GA30 Search Results

diode 944 lg

Abstract: B301A ga331 LT 943 diode 945 lg
Contextual Info: SCRs GA300 GA300A GA301 GA301A Commercial Nanosecond Switching Planar GB300 GB300A GB301 GB301A FEA TU RES DESCRIPTION • • • • • Unitrode’s Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with the high current switching capability inherent in SCRs. With this

Contextual Info: DIGITRON SEMICONDUCTORS GA300, GA300A, GA301, GA301A SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Diode LT 432

Abstract: rgk 20/2 GA300 GA301 GA301A GB301 CA301A GA300A GB300 GB300A
Contextual Info: SCRs GA300 GA300A GA301 GA301A Commercial Nanosecond Switching Planar GB300 GB300A GB301 GB301A FEATURES DESCRIPTION • • • • • The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with the high current switching capability inherent in SCRs. With this device

GA300TD60U

Contextual Info: PD -50057D GA300TD60U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

CA3038A

Abstract: AC voltmeter diagram rca wv-38a CA3030A CA3029A CA3037A wv-38a 92CS-14864 CA30 CA301 CA3010A
Contextual Info: Operational Amplifiers _ CA3010A, CA3015A, GA3029A, CA3030A, CA3037A, CA3038A Operational Amplifiers Features: • These new types have a ll the desirable features and characteristics of their prototypes plus low er noise figures and im proved inpu t charac­

TE 555-1

Abstract: 419 on 80 GA201A 2n3031 2n2031
Contextual Info: Micmsemj Silicon Controlled Rectifiers Part Num ber GA200 GA200A GA300 GA300A GA201 GA201A GA301 GA301A GA100 GA101 GA102 2N3027 2N3Q30 ID100 JAN2N3027 JAN2N3030 JANTX2N3027 JANTX2N3030 2N3028 2N3031 AA100 AA107 AA114 ID101 JAN2N3028 JAN2N3031 JANTX2N3028

GA300TD60s

Contextual Info: GA300TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" Standard Speed IGBT , 300 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Low VCE(on) • Square RBSOA • HEXFRED antiparallel diode with ultrasoft reverse

GA300TD60U

Contextual Info: PD -5.057C PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA300TD60U Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

thyristor 1a 60v

Abstract: GA301 GA301A ga300 unitrode GA300 GA300A GB300 GB300A GB301 GB301A
Contextual Info: GA300 GA300A GA301 GA301A SCRs Commercial Nanosecond Switching Planar FEATURES • Rise Tim e: 10ns • Delay Tim e: 10ns • Recovery Tim e: 0.5,us • Pulse C urrent: to 100A • Turn-on w ith 20ns, 10mA gate pulse GB300 GB300A GB301 GB301A DESCRIPTION U n itro d e ’s N anosecond T h y ris to r S w itch com bin e s th e tu rn -on speed o f logic level

PH 33 G

Contextual Info: POWER INDUCTORS - LEA D ED G A 30 PART NUM BER GA30-102K GA30-122K GA30-152K GA30-182K GA30-222K GA30-272K GA30-332K GA30-392K GA30-472K GA30-562K GA30-682K GA30-822K GA30-103K GA30-123K GA30-153K GA30-183K GA30-223K GA30-273K GA30-533K GA30-393K GA30-473K

inductors 2000 mH

Abstract: GA30-333KLF
Contextual Info: POWER INDUCTORS - THRU HOLE GA30LF PART NUMBER GA30-102KLF GA30-122KLF GA30-152KLF GA30-182KLF GA30-222KLF GA30-272KLF GA30-332KLF GA30-392KLF GA30-472KLF GA30-562KLF GA30-682KLF GA30-822KLF GA30-103KLF GA30-123KLF GA30-153KLF GA30-183KLF GA30-223KLF GA30-273KLF

Contextual Info: GA300TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" Standard Speed IGBT , 300 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Low VCE(on) • Square RBSOA • HEXFRED antiparallel diode with ultrasoft reverse

DIODE 1439

Abstract: 60 27755 GA300TD60U
Contextual Info: PD -50057E GA300TD60U "HALF-BRIDGE" IGBT DUAL INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

GA300TD60S

Contextual Info: GA300TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" Standard Speed IGBT , 300 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Low VCE(on) • Square RBSOA • HEXFRED antiparallel diode with ultrasoft reverse

Contextual Info: STANDARD POWER INDUCTORS - THRU HOLE GA30 GA30LF* TRADITIONAL Pb RoHS COMPLIANT Wirewound, High Current PART NUMBER L µH @ 1kHz NOM SRF MHz MIN DCR OHMS MAX SATURATION CURRENT A DC CURRENT RATING A DC FERRITE CORE GA30-102K 10 GA30-122K 12 GA30-152K 15 GA30-182K 18

GA30-105K

Abstract: GA30-684K
Contextual Info: GA30 SERIES 37 Standard inductance values, other non-standard values and tolerances also available. MINIATURE HIGH CURRENT CHOKES Package – heat-shrinkable, flame retardant tubing with high resistivity Ferrite coil form. Operating temperature: -55o to +105oC.

GA300TD60U

Contextual Info: PD -5.057C PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA300TD60U Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

GA30

Abstract: GA30-683K
Contextual Info: POWER INDUCTORS - THRU HOLE GA30 High Current Power Inductors PART NUMBER GA30-102K GA30-122K GA30-152K GA30-182K GA30-222K GA30-272K GA30-332K GA30-392K GA30-472K GA30-562K GA30-682K GA30-822K GA30-103K GA30-123K GA30-153K GA30-183K GA30-223K GA30-273K GA30-333K

harris 3096

Contextual Info: H A R R IS SEfllCOND SECTOR HARRIS 40E D B 4 3 D 2 2 7 1 0D3S30M T I IHAS GA3096, CA 3096A CA3096C N -P -N /P -N -P Transistor Arrays August 1991 CA3096A, CA309G, CA3096C Essentia/ Differences Applications • Five-Independent Transistors ►Three N-P-N and

Contextual Info: SCRs GA300 GA300A GA301 GA301A Commercial Nanosecond Switching Planar GB300 GB300A GB301 GB301A FEATURES DESCRIPTION • • • • • The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with the high current switching capability inherent in SCRs. With this device

Contextual Info: VS-GA300TH60S www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 600 V and 300 A FEATURES • High short circuit capability • 10 s short circuit capability • VCE on with positive temperature coefficient • Latch-up free

Contextual Info: PD -5.057C International lO R R e c tifi GT P R E LIM IN A R Y "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA300TD60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V • UltraFast: Optimized for high operating frequencies 8-40 kHz In hard switching, >200

PH 33 G

Contextual Info: GA30 SERIES GOWANDA MINIATURE HIGH CURRENT CHOKES .900 in. 22.86 mm. „ MAX. 37 Standard inductance values, other non-standard values and tolerances also available. Package - heat-shrinkable, flame retardant tubing with high resistivity Ferrite coil form.

Contextual Info: GA30 SERIES GOWAIMDA fé- MINIATURE HIGH CURRENT CHOKES ^-05" 37 Standard inductance values, other non-standard values and tolerances also available. Package - heat-shrinkable, flame retardant tubing with high resistivity Ferrite coil form. Operating temperature: -55° to +105QC.