GAAS FET MARKING Search Results

NEC Ga FET marking L

Abstract: NE76184B marking K gaas fet NEC Ga FET marking A nec gaas fet marking NEC Ga FET marking Rf nec 9000 NEC Ga FET marking V NEC Ga FET "marking V" NEC Ga FET
Contextual Info: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity.

NEC Ga FET marking Rf

Abstract: nec gaas fet marking
Contextual Info: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION N E76184B is a N-channel GaAs MES FET housed in ce­ ram ic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity.

smd C1D

Abstract: marking code C1d SMD l0131 datasheet ic 4060 Q62702-L0132 BGV503 BGV903 marking c2d GPS09230 negative voltage regulator ic
Contextual Info: GaAs Support IC BGV503 / BGV903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips – BGV503, BGV903 – for cellular phones • BGV503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s

HA 12058

Abstract: 9971GI nec 2561-2 NEC Ga FET marking A NEC Ga FET marking Rf
Contextual Info: DATA SHEET GaAs MES FET NE76038 G ENERAL PURPOSE N-CHANNEL GaAs MES FET DESCRIPTION NE76038 is a N-channel GaAs MES FET housed in plastic package. The device is fabricated by ion implantation for im proved RF and DC performance reliability and uniform ­ ity. Its excellent low noise and high associated gain make

marking code C1d SMD

Abstract: smd C1D lowpassfilter marking bgv MARKING CODE SMD IC 503
Contextual Info: GaAs Support IC BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips – BGV 503, BGV 903 – for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s

marking code C1d SMD

Abstract: smd C1D Q62702-L0131 Q62702-L0132 marking bgv P-TSSOP-10-1 5v regulator c2pr
Contextual Info: GaAs Support IC BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips – BGV 503, BGV 903 – for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s

Contextual Info: GaAs Support IC BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips – BGV 503, BGV 903 – for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s

gaas fet marking AR

Contextual Info: Infineon tei hnoiosi*» GaAs Support 1C BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips - BGV 503, BGV 903 - for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s

Sony 104A

Contextual Info: SGM2014M] SONY. GaAs N-channel Dual Gate MES FET Description Package Outline The SGM2014M is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable lor a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.

F31Z

Abstract: SPF-3143Z SPF3143Z SPF-3143 pHEMT FET marking A spf3143
Contextual Info: SPF-3143Z SPF-3143Z Low Noise pHEMT GaAs FET LOW NOISE pHEMT GaAs FET NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: SOT-343 Product Description Features SiGe BiCMOS Si BiCMOS SiGe HBT 9 GaAs pHEMT Si CMOS Si BJT GaN HEMT „ 0.58dB NFMIN at 2GHz

Contextual Info: CLY5 Datasheet High-Power Packaged GaAs FET Description The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable

Contextual Info: CLY5 Datasheet High-Power Packaged GaAs FET Description The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable

MARKING 717

Abstract: sot-223 MARKING CODE 718 Power amplifier for mobile phones For sot223
Contextual Info: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable

Contextual Info: CLY10 Datasheet High-Power Packaged GaAs FET Description: The CLY10 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable

Contextual Info: CLY5 Datasheet High-Power Packaged GaAs FET Description The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable

Contextual Info: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable

KGF2236

Abstract: k2236 J0124 16PSSOP TA 8644 12943
Contextual Info: This version: Jul. 1998 Previous version: — E2Q0056-18-73 ¡ electronic components KGF2236 ¡ electronic components KGF2236 Dual Monolithic GaAs Power FET GENERAL DESCRIPTION The KGF2236, housed in a SMD-type plastic package, is a dual monolithic GaAs power FET that

PO 9038

Abstract: gaas fet marking a MAX 8985 pin diagram of 7414 019 triquint d 5287 power FET transistor 2 gigahertz Gp 28 db transistor 5478 01380
Contextual Info: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable

Contextual Info: CLY10 Datasheet High-Power Packaged GaAs FET Description: The CLY10 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable

cly10

Abstract: CLY 10
Contextual Info: CLY10 Datasheet High-Power Packaged GaAs FET Description: The CLY10 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable

Contextual Info: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable

CLY5

Abstract: 93 69 MARKING CODE
Contextual Info: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable

04435

Abstract: CLY 70
Contextual Info: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable

CLY5

Abstract: MAX 8985 09069 ipc 9702 07293 13.3921
Contextual Info: CLY5 Datasheet High-Power Packaged GaAs FET Description The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable