GAAS MMIC ASSEMBLY AND HANDLING GUIDELINES Search Results

KCW-10

Abstract: AuSn solder GaAs MMIC ESD, Die Attach and Bonding Guidelines thermocompression bonder AuSn a/KCW-10
Contextual Info: H GaAs MMIC Assembly and Handling Guidelines Application Note 999 Mechanical Considerations Because of the small size of the devices, handling should always be performed with the aid of a microscope. There are several methods for picking up, transferring and die

84-1LMI epoxy adhesive

Abstract: 84-1LMI thermocompression Die Attach and Bonding Guidelines copper bond wire PEDESTAL FOR MMIC BRASS
Contextual Info: GaAs MMIC ESD, Die Attach and Bonding Guidelines Application Note # 54 - Rev. A May 2000 1.0 ESD Considerations A GaAs IC can be destroyed electrically by a static or other discharge through the device. It must therefore be handled so these effects cannot occur.

Contextual Info: v01.0801 APPLICATION NOTES HANDLING GUIDELINES FOR ESD PROTECTION OF GaAs MMICs Handling Guidelines for ESD Protection of GaAs MMICs All electrical components are sensitive in some degree to Electrostatic Discharge ESD , and GaAs MMICs are no exception. Many digital semiconductors have some level of protection circuitry designed into the input and output pins.

Contextual Info: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK Handling Guidelines for ESD Protection of GaAs MMICs General Application Note Hittite Microwave Corporation

AN-S002

Abstract: AN-S013 5091 AN-S001 MGA-64135 GaAS MMIC Assembly and Handling Guidelines MSA1104 msa-0520 POWER AMPLIFIERS CIRCUIT DIAGRAMS TRANSIMPEDANCE mmic
Contextual Info: Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest HewlettPackard authorized distributor or representative. Technical information is also available on the WWW at: www.hp.com/go/rf

AN-S002

Abstract: 5091-9054E AN-S014 AN-S011
Contextual Info: f ï J l HEW LETT '1 1 PACKARD “KM Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest HewlettPackard authorized distributor or representative. Technical information is also available on the WWW at:

body contact FET soi RF switch

Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines TGA8014-SCC GAAS FET CROSS REFERENCE TGA8021 GAAS FET rf switch CROSS REFERENCE cte table for epoxy adhesive and substrate electric blanket microwave transducer MMIC X-band amplifier
Contextual Info: Gallium Arsenide Products Designers’ Information TriQuint Semiconductor Texas Phone: 972 994-8465 Fax: (972)994-8504 http://www.triquint.com IMPORTANT NOTICE TriQuint Semiconductor (TQS) reserves the right to make changes to or to discontinue any semiconductor product or service identified in this publication without notice. TQS advises

GaAS MMIC Assembly and Handling Guidelines

Abstract: hp 502 ghz power
Contextual Info: Whpl W LETT mL'HM HPAE CK ARD GaAs MMIC SPDT Switch Technical Data HMMC-2006 DC - 6 GHz Features • Broad Bandwidth: DC - 6 GHz • Low Insertion Loss: 1 dB • High Isolation: 60 dB at 300 MHz 35 dB at 6 GHz • High PidB' 23 dBm at 50 MHz >27 dBm at 6 GHz

Die Attach and Bonding Guidelines

Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines long range gold detector circuit diagram agilent HMMC
Contextual Info: Agilent HMMC-5033 17.7-32 GHz Power Amplifier Data Sheet Features 2.74 x 1.31 mm 108 × 51.6 mils ±10 µm (±0.4 mils) 127 ± 15 µm (5.0 ± 0.6 mils) Chip Size: Chip Size Tolerance: Chip Thickness: Description The HMMC-5033 is a MMIC power amplifier designed for use in

ablebond 84-1 LMI

Abstract: ABLEBONd 84-1 A004R AMMC-6222 AMMC-6222-W10
Contextual Info: Products > RF for Mobile, WLAN, mmW > mmW & microWave Devices > Amplifiers > AMMC-6222 AMMC-6222 7-21GHz GaAs High Linearity Low Noise Amplifier Description Avago Technologies AMMC-6222 is an easy-to-use broadband, high gain, high linearity Low Noise Amplifier that operates from 7 GHz to 21GHz.

HP MMIC INA

Abstract: mmic distributed amplifier INA-10386 mps 0736 mmic ina MSA-0404 low noise amplifier ghz amplifier TRANSISTOR 12 GHZ MSA-0520 gaas Low Noise Amplifier
Contextual Info: HP RFIC and MMIC Amplifiers Field Values 20-Nov-97 DocPDF DocName Title Subject Author Keywords pdf_docs\amps\00_FRON Hewlett-Packard A Leader in T\I_III.PDF Components Hewlett-Packard A Leader in Components pdf_docs\amps\00_FRON Alphanumeric Index T\VII_XII.PDF

ultrasonic probe ge

Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines GaAs FET chip ultrasonic bond AN-1001 Ultrasonic bubble kulicke Soffa nec microwave
Contextual Info: California Eastern Laboratories AN-1001 APPLICATION NOTE RECOMMENDED HANDLING PROCEDURES FOR MICROWAVE TRANSISTOR AND MMIC CHIPS INTRODUCTION This document is provided to inform users of some of the handling precautions necessary and the assembly processes

Contextual Info: blE T> m HEWLETT-PACKARD/ CMPNTS 4447564 DDlOlflS 4Tb • H P A Whol H EW L E T T 1J' EM PA C K A R D GaAs MMIC SPDT Switch Technical Data HMMC-2006 DC - 6 GHz Features • Broad Bandwidth: DC - 6 GHz • Low Insertion Loss: 1 dB • High Isolation: 60 dB at 300 MHz

HMMC-2027

Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines Die Attach and Bonding Guidelines
Contextual Info: Agilent HMMC-2027 DC– 26.5 GHz SPDT GaAs MMIC Switch Data Sheet Features • Outputs terminated in 50Ω when off • Frequency range: DC– 26.5 GHz • Insertion loss: 2.5 dB @ 26.5 GHz • Isolation: >70 dB @ 45 MHz >30 dB @ 26.5 GHz • Return loss:

HMMC-2006

Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines Die Attach and Bonding Guidelines
Contextual Info: Agilent HMMC-2006 DC–6 GHz Unterminated SPDT Switch Data Sheet SEL1 Features • Frequency range: DC– 6 GHz SEL2 • Insertion loss: <1dB @ 6 GHz RF OUT2 RF OUT1 • Isolation: >70 dB @ 45 MHz >35 dB @ 6 GHz • Return loss: >12 dB Both input & output

1gg6

Contextual Info: Agilent HMMC-5032 17.7–32 GHz Amplifier 1GG6-8009 Data Sheet Features • • • • • 22 dBm output P –1 dB 8 dB gain 50 Ω input/output matching Small size Bias: 4.5 volts, 250 mA Chip size: Chip size tolerance: Chip thickness: Pad dimensions: 1370 x 770 µm (53.3 x 30.0 mils)

MMIC Amplifier A08

Contextual Info: Agilent HMMC-5032 17.7–32 GHz Amplifier 1GG6-8009 Data Sheet Features • • • • • 22 dBm output P –1 dB 8 dB gain 50 Ω input/output matching Small size Bias: 4.5 volts, 250 mA Chip size: Chip size tolerance: Chip thickness: Pad dimensions: 1370 x 770 µm (53.3 x 30.0 mils)

Contextual Info: Avago HMMC-5021 2–22 GHz , HMMC-5026 (2–26.5 GHz) GaAs MMIC Traveling Wave Amplifiers Data Sheet Chip Size: 2980 x 770 µm (117.3 x 30.3 mils) Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: 127 ± 15 µm (5.0 ± 0.6 mils) Pad Dimensions: 75 x 75µm (2.95 x 2.95 mils), or larger

27S12

Contextual Info: Agilent HMMC-5021 2-22 GHz HMMC-5022 (2-22 GHz) and HMMC-5026 (2-26.5 GHz) 2-26.5 GHz GaAs MMIC Traveling Wave Amplifier Features Data Sheet Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: 2980 x 770 µm (117.3 × 30.3 mils) ±10 µm (±0.4 mils)

Contextual Info: Avago HMMC-5032 17.7 – 32 GHz Amplifier Data Sheet Chip Size: 1.4 x 0.78 mm 55.1 x 30.7 mils Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: 127 ± 15 µm (5.0 ± 0.6 mils) Description The HMMC-5032 is a MMIC power amplifier designed for use in wireless transmitters that operate within

Traveling Wave Amplifier

Contextual Info: HMMC-5021 2–22 GHz , HMMC-5026 (2–26.5 GHz) GaAs MMIC Traveling Wave Amplifiers Data Sheet Chip Size: 2980 x 770 m (117.3 x 30.3 mils) Chip Size Tolerance: ±10 m (±0.4 mils) Chip Thickness: 127 ± 15 m (5.0 ± 0.6 mils) Pad Dimensions: 75 x 75m (2.95 x 2.95 mils), or larger

Contextual Info: HMMC-2027 DC– 26.5 GHz SPDT GaAs MMIC Switch Data Sheet Description The HMMC-2027 is a GaAs monolithic microwave integrated circuit MMIC designed for low insertion loss and high isolation from DC to 26.5 GHz. It is intended for use as a general-purpose, single-pole,

5038

Contextual Info: Avago HMMC-5038 38 GHz LNA Data Sheet Chip Size: 1630 x 760 µm 64.2 x 29.9 mils Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: 127 ± 15 µm (5.0 ± 0.6 mils) Pad Dimensions: 80 x 80 µm (3.1 x 3.1 mils) Description The HMMC-5038 MMIC is a high-gain low-noise

45580

Abstract: 1gg6-8002 4433 fet tca 761 1gg6 8002 amplifier HMMC-5618 GaAs MMIC ESD, Die Attach and Bonding Guidelines agilent HMMC
Contextual Info: Agilent HMMC-5617 6–18 GHz Medium Power Amplifier 1GG6-8002 Data Sheet Features • High efficiency: 11% @ P–1 dB typical • Output power, P–1 dB: 18 dBm typical • High gain: 14 dB typical • Flat gain response: ±0.5 dB typical • Low input/output VSWR: