GAL 16 V 8 D DIP Search Results

FEP321

Abstract: ABB Fep311 FEP311 FET321 FEP300 FEP321 flow meter FEP315 FET301 FET325 ABB FEP315
Contextual Info: Data Sheet DS/FEP300-EN Electromagnetic Flowmeter ProcessMaster FEP300 Intuitive operation - Softkey-based functionality - “Easy Set-up” function Non-contact buttons - Parameterization of the device without the need to open the housing Diagnostics for real-life situations

lm555 timer circuit

Abstract: g22v10 GAL G22V10 CON40A LM555 video pattern generator 386SX DK65550 GAL22V10 weitek
Contextual Info: 65550/554 Suggested ZV Port Manufacturing Test via the PCMCIA Socket Application Note Revision 1.1 June 1996 P R E L I M I N A R Y  Copyright Notice Copyright 1996 Chips and Technologies, Inc. ALL RIGHTS RESERVED. This manual is copyrighted by Chips and Technologies, Inc. You may not reproduce, transmit,

FEP321

Abstract: FEP521 FEP511 FET321 2501 optocoupler FET521 B1647 FEP500 F304L sensor tv 1453
Contextual Info: Data Sheet DS/FEP500-EN Electromagnetic Flowmeter ProcessMaster FEP500 Intuitive operation - Softkey-based functionality - “Easy Set-up” function Diagnostics for real-life situations - Status messages in accordance with NAMUR - Help texts in the display

gal programming algorithm

Abstract: XOR en TTL gal9 opal GAL20V8Q
Contextual Info: ^ National ÉM Semiconductor NATL SEMICOND M EM ORY NSC3 February 1992 r -v < -/? -0 7 GAL20V8QS 24-Pin Generic Array Logic Family General Description Features The EECMOS GAL QS devices combine a high per­ formance CMOS process with electrically erasable floating

Contextual Info: GAL16V8A-10, -12, -15, -20 National Semiconductor GAL16V8A-10, -12, -15, -20 Generic Array Logic General Description Features The NSC E2CMOS GAL device combines a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology

gal 16v8 programming specification

Abstract: gal 16v8 programming algorithm National SEMICONDUCTOR GAL16V8 gal16v8 programming algorithm gal16v8 national GAL16V8-25 GAL16V8-20 application GAL 16l8 gal programming gal16v8
Contextual Info: GAL16V8/A 03 National Semiconductor GAL16V8/A 20-Pin Generic Array Logic Family General Description Features The EECMOS GAL 16V8/A devices are fabricated using electrically erasable floating gate technology. This program­ mable memory technology applied to array logic provides

gal programming algorithm

Abstract: gal programming gal programming specification 6AL16V8A application GAL 16l8 16L8* GAL 6AL16 16V8A gal16vba GAL 16 v 8 D DIP
Contextual Info: GAL16V8A-10, -12, -15, -20 mH 5g | National Semiconductor GAL16V8A-10, -12, -15, -20 Generic Array Logic General Description Features The NSC E2CMOStm GAL device combines a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology

gal 16v8 programming algorithm

Abstract: GAL16V8 application notes gal16v8 national National SEMICONDUCTOR GAL16V8 gal 16v8 programming specification GAL16V8-25 25L90 gal programming algorithm GAL16V8-25L 16L8* GAL
Contextual Info: GAL16V8 National iCA Semiconductor GAL16V8 Generic Array Logic General Description Features The NSC E2CMOS GAL device combines a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology

gal programming specification

Abstract: GAL Gate Array Logic GAL20R10 GAL20RA10 gal programming algorithm 20ra10 gal programmer
Contextual Info: GAL20RA10-15, -20, -25 PRELIMINARY National Semiconductor GAL20RA10-15, -20, -25 Generic Array Logic General Description Features The NSC E2CMOStm GAL device combines a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology

Contextual Info: se MIKROn Absolute Maximum Ratings Symbol VcES VcGR lc ICM Values Conditions ' Units Rge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode 8 Tcase = 25/80 °C If = - lc Tcase = 25/80 C . tp = 1 ms

S16R6

Abstract: TDA 2088 GAL16V8Q GAL16V80
Contextual Info: 4 TE National Semiconductor D NSC 3 b S D l i a t i DDbSEl fl T li NATL SEMICOND MEMORY) February1992 T -V * -/? -0 7 GAL16V8QS 20-Pin Generic Array Logic Family General Description Features The EECMOS GAL QS devices combine a high per­ formance CMOS process with electrically erasable floating

GAL16V8QS

Abstract: 16L8* GAL application GAL 16l8 gal programming specification gal16v8qs25 gal programming algorithm GAL16v8 algorithm
Contextual Info: GAL16V8QS £3 National ÆM Semiconductor GAL16V8QS 20-Pin Generic Array Logic Family General Description Features The EECMOS GAL QS devices combine a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology

gal22v10 application

Abstract: GAL22V10 PAL22V10 QAL22V10-30L
Contextual Info: PRELIMINARY GAL22V10 yw \ National mjM Semiconductor GAL22V10, -15, -20, -25, -30 Generic Array Logic General Description Features The NSC E2CMOStm GAL devices combine a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology

gal programming algorithm

Abstract: 16L6 18L4 20L8 GAL20V8 GAL20V8A GAL20V8A-10 GAL20Vb
Contextual Info: GAL20V8A-10, -12, -15, -20 Generic Array Logic General Description Features The NSC E2CMOS GAL device combines a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology applied to array logic provides designers with reconfigurable

QAL22V10-30L

Abstract: PAL22V10 GAL22V10 National gal programming algorithm LY1040 GAL22V10 GAL Gate Array Logic
Contextual Info: GAL22V10 NATL SEMICOND LS0112b b3E D MEMORY DGb7b45 «NSCB National mm Semiconductor GAL22V10, -15, -20, -25, -30 Generic Array Logic General Description Features The NSC E2CMOS GAL devices combine a high per­ formance CMOS process with electrically erasable floating

Contextual Info: m GAL22V10, -15, -20, -25, -30 Generic Array Logic General Description Features The NSC E2CMOStm g a l devices combine a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology applied to array logic provides designers with reconfigurable

siemens igbt BSM 150 gb 100 d

Abstract: BSM100GB120D siemens igbt
Contextual Info: bDE D • 023Sb05 OOMSÔÛO 122 ■ S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF ' 7 <23 o ’^ ” BSM 100 GB 120 D BSM 100 GAL 120 D IGBT Module Preliminary Data VCE = 1200 V I c = 2 x 1 3 5 A at r c = 25 'C / c = 2 x 1 0 0 A at r c = 80 C • • • • •

GAL Gate Array Logic

Abstract: gal22v10 application note gal22v10 application gal22v10
Contextual Info: GAL22V10 EH National m M Semiconductor GAL22V10, -15, -20, -25, -30 Generic Array Logic General Description Features The NSC E2CMOS GAL devices combine a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology

IGBT Module BSM150GB120D

Abstract: siemens igbt BSM 150 gb 100 d siemens igbt BSM 150 Gb 160 d BSM 15 GB GAL 700 BSM150GB120D siemens igbt BSM 100 gb siemens igbt BSM 50 gb 100 d aa-es siemens
Contextual Info: bOE D • flEBSLGS OOMSâ^b S^T « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF ^ IGBT Module Preliminary Data 3 - 0 9 BSM150GB120D BSM 150 GAL 120 D V CE = 1200 V I c = 2 X 200 A at Tc = 25 C I c = 2 x 1 5 0 A at r c = 8 0 C • • • • • Power m odule

26LS232

Abstract: 8506402QA 8768401MQA 80C31-16 8200802JA 9078101MCA 8856602QA 82S105 59628856601XA 7802001EA
Contextual Info: Philips Semiconductors Military and Special Products Data Handbook Product Listing by Basic Part Number Basic Part Number Military Drawing 5962- Device Description Package Description Basic Part Number Military Drawing 5962- ABT22V10A 91760Ö7MLX BICMOS GAL

GAL20Vb

Abstract: GAL20V8-25L GAL20V8 gal20v8-25 GAL programming algorithm 14H6 GAL20VB-25Q pal 16P6 25L90 gal20v8 application
Contextual Info: GAL20V8 CTJ National Semiconductor GAL20V8 Generic Array Logic General Description The NSC E2CMOS GAL device combines a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology applied to array logic provides designers with reconfigurable

Semikron SKM 173D

Abstract: SK 200 GAR 125 SKM200GB173 B679
Contextual Info: s e m ik r o n Absolute Maximum Ratings S ym bol VcES VcGR lc ICM V a lu e s C o nd itions 1 U nits 1700 1700 2 2 0 /1 5 0 440 / 300 ±20 1250 - 4 0 . . .+150 125 4000 Class F 55/150/56 Rqe = 20 k ii Tease = 25/80 °C Tease ~ 25/80 °C; tp = 1 ms Vges Ptoi

FEH511

Abstract: FEP321 FEH521 FET501 2501 optocoupler FET521 3KXF081100L0001 FET321 JIS B2210 DIN 32676 iso 2037
Contextual Info: Data Sheet DS/FEH500-EN Electromagnetic Flowmeter HygienicMaster FEH500 Intuitive operation - Softkey-based functionality - “Easy Set-up” function Diagnostics for real-life situations - Status messages in accordance with NAMUR - Help texts in the display

Contextual Info: ET INC. Industrial PEEL 18CV8I -10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features Industrial Grade Specifications — V cc = 4.5V to 5.5V, TA = -40°C to +85°C — Reprogrammable 20-pin DIP, PLCC and SOIC packages Architectural Flexibility