GA10JT06 Search Results

GA10JT06 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
GA10JT06-CAL SPICE Abstract: high-temperature-sic-bare-die LTspice Contextual Info: GA10JT06-CAL SPICE Model Parameters This is a secure document. Please copy this code from the SPICE model PDF file on our website into LTSPICE (version 4) software for simulation of the GA10JT06-CAL.	Original	GA10JT06-CAL sic/baredie/sjt/GA10JT06-CAL GA10JT06-CAL. 27-FEB-2014 GA10JT06 08E-47 26E-28 73E-10 86E-10 90E-2 GA10JT06-CAL SPICE high-temperature-sic-bare-die LTspice	PDF
Contextual Info: Die Datasheet GA10JT06-CAL Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID (Tc = 25°C) hFE(Tc = 25°C) = = = = 600 V 120 mΩ 25 A 120 Features •        250°C maximum operating temperature Gate Oxide Free SiC switch	Original	GA10JT06-CAL GA10JT06 4E-48 858E-28 96E-10 083E-10	PDF
Contextual Info: Electrical Datasheet* GA10JT065-CAL Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) = = = = 650 V 1.7 V 10 A 170 m Features •       250 °C maximum operating temperature Temperature independent switching performance	Original	GA10JT065-CAL GA10JT065 73E-46 50E-28 77E-10 23E-10 20E-02 GA10JT065-CAL	PDF

Catalog Datasheet

Type

Document Tags

PDF

GA10JT06-CAL SPICE

Abstract: high-temperature-sic-bare-die LTspice
Contextual Info: GA10JT06-CAL SPICE Model Parameters This is a secure document. Please copy this code from the SPICE model PDF file on our website into LTSPICE (version 4) software for simulation of the GA10JT06-CAL.

Original

GA10JT06-CAL sic/baredie/sjt/GA10JT06-CAL GA10JT06-CAL. 27-FEB-2014 GA10JT06 08E-47 26E-28 73E-10 86E-10 90E-2 GA10JT06-CAL SPICE high-temperature-sic-bare-die LTspice

PDF

Contextual Info: Die Datasheet GA10JT06-CAL Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID (Tc = 25°C) hFE(Tc = 25°C) = = = = 600 V 120 mΩ 25 A 120 Features •        250°C maximum operating temperature Gate Oxide Free SiC switch

Original

GA10JT06-CAL GA10JT06 4E-48 858E-28 96E-10 083E-10

PDF

Contextual Info: Electrical Datasheet* GA10JT065-CAL Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) = = = = 650 V 1.7 V 10 A 170 m Features •       250 °C maximum operating temperature Temperature independent switching performance

Original

GA10JT065-CAL GA10JT065 73E-46 50E-28 77E-10 23E-10 20E-02 GA10JT065-CAL

PDF