDO $SSOLFDWLRQV • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier GENERAL PURPOSE AMPLIFIERS 4 3URGXFW 'HVFULSWLRQ The NBT-168 discrete HBT is ideal for low-cost amplifier and oscillator applications up to 12GHz. Low noise figure, |
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NBT-168 NBT-168 12GHz. NBT-168-D) NBT-168) | |
84-1LMI
Abstract: GaN matching 100 watt NBT-168 MMB-330 NBT-168-D NBT-168-T1 GaN Amplifier 12GHz GaN Bias 25 watt 168E BJT IC Vce
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NBT-168 12GHz NBT-168 12GHz. NBT-168-D) NBT-168) 84-1LMI GaN matching 100 watt MMB-330 NBT-168-D NBT-168-T1 GaN Amplifier 12GHz GaN Bias 25 watt 168E BJT IC Vce | |
CGY2108GS
Abstract: D01GH D01MH CGY2191UH/C2 D01PH ED02AH CGY2190UH/C2
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500MHz 160GHz CGY2108GS D01GH D01MH CGY2191UH/C2 D01PH ED02AH CGY2190UH/C2 | |
Contextual Info: NDA-320-D InGaP/GaAs HBT MMIC DISTRIBUTED AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs Military Radio Designs • Linear and Saturated Amplifiers Product Description |
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NDA-320-D NDA-320-D 10GHz 14GHz 15GHz 20GHz | |
Contextual Info: NDA-320-D InGaP/GaAs HBT MMIC DISTRIBUTED AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs Military Radio Designs • Linear and Saturated Amplifiers Product Description |
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NDA-320-D 12GHz NDA-320-D | |
Contextual Info: NDA-322 4 GaInP/GaAs HBT MMIC DISTRIBUTED AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs Military Radio Designs • Linear and Saturated Amplifiers Product Description |
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NDA-322 12GHz NDA-322 NDA-320-D | |
Contextual Info: NBB-300 4 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers |
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NBB-300 12GHz NBB-300 flexibilit-40 | |
Contextual Info: NBB-302 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers LMDS/UNII/VSAT/WLAN/Cellular/DWDM |
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NBB-302 NBB-302 NBB-300-D) 10GHz 14GHz 15GHz 20GHz | |
138dbm
Abstract: NBB-300
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NBB-300 NBB-300 NBB-300-D) 138dbm | |
NDA-322
Abstract: 84-1LMI NDA-320-D 100ghz MMIC POWER AMPLIFIER hemt
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NDA-322 12GHz NDA-322 NDA-320-D 84-1LMI 100ghz MMIC POWER AMPLIFIER hemt |