GAALAS Search Results

SFH485P

Abstract: OHLPY985
Contextual Info: GaAlAs-IR-Lumineszenzdiode 880 nm GaAlAs Infrared Emitter (880 nm) Lead (Pb) Free Product - RoHS Compliant SFH 485 P Wesentliche Merkmale Features • GaAlAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger

Contextual Info: TSAL6400 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • 94 8389 DESCRIPTION Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 940 nm

Contextual Info: TSML1000, TSML1020, TSML1030, TSML1040 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES TSML1020 TSML1000 • Package type: surface mount • Package form: GW, RGW, yoke, axial • Dimensions L x W x H in mm : 2.5 x 2 x 2.7

Contextual Info: PRELIMINARY DATA SHEET PHOTOCOUPLER PS9822-1,-2 1 Mbps OPEN COLLECTOR OUTPUT TYPE 8-PIN SSOP SO-8 HIGH-SPEED PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS9822-1 and PS9822-2 are active-low type high-speed photocouplers that use a GaAlAs light-emitting diode

Contextual Info: Not for New Design TSSF4500 Vishay Semiconductors High Speed Infrared Emitting Diode in Side View Package Description TSSF4500 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package with

VSMB2020X01

Abstract: VEMD2000X01 VSMY2850 VSMB2000 VEMD20 980050
Contextual Info: VSMB2000X01, VSMB2020X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, DH VSMB2000X01 FEATURES VSMB2020X01 • Package type: surface mount • Package form: GW, RGW • Dimensions L x W x H in mm : 2.3 x 2.3 x 2.8

4580

Abstract: opto 2505 SFH4585 fotodiod
Contextual Info: GaAlAs-IR-Lumineszenzdioden 880 nm in SMR Gehäuse GaAlAs Infrared Emitters (880 nm) in SMR® Package Lead (Pb) Free Product - RoHS Compliant SFH 4580 SFH 4585 SFH 4580 SFH 4585 Wesentliche Merkmale Features • • • • • GaAlAs-LED mit sehr hohem Wirkungsgrad

Contextual Info: GaAlAs-IR-Lumineszenzdiode 880 nm GaAlAs Infrared Emitter (880 nm) Lead (Pb) Free Product - RoHS Compliant SFH 485 P Wesentliche Merkmale Features • GaAlAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger

OD-669

Abstract: OD-663 OD-666
Contextual Info: HIGH-POWER GaAlAs IRLED ILLUMINATOR .053 .067 .325 LED CHIPS .140 R REF. ONLY OD-663 FEATURES .142 .152 • Super high power output • 880nm peak emission EPOXY .084 .096 .342 R .480 1.225 1.255 .030 .426 .432 • Three chips connected in series • TO-66 header for good heat dissipation

OD-880FHT

Abstract: OD-880LHT OD-880WHT OD880FHT
Contextual Info: HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS .006 HIGH MAX OD-880WHT ANODE CASE • Extended operating temperature range .209 .212 .015 • No internal coatings • No derating or heat sink required to 80°C .183 .152 .187 .156 .100 .041

OD-880

Contextual Info: HIGH-POWER GaAlAs IR EMITTERS OD-880 FEATURES EPOXY DOME ANODE CASE .125 MAX • Very high power output .209 .212 .042 .046 .017 • Wide angle of emission • High reliability liquid-phase epitaxially grown GaAlAs • TO-46 Header .164 .167 .100 .041 All metal surfaces are gold plated. Dimensions are

telefunken ha 880

Contextual Info: T em ic TSHA620 S e m i c o n d u c t o r s GaAlAs Infrared Emitting Diodes in 05 mm T-P/t Package Description The TSHA620. series are high efficiency infrared emit­ ting diodes in GaAlAs on GaAIAs technology, molded in a clear, untinted plastic package.

LT 5203

Abstract: a5201
Contextual Info: Temic TSHA520. S h m i n n d u t l •* r v GaAlAs Infrared Emitting Diodes in 05 mm (T-1% Package Description The TSH A 520. series are high efficiency infrared em itting diodes in G aA lA s on G aA lA s technology, m olded in a clear, untinted plastic package.

OHB660CB

Contextual Info: OHB660CB Red EMITTING DIODES The OHB660CB is a GaAlAs LED mounted in a TO-18 metal can package is ideal for use with plastic fiber optic cables. As light loss is minimal at a wavelength of 660nm. FEATURES ● Wide beam angle ● High-speed response ● Low profile package

TSTA7100

Contextual Info: Temic TSTA7100 Semiconductors GaAlAs IR Emitting Diode, Hermetically Sealed TO 18 Case Description TSTA7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a very high radiant

Contextual Info: Tem ic TSTA7100 Semiconductors GaAlAs IR Emitting Diode, Hermetically Sealed TO 18 Case Description TSTA 7100 is a high efficiency infrared em itting diode in G aA lA s on G aA lA s technology in a herm etically sealed T O -1 8 package. Its glass lens provides a very high radiant

LS 7447

Abstract: 7447 ls itt 7441
Contextual Info: T em ic TSIP440. S e m i c o n d u c t o r s GaAs/GaAlAs IR Emitting Diodes in 0 3 mm T-l Package Description T S I P 4 4 .- s e r ie s are h ig h e f f i c ie n c y in f r a r e d e m itt in g d io d e s in G a A I A s o n G a A s te c h n o lo g y , m o l d e d in c le a r ,

Contextual Info: BRIGHT LED ELECTRONICS CORP. BL-BD131 SINCE 1981 ● Features: ● Package dimensions: 1. Chip material: GaAlAs/ GaAs 2. Emitted color : Super Red 3.80 .150 3. Lens Appearance : Red Diffused 3.00(.118) 4. Low power consumption. 5. High efficiency. 6. Versatile mounting on P.C. Board or panel.

8002E

Contextual Info: Tem ic TSHA520 S e m i c o n d u c t o r s GaAlAs Infrared Emitting Diodes in 05 mm T-1% Package Description The TSHA520. series are high efficiency infrared emit­ ting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package,

ss 7941

Abstract: TSHA4400
Contextual Info: Tem ic TSHA440. S e m i c o n d u c t o r s GaAlAs Infrared Emitting Diodes in 0 3 mm T -l Package Description The TSHA44.series are high efficiency infrared ermitting diodes in GaAlAs on GaAlAs technology, molde;d in a clear, untinted plastic package.

GPL06899

Contextual Info: GaAlAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAlAs Infrared Emitter in SMT Package SFH 4281 Wesentliche Merkmale • GaAIAs-LED mit sehr hohem Wirkungsgrad • Gute Linearität Ιe = f [IF] bei hohen Strömen • Gleichstrom- (mit Modulation) oder Impulsbetrieb möglich

TSAL5100 Vishay

Abstract: TSAL5100
Contextual Info: TSAL5100 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description TSAL5100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs

Contextual Info: TSML1000/1020/1030/1040 Vishay Telefunken Extented Power IR Emitting Diode in SMD Package Description TSML1000 TSML10.0 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package This technology represents best performance for

Contextual Info: TSHG6200 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in T-1¾ Package Description TSHG6200 is a high speed infrared emitting diode in GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. The new technology combines high speed with high