GAAS MESFET ITT Search Results

Contextual Info: 3.5V 3.3W RF Power Amplifier 1C for GSM ITT2110AH / ITT2111 AH / ITT2112AH PRELIMINARY DATA SHEET General Description The ITT211X family of GaAs MESFET power amplifiers is designed for Class IV GSM cellular phones. With 3.3W output power, these parts are suitable for dual

ITT2110AH

Abstract: ITT2111AH ITT2112AH ITT211X ITTT2112AH
Contextual Info: 3.5V 3.3W RF Power Amplifier IC for GSM ITT2110AH / ITT2111AH / ITT2112AH PRELIMINARY DATA SHEET General Description The ITT211X family of GaAs MESFET power amplifiers is designed for Class IV GSM cellular phones. With 3.3W output power, these parts are suitable for dual

Contextual Info: 3.5V 3.3W RF Power Amplifier IC for GSM ITT2110AH / ITT2111AH / ITT2112AH PRELIMINARY DATA SHEET General Description The ITT211X family of GaAs MESFET power amplifiers is designed for Class IV GSM cellular phones. With 3.3W output power, these parts are suitable for dual

200w computer power supply Circuit diagram

Abstract: JRC 2355 FMM4023KE QFP44
Contextual Info: FMM4023KE 1.0625Gbps Port Bypass Circuit KE DESCRIPTION The FMM4023 is a quad port bypass circuit designed with 0.5µm GaAs MESFET technology for 1.0625Gbps Fibre Channel applications. Small Computer Systems Interface SCSI is the common interface medium for

Contextual Info: 2W GaAs Power Amplifier 4.5 - 7.1 GHz ITT6401FM / [ FEATURES r> \ j Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical 50 £2 Input/Output Impedance Self-Aligned MSAG MESFET Process

Contextual Info: PRELIMINARY DATA SHEET 3W, L/S-BAND MEDIUM POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES NE6500379A Units in mm LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A HIGH OUTPUT POWER: +35 dBm TYP HIGH LINEAR GAIN: 10 dB TYP HIGH POWER ADDED EFFICIENCY: 50% TYP @

nec 0882

Abstract: GRM40X7R104K025BL nec ic 8582 nec d 882 p 100A470CP150X tajb475*010r NE6500379A NE6500379A-T1 GRM40-X7R104K025BL TF-100637
Contextual Info: 3W, L/S-BAND MEDIUM POWER GaAs MESFET NE6500379A OUTLINE DIMENSIONS FEATURES Units in mm • LOW C OST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35 dBm TYP • HIGH LINEAR GAIN: 10 dB TYP • HIGH POWER ADDED EFFICIENCY: 50% TYP @

Contextual Info: PRELIMINARY DATA SHEET 3W, L/S-BAND MEDIUM POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES NE6500379A Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35 dBm TYP • HIGH LINEAR GAIN: 10 dB TYP • HIGH POWER ADDED EFFICIENCY: 50% TYP @

gaas fet T79

Contextual Info: PRELIMINARY DATA SHEET S-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS NEZ3436-30E Units in mm • HIGH OUTPUT POWER: 30 W PACKAGE OUTLINE T-79 • LOW DISTORTION: -45 dBc IMs (@33 dBm SCL) (Verified by a W afer Qual Test) • HIGH LINEAR GAIN: 10 OdB

TRANSISTOR BC 814

Abstract: TRANSISTOR "BC 258" transistor BF 257 ci 4580 MARKING CFK CFk10 BC 251 transistor TRANSISTOR BC 256 Telefunken u 257
Contextual Info: . TELEFUNKEN ELECTRONIC file D ^•3 m W I M M electronic Creative Technologies ■ a^BOG^b 00053^2 5 /~ZS~ CFK10 N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration; In wireless telephone, broadcast sets, cabel TV and equipments with

NEC Ga FET marking A

Abstract: NE25139T1U74 NE25139U NE25139T1U71
Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER QPS LOW CRSS: 0.02 pF TYP M — /; { ' // i ! 1 V f 1 HIGH GPS: 20 dB (TYP) AT 900 MHz LOW NF: 1.1 dB TYP AT 900 MHz

Contextual Info: PRELIMINARY DATA SHEET 50W L-BAND PUSH-PULL POWER GaAs MESFET F E A T U R E S _ • HIGH OUTPUT POWER: 50 W TYP • HIGH DRAIN EFFICIENCY: 52 % TYP @ V d s = 10 V, Id = 2 A, f = 1.96 GHz • HIGH LINEAR GAIN: 10.5 dB TYP • PUSH-PULL CONFIGURATION

sumitomo crm epoxy 1061

Abstract: crm-1061 sumitomo crm epoxy sumitomo crm 1061 sumitomo crm specification L444 NLG2131 AS21 sumitomo epoxy crm CRM1061
Contextual Info: NEL MARCH 2 7 , 1995 NLG2131 ULTRA-WIDEBAND AMPLIFIER The NLG2131 is a GaAs MESFET IC that performs signal amplification over the wide frequency range extending from lOOKHz to 8GHz. This IC is applicable to 10 Gb/s optical fiber communication sy stem s. The NLG2131 is fabricated using the 0.15 ¿¿m gate length A-SAINT Advanced Self-A ligned

15 GHz high power amplifier

Contextual Info: 8W GaAs Power Amplifier 6.0 – 7.6 GHz ITT8402FM ADVANCED INFORMATION FEATURES • • • • • • • High Output Power: 10 Watts (6.5-7.5 GHz) High Linear Power (P1dB): 36.5 dBm typical High Power Added Efficiency: 25% typical at P1dB High Linear Gain: 20 dB typical

Contextual Info: 8W GaAs Power Amplifier 6.0 – 7.6 GHz ITT8402 ADVANCED INFORMATION FEATURES • • • • • • • High Output Power: 10 Watts (6.5-7.5 GHz) High Linear Power (P1dB): 36.5 dBm typical High Power Added Efficiency: 25% typical at P1dB High Linear Gain: 20 dB typical

Contextual Info: 5W GaAs Power Amplifier 6.0 – 9.0 GHz ITT8401FM ADVANCED INFORMATION FEATURES • • • • • • • Broadband Performance High Linear Power (P1dB): 35 dBm typical High Power Added Efficiency: 30% typical at P1dB High Linear Gain: 20 dB typical 50 Ω Input/Output Impedance

GaAsTEK

Contextual Info: 8V 2W GaAs Power Amplifier Die 4.5 - 7.1 GHz ITT6401D FEATURES • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical Efficient performance with 3 to 10 Volt power supply

ITT6401FM

Contextual Info: 2W GaAs Power Amplifier 4.5 - 7.1 GHz ITT6401FM FEATURES • • • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical 50 Ω Input/Output Impedance

2w,GaAs FET

Abstract: ITT6401D
Contextual Info: 8V 2W GaAs Power Amplifier Die 4.5 - 7.1 GHz ITT6401D FEATURES • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical Efficient performance with 3 to 10 Volt power supply

ITT8504D

Contextual Info: 8W Power Amplifier Die 8.0 – 10.5 GHz ITT8504D ADVANCED INFORMATION Features • • • Broadband Performance 35% Typical Power Added Efficiency Self-Aligned MSAG MESFET Process Description Maximum Ratings (T The ITT8504D is a three stage MMIC power

Contextual Info: 12W Single-ended Power Amplifier Die 9.0 – 10.5 GHz ITT338512D ADVANCED INFORMATION Features Three Stage Single-ended High Power Amplifier • • • • Broadband Performance 30% Typical Power Added Efficiency 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process

Contextual Info: 8W Power Amplifier Die 6.5 – 9.0 GHz ITT8405D ADVANCED INFORMATION Features • • • • Broadband Performance 30% Typical Power Added Efficiency 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process Description Maximum Ratings (T The ITT8405D is a three stage MMIC power

ITT8506D

Contextual Info: 8W Power Amplifier Die 9.5 – 10.5 GHz ITT8506D ADVANCED INFORMATION Features • • • 38% Typical Power Added Efficiency 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process Description Maximum Ratings (T The ITT8506D is a three stage MMIC power

32TBD

Abstract: ITT338505D
Contextual Info: 8W Power Amplifier Die 9.5 – 10.5 GHz ADVANCED INFORMATION ITT338505D Features • • • • 32% Typical Power Added Efficiency High Linear Gain: 25 dB typical 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process Description MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)