GAL 16 V 8 D Search Results

Contextual Info: SN74LV8154 DUAL 16ĆBIT BINARY COUNTERS WITH 3ĆSTATE OUTPUT REGISTERS SCLS589 − AUGUST 2004 D Can Be Used as Two 16-Bit Counters or a D D D D D D D N OR PW PACKAGE TOP VIEW Single 32-Bit Counter 2-V to 5.5-V VCC Operation Max tpd of 25 ns at 5 V (RCLK to Y)

gbu 10k

Contextual Info: SN74LV8154 DUAL 16ĆBIT BINARY COUNTERS WITH 3ĆSTATE OUTPUT REGISTERS SCLS589 − AUGUST 2004 D Can Be Used as Two 16-Bit Counters or a D D D D D D D N OR PW PACKAGE TOP VIEW Single 32-Bit Counter 2-V to 5.5-V VCC Operation Max tpd of 25 ns at 5 V (RCLK to Y)

Contextual Info: SN74LV8154 DUAL 16ĆBIT BINARY COUNTERS WITH 3ĆSTATE OUTPUT REGISTERS SCLS589 − AUGUST 2004 D Can Be Used as Two 16-Bit Counters or a D D D D D D D N OR PW PACKAGE TOP VIEW Single 32-Bit Counter 2-V to 5.5-V VCC Operation Max tpd of 25 ns at 5 V (RCLK to Y)

Contextual Info: SN74LV8154 DUAL 16ĆBIT BINARY COUNTERS WITH 3ĆSTATE OUTPUT REGISTERS SCLS589 − AUGUST 2004 D Can Be Used as Two 16-Bit Counters or a D D D D D D D N OR PW PACKAGE TOP VIEW Single 32-Bit Counter 2-V to 5.5-V VCC Operation Max tpd of 25 ns at 5 V (RCLK to Y)

Contextual Info: GAL16V8A-10, -12, -15, -20 National Semiconductor GAL16V8A-10, -12, -15, -20 Generic Array Logic General Description Features The NSC E2CMOS GAL device combines a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology

Contextual Info: GAL20RA10-15, -20, -25 PRELIMINARY National Semiconductor GAL20RA10-15, -20, -25 Generic Array Logic General Description Features The NSC E2CMOS GAL device combines a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology

A115-A

Abstract: C101 SN74LV8154 SN74LV8154MPWREP SN74LV8154-EP
Contextual Info: SN74LV8154ĆEP DUAL 16 BIT BINARY COUNTER WITH 3ĆSTATE OUTPUT REGISTERS SCLS704A − JULY 2006 − REVISED SEPTEMBER 2007 D Controlled Baseline D D D D D D D D D D D D ESD Protection Exceeds JESD 22 − One Assembly Site − One Test Site − One Fabrication Site

gal 16v8 programming specification

Abstract: gal 16v8 programming algorithm National SEMICONDUCTOR GAL16V8 gal16v8 programming algorithm gal16v8 national GAL16V8-25 GAL16V8-20 application GAL 16l8 gal programming gal16v8
Contextual Info: GAL16V8/A 03 National Semiconductor GAL16V8/A 20-Pin Generic Array Logic Family General Description Features The EECMOS GAL 16V8/A devices are fabricated using electrically erasable floating gate technology. This program­ mable memory technology applied to array logic provides

Contextual Info: SN74LV8154 DUAL 16ĆBIT BINARY COUNTERS WITH 3ĆSTATE OUTPUT REGISTERS SCLS589 − AUGUST 2004 D Can Be Used as Two 16-Bit Counters or a D D D D D D D N OR PW PACKAGE TOP VIEW Single 32-Bit Counter 2-V to 5.5-V VCC Operation Max tpd of 25 ns at 5 V (RCLK to Y)

Contextual Info: SN74LV8154 DUAL 16ĆBIT BINARY COUNTERS WITH 3ĆSTATE OUTPUT REGISTERS SCLS589 − AUGUST 2004 N OR PW PACKAGE TOP VIEW D Can Be Used as Two 16-Bit Counters or a D D D D D D D Single 32-Bit Counter 2-V to 5.5-V VCC Operation Max tpd of 25 ns at 5 V (RCLK to Y)

skm 152 ga 123

Abstract: semikron skm 152 ga 123 semikron skm 152 ga skm 152 ga SKM 300 CIRCUIT SKM 300 GA 102 D 1502C SKM 200 GB 102 D SKM 200 CIRCUIT skm 22 gal 123
Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC Tcase = 25/80 °C

GAL16VB

Abstract: National SEMICONDUCTOR GAL16V8 GAL16V8 application notes GAL16v8 algorithm
Contextual Info: GAL16V8 National Semiconductor GAL16V8 Generic Array Logic General Description Features The NSC E2CMOS GAL device combines a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology applied to array logic provides designers with reconfigurable

Contextual Info: SN74LV8154ĆEP DUAL 16 BIT BINARY COUNTER WITH 3ĆSTATE OUTPUT REGISTERS SCLS704A − JULY 2006 − REVISED SEPTEMBER 2007 D ESD Protection Exceeds JESD 22 D Controlled Baseline D D D D D D D D D D D − One Assembly Site − One Test Site − One Fabrication Site

16v8

Abstract: 18V8 EEL22 EP330 16P2 16R4 22p10 TM 1618 16r8 "EEL-22"
Contextual Info: 6. T a b le o f C o m p a t ib ilit y w it h PLD s b y O th e r M a k e rs T o replace P L D s from other m a k e rs w ith T o sh ib a P L D s, refer to the follow ing tab le. The tab le lists P L D s which are lo gically com patible, in clu d in g e xtern al pin specification s, with

Contextual Info: se MIKROn Absolute Maximum Ratings Symbol VcES VcGR lc ICM Values Conditions ' Units Rge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode 8 Tcase = 25/80 °C If = - lc Tcase = 25/80 C . tp = 1 ms

SKM 75 GAL 123 IGBT

Abstract: semikron SKD 75 gal Semitrans M SKD 100 GAL B6U 380 Semitrans M SKD brake chopper b6u 500 semikron semikron skd 75 semikron skd skd75
Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes 9) IF IFM= – ICM IFSM I2t Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT/D1/D8, Tcase=25 °C AC, 1 min. DIN 40 040

PAL 008 pioneer

Abstract: B0017 5962-9476101MXC GAL22V10 GAL22V10D lattice 2032 GAL16V8C-7LD
Contextual Info: Product Selector Guide High Performance In-System Programmable Logic Introduction 3.3V ispLSI 2000V Family Complete ISPTM Products Lattice’s revolutionary ISP products give customers the ability to program and reprogram logic devices right on the printed

GAL16V8QS-15LNC

Contextual Info: November 1993 Semiconductor GAL16V8QS-10L, -15L 20-Pin 0.8ju, EECMOS PLDs General Description Features The EECMOS GAL16V8QS devices are fabricated using National’s CS80BEV 0.8/j. Electrically Erasable CMOS pro­ cess. This advanced process makes National’s

GAL20Vb

Abstract: GAL20V8QS-15L
Contextual Info: GAL20V8QS 03 National mm Semiconductor GAL20V8QS 24-Pin Generic Array Logic Family General Description Features The EECMOS GAL QS tm devices combine a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology

GAL programmer schematic

Abstract: elevator circuit diagram logic gates 3 floor elevator schematic GAL16v8 programmer schematic logic for elevator control circuit ELEVATOR LOGIC CONTROL GAL Development Tools P16V8AS GAL16V8 application notes gal programming timing chart
Contextual Info: Using GALi Development Tools Here we provide the basis for getting started with GAL devices. As you proceed with the development of your applications, call us — we’d like to hear how it's going. GAL Hardware and Software Tools Lattice Semiconductor specializes in the design and

SKM 400 gal 124 IGBT

Abstract: skm 40 gb 124 d the calculation of the power dissipation for the igbt and the inverse diode in circuits semikron skm 300 gar 124 IGBT inverter calculation FOR A UPS SKM 150 GB 124 D
Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 570 / 400

Contextual Info: m GAL22V10, -15, -20, -25, -30 Generic Array Logic General Description Features The NSC E2CMOStm g a l devices combine a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology applied to array logic provides designers with reconfigurable

batron 21605

Abstract: Batron bt 21605 KC-505 BT 21605 81C91 Batron LCD 21605 phytec KC-167 kitCON-167 DB9-connector BT21605
Contextual Info: kitCON-CAN Hardware-Manual Edition August 1999 A product of a PHYTEC Technology Holding company kitCON-CAN In this manual are descriptions for copyrighted products which are not explicitly indicated as such. The absence of the trademark  symbol does not infer that a

diode D7

Abstract: SKM40GD123D b6u semikron b6u 500 semikron datasheet gal 120 05 td DIODE D16 diode d8 3
Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes 9) IF IFM= – ICM IFSM I2t Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT/D1/D8,Tcase=25°C AC, 1 min. DIN 40 040