GA200SA60 Search Results

GA200SA60SP

Contextual Info: Bulletin I27235 07/06 GA200SA60SP Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package 2,500 volt AC

Contextual Info: PD -50066A GA200SA60U Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: Not recommended for new design, use VS-GA250SA60S VS-GA200SA60SP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available

ga200sa60up

Abstract: N-CHANNEL INSULATED GATE TYPE
Contextual Info: GA200SA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

GA200SA60SP

Contextual Info: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Standard Speed IGBT , 100 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 1 kHz C • Lowest conduction losses available • Fully isolated package (2500 VAC)

e789

Abstract: ic 3020
Contextual Info: GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

GA200SA60UP

Contextual Info: GA200SA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

GA200SA60SP

Contextual Info: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)

Contextual Info: International lö R R ectifi 0r PD -5.066 P R E LIM IN A R Y GA200SA60U Ultra-Fast Speed IGBT INSULATED GATE BIPOLARTRANSISTOR F eatu res • U ltraFast: O p tim ize d for m inim um saturation voltage V ces = 600V a nd operating freq u en cies up to 4 0 k H z in hard

Contextual Info: GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: VS-GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: PD- 5.070 International IOR Rectifier GA200SA60S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features c • Standard: Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package 2,500 volt AC

CGC SWITCH

Abstract: transistor 342 pf GA200SA60SP
Contextual Info: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)

Contextual Info: GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

smps tig welding

Abstract: transistor 342 G GA200SA60SP
Contextual Info: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)

Contextual Info: VS-GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: optimized for minimum saturation voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

i.g.bt

Abstract: IGBT GS ga200sa60 SOT227Package
Contextual Info: GA200SA60S SOT-227 Package Details Dimensions are shown in millimeters inches 3 8 .3 0 ( 1.5 08 ) 3 7 .8 0 ( 1.4 88 ) 4 .4 0 (.17 3 ) 4 .2 0 (.16 5 ) C HAM FER 2 .0 0 ( .0 7 9 ) X 45 7 L E A D A S S IG M E N T S E -A 4 E S C 4 1 3 G E IG B T 2 5 .7 0 ( 1.0 12 )

SOT-227 heatsink

Abstract: GA200SA60S
Contextual Info: PD- 5.070 PRELIMINARY GA200SA60S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package 2,500 volt AC

Contextual Info: I , PD- 5.070 In te rn a tio n a l lO R Rectifier PRELIMINARY GA200SA60S Standard Speed IGBT INSULATED GATE BIPOLARTRANSISTOR Features • S ta n d a rd : O ptim ize d for m inim um saturation vo lta g e and low operating fre q u e n cie s up to 1kH z • Lowest conduction losses available

TRANSISTOR ASY 0.25 W

Abstract: c103 a ge
Contextual Info: PD - 5.066 International I R Rectifier GA200SA60U INSULATED GATE BIPOLAR TRANSISTOR Ultra-Fast Speed IGBT Features • U ltra F a st: O p tim ize d fo r m in im um satu ra tion vo lta g e a n d op e ra tin g fre q u e n cie s up to 4 0 kH z in hard sw itch ing , > 2 0 0 kH z in re so n a n t m ode

GA200SA60U

Abstract: k241
Contextual Info: PD -50066A GA200SA60U Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

GA200SA60U

Contextual Info: PD -50066A GA200SA60U Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses