GAAS MESFET APPLICATION NOTE Search Results

3906 PNP TRANSISTOR

Abstract: irlml6401tr LMK316BJ475KL MAX881 AN-0002 MAX881R RFS1003 RFS1006 AN0002 "Dual PNP Transistor" temperature compensation
Contextual Info: MESFET Amplifier Biasing AN-0002 Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers Summary In order to properly use any amplifier it is necessary to provide the correct operating environment, especially the DC bias. This application note outlines some of the considerations for biasing MESFET

AG101

Contextual Info: The Communications Edge TM Application Note Product Information AG101 Temperature Effects on Reliability The AG101 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s products for more than 15 years. Extensive life testing and field history of our GaAs

wj 75

Abstract: AG101 power amplifier mmic
Contextual Info: The Communications Edge TM Application Note Product Information AM1 Temperature Effects on Reliability The AM1 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s products for more than 15 years. Extensive life testing and field history of our GaAs

AH101

Abstract: wj 75 AG101 AH102 AH11 Characteristic of mesfet mmic ah1
Contextual Info: The Communications Edge TM Application Note Product Information AH101 Temperature Effects on Reliability AH102 Included by Similarity The AH101 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s products for more than 15 years. Extensive life testing and field history of our GaAs

C1027

Abstract: transistor c1027 c1027 transistor C1032 C1007 tp1002 tp1006 TP1003 C1015 transistor C1018
Contextual Info: Application Note RFS1006-AN1 Application Note for RFS1006 Evaluation Board Power Sequencing The RFS1006 power amplifier is a GaAs MESFET PA and requires both a positive drain and negative (gate) voltage. Refer to the board layout diagram indicating voltage, ground and RF

wj 75

Abstract: c 596 AG101 AH11 AH22 AH1-1
Contextual Info: The Communications Edge TM Application Note Product Information AH11 Temperature Effects on Reliability AH22 Included by Similarity The AH11 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s products for more than 15 years. Extensive life testing and field history of our GaAs

RFS1003

Contextual Info: Application Note RFS1003-AN1 Application Note for RFS1003 Evaluation Board Power Sequencing The RFS1003 power amplifier is a GaAs MESFET PA and requires both a positive drain and negative (gate) voltage. Refer to the board layout diagram indicating voltage, ground and RF

WJ Communications, AH1

Abstract: ah1 fet mmic ah1 linear MTBF WJ 59
Contextual Info: The Communications Edge TM Application Note Product Information AH1 Temperature Effects on Reliability AH2 and AH3 Included by Similarity The AH1 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s product for more than 15 years. Extensive life testing and field history of our GaAs products have demonstrated

Contextual Info: APPLICATION NOTE - AKD SERIES DOWNCONVERTERS AKD Series KU-Band GaAs MMIC Downconverters Surface Mount Devices Rev 7 Introduction The AKD Series of downconverters is intended for use in the outdoor LNB portion of DBS (Direct Broadcast Satellite) systems. These MMIC downconverters are fabricated using the ANADIGICS’ 0.5 pm GaAs MESFET

ATF54143.s2p

Abstract: 5988-2336EN transistor C610 5989-0034EN TOKO LL1608-FSR15 ATF-54143 ATF54143 atf54143 pHEMT AN-1222 BCV62C
Contextual Info: A 100 MHz to 500 MHz Low Noise Feedback Amplifier using ATF-54143 Application Note 5057 Introduction In the last few years the leading technology in the area of low noise amplifier design has been gallium arsenide GaAs devices, MESFET and pHEMT. Power amplifiers based on GaAs can achieve high efficiency

NE76038

Abstract: uPC2710 uPC2721 AN1015 UPC2710T UPC2721GR low noise block down converter 1 henry INDUCTOR POWER AMPLIFIER CIRCUIT DIAGRAM 10000 L4* Low noise
Contextual Info: California Eastern Laboratories AN1015 APPLICATION NOTE Low Cost, High Performance Receiver For Wireless Applications INTRODUCTION down converter. The LNA was designed using a discrete low noise GaAs MESFET NE76038 with a matching structure made using discrete components. The NE76038 is fabricated

transistor 1654

Abstract: RFS1003 RF Solutions
Contextual Info: Application Note RFS1003-AN1 Application Note for RFS1003 Evaluation Board Power Sequencing The RFS1003 power amplifier is a GaAs MESFET PA and requires both a positive drain and negative (gate) voltage. Refer to the board layout diagram indicating voltage, ground and RF connectors for proper connection. Proper power up and power

M517

Abstract: MASW6010 54LS04 MESFET
Contextual Info: Application Note MASW6010* GaAs SPDT MMIC Switch Performance and Driver Circuit Techniques MMIC SPDT Switch Design MASW6010 RF The MASW6010 is based on the use of MetalSemiconductor Field Effect Transistors MESFET as the active elements. As shown in the schematic of Figure la,

CLX30

Abstract: CLX30-00 CLX30-05 CLX30-10
Contextual Info: CLX30 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 12.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

CLY35

Abstract: CLY35-00 CLY35-05 CLY35-10
Contextual Info: CLY35 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 4.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

CLY38

Abstract: CLY38-00 CLY38-05 CLY38-10
Contextual Info: CLY38 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 4.2 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

CLY32

Abstract: CLY32-00 CLY32-05 CLY32-10
Contextual Info: CLY32 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 6 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

CLX32

Abstract: CLX32-00 CLX32-05 CLX32-10
Contextual Info: CLX32 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 12.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

CLX27

Abstract: CLX27-00 CLX27-05 CLX27-10
Contextual Info: CLX27 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 15 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

CLY29

Abstract: CLY29-00 CLY29-05 CLY29-10
Contextual Info: CLY29 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 8 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

296K

Abstract: GaAs MESFET amplifier MESFET Application MAX4473 GaAs MesFET Application note MESFET
Contextual Info: AMPLIFIER AND COMPARATOR CIRCUITS Application Note 1800: Dec 04, 2002 Smart IC Maintains Uniform Bias Current For GaAs MESFETs A current sensor that monitors the drain-source current IDS at the source of the MESFET and provides feedback to the gate input overcoming the drawbacks of gateturn-on threshold voltage variations for gallium-arsenide metal-semiconductor fieldeffect transistors, GaAs MESFETs.

CLX34

Abstract: CLX34-00 CLX34-05 CLX34-10
Contextual Info: CLX34 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 10 GHz • Hermetically sealed microwave power package • • • Low thermal resistance for high voltage application

CLY35

Abstract: CLY35-00 CLY35-05 CLY35-10 0244
Contextual Info: CLY35 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 4.5 GHz • Hermetically sealed microwave power package • • Low thermal resistance for high voltage application

0403 817

Abstract: CLY32 CLY32-00 CLY32-05 CLY32-10
Contextual Info: CLY32 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 6 GHz • Hermetically sealed microwave power package • • Low thermal resistance for high voltage application