GAAS FET SOT23 Search Results
GAAS FET SOT23 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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BAV99 |
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Switching Diode, 100 V, 0.215 A, SOT23 | Datasheet | ||
TBAV70 |
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Switching Diode, 80 V, 0.215 A, SOT23 | Datasheet | ||
TBAS16 |
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Switching Diode, 80 V, 0.215 A, SOT23 | Datasheet | ||
TBAW56 |
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Switching Diode, 80 V, 0.215 A, SOT23 | Datasheet | ||
BAV70 |
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Switching Diode, 100 V, 0.215 A, SOT23 | Datasheet |
GAAS FET SOT23 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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104780 0
Abstract: HWL26NPB
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HWL26NPB HWL26NPB 104780 0 | |
Contextual Info: HWL27NPB L-Band GaAs Power FET Autumn 2002 V1 Features Outline Dimensions • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Applications • High Efficiency • 3V Operation 1 Pin 1: Source Pin 2: Gate Pin 3: Drain 2 3 Description The HWL27NPB is a medium Power GaAs FET using |
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HWL27NPB HWL27NPB | |
GaAs fet sot23
Abstract: fet 4901 HWL23NPB PT 3195 FET 3360 7334
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HWL23NPB HWL23NPB GaAs fet sot23 fet 4901 PT 3195 FET 3360 7334 | |
6681 - 250
Abstract: 2686 0112
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HWL27NPB HWL27NPB 200mA 6681 - 250 2686 0112 | |
PH 0852Contextual Info: M L HEXAWAVE HWL26NPB Hexawave, Inc. L-Band Power GaAs FET Description Outline Dimensions The HWL26NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications. |
OCR Scan |
HWL26NPB 110mA PH 0852 | |
Contextual Info: HWL27NPB 1234567849A7BCDEF7 7 Autumn 2002 V1 Features Outline Dimensions • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Applications • High Efficiency • 3V Operation 1 Pin 1: Source Pin 2: Gate Pin 3: Drain 2 3 Description The HWL27NPB is a medium Power GaAs FET using |
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1234567849A7BCDEF7 HWL27NPB HWL27NPB | |
Contextual Info: HWL26NPB 1234567849A7BCDEF7 7 Autumn 2002 V1 Features • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Outline Dimensions Applications • High Efficiency • 3V to 6V Operation 1 Pin 1: Source Pin 2: Gate Pin 3: Drain Description |
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HWL26NPB 1234567849A7BCDEF7 HWL26NPB OT-23) | |
Contextual Info: HWL23NPB 1234567849A7BCDEF7 7 Autumn 2002 V1 Features • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Outline Dimensions Applications • High Efficiency • 3V to 6V Operation 1 Pin 1: Source Pin 2: Gate Pin 3: Drain Description |
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HWL23NPB 1234567849A7BCDEF7 HWL23NPB | |
2SK2396A
Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
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P10100EJ6V0SG00 2SK2396A NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor | |
AF002C4-39LF
Abstract: AF002C1-39 AF002C1-39LF AF002C4-39
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AF002C1-39, AF002C1-39LF, AF002C4-39, AF002C4-39LF: OT-23 J-STD-020 AF002C4-39LF AF002C1-39 AF002C1-39LF AF002C4-39 | |
RF mixer L-Band
Abstract: T4 3570 KGF1531P t4 and 3570 9746 using 7910 im3 GC510 Z0100 3570 1321
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ODRKGF1531P-01 KGF1531P KGF1531P RF mixer L-Band T4 3570 t4 and 3570 9746 using 7910 im3 GC510 Z0100 3570 1321 | |
Contextual Info: DATA SHEET AF002C1-39, AF002C1-39LF, AF002C4-39, AF002C4-39LF: GaAs IC Control FET Series 300 kHz–2.5 GHz Pin Out Features ● Drain D Source (S) ● 2 1 Low cost SOT-23 package Series or shunt configuration ● Low DC current drain ● Ideal switch building blocks |
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AF002C1-39, AF002C1-39LF, AF002C4-39, AF002C4-39LF: OT-23 J-STD-020 | |
Contextual Info: DATA SHEET AF002C1-39, AF002C1-39LF, AF002C4-39, AF002C4-39LF: GaAs IC Control FET Series 300 kHz–2.5 GHz Pin Out Features ● Drain D Source (S) ● 2 1 Low-cost SOT-23 package Series or shunt configuration ● Low DC current drain ● Ideal switch building blocks |
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AF002C1-39, AF002C1-39LF, AF002C4-39, AF002C4-39LF: OT-23 J-STD-020 | |
AF002C4
Abstract: AF002C1
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OCR Scan |
OT-23 AF002C1-39, AF002C4-39 OT-23 3/98A AF002C4 AF002C1 | |
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Contextual Info: GaAs 1C Control FET Series DC-2.5 GHz ESAlpha AF002C1-39, AF002C4-39 Features 90T-23 • Low Cost SOT-23 Package 0.120 3.05 mm 0.110 (2.79 mm] ■ Series or Shunt Configuration 0.018 (0.45 mm) 3 r " - 0.015 (0.38 mm] nr ■ Low DC Current Drain tr 0.055 (1.40 mm) |
OCR Scan |
AF002C1-39, AF002C4-39 90T-23 OT-23 AF002C4-39 3/98A | |
AF002C4-39
Abstract: AF002C4 AF002C1-39 GaAs IC High Isolation Positive Control Switch
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AF002C1-39, AF002C4-39 OT-23 OT-23 12/02A AF002C4-39 AF002C4 AF002C1-39 GaAs IC High Isolation Positive Control Switch | |
300 ohm 2 ghz Antenna
Abstract: High Power Antenna Switch AF002C1-39 AF002C4 mobile phone transmitter IC changeover switch mobile phone frequency receiver IC AF002C4-39 HIGH POWER ANTENNA SWITCH PIN DIODE
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OCR Scan |
AF002C1-39, AF002C4-39 OT-23 3/98A 300 ohm 2 ghz Antenna High Power Antenna Switch AF002C1-39 AF002C4 mobile phone transmitter IC changeover switch mobile phone frequency receiver IC AF002C4-39 HIGH POWER ANTENNA SWITCH PIN DIODE | |
GaAs fet sot23
Abstract: GaAs IC High Isolation Positive Control Switch
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AF002C1-39, AF002C4-39 OT-23 OT-23 3/99A GaAs fet sot23 GaAs IC High Isolation Positive Control Switch | |
LNA ku-band
Abstract: ku-band pll lnb AT-64020 microwave transmitter 10GHz MGA-725M4 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSMS-2850 HSCH-9401 900-1700MHz
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11a/b/g) 5988-9866EN LNA ku-band ku-band pll lnb AT-64020 microwave transmitter 10GHz MGA-725M4 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSMS-2850 HSCH-9401 900-1700MHz | |
ku-band pll lnb
Abstract: MGA-68563 mga-62563 MMIC SOT 363 HP 5082-3081 ATF-36077 5Ghz lna transistor datasheet schottky diode 3 lead ATF-511P8 power fet 70 mil micro-X Package
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11a/b/g AV00-0061EN AV00-0116EN ku-band pll lnb MGA-68563 mga-62563 MMIC SOT 363 HP 5082-3081 ATF-36077 5Ghz lna transistor datasheet schottky diode 3 lead ATF-511P8 power fet 70 mil micro-X Package | |
ISDB-t modulator
Abstract: ku-band pll lnb HP 5082-3081 MMIC SOT 363 power fet 70 mil micro-X Package VCO 9GHZ 10GHZ MGA-30116 mga-62563 mga 51563 MGA-30316
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11a/b/g AV00-0116EN AV00-0141EN ISDB-t modulator ku-band pll lnb HP 5082-3081 MMIC SOT 363 power fet 70 mil micro-X Package VCO 9GHZ 10GHZ MGA-30116 mga-62563 mga 51563 MGA-30316 | |
2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM
Abstract: 8 pin IC 34063 44xx INA-10386 HP RF TRANSISTOR GUIDE ATF 26886 2.4 ghz video TRANSMITTER CIRCUIT DIAGRAM Rf detector HSMS 8202 ina series 305xx
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5965-7732E 5968-2348E 2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM 8 pin IC 34063 44xx INA-10386 HP RF TRANSISTOR GUIDE ATF 26886 2.4 ghz video TRANSMITTER CIRCUIT DIAGRAM Rf detector HSMS 8202 ina series 305xx | |
pin diode gamma detector
Abstract: Tuning Varactors UHF schottky diode GaAs p-i-n diodes RF limiter PIN diode impatt diode IMPATT 10 GHz gunn diode 6 GHz PIN diode Microwave zero bias detector diodes
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OT-23 OT-23 OT-143 MA4T6365XX pin diode gamma detector Tuning Varactors UHF schottky diode GaAs p-i-n diodes RF limiter PIN diode impatt diode IMPATT 10 GHz gunn diode 6 GHz PIN diode Microwave zero bias detector diodes | |
Contextual Info: Applications • Tx/Rx and diversity – WLAN/Bluetooth – Energy management – RFID –UHF/VHF: public safety bands • WCDMA handsets and data cards • 3G/4G wireless networks • LNB/DBS matrix • Microwave applications up to 8 GHz • Multi-antenna |
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BRO378-12B |