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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
G8376		Hamamatsu	InGaAs PIN photodiode	Original	PDF	218.94KB	2
G8376-01		Hamamatsu	InGaAs PIN photodiode	Original	PDF	218.94KB	2
G8376-01		Hamamatsu Photonics	InGaAs PIN photodiode	Original	PDF	224.91KB	2
G8376-02		Hamamatsu	InGaAs PIN photodiode	Original	PDF	218.94KB	2
G8376-02		Hamamatsu Photonics	InGaAs PIN photodiode	Original	PDF	224.91KB	2
G8376-03		Hamamatsu	InGaAs PIN photodiode	Original	PDF	218.94KB	2
G8376-03		Hamamatsu Photonics	InGaAs PIN photodiode	Original	PDF	224.91KB	2
G8376-05		Hamamatsu	InGaAs PIN photodiode	Original	PDF	218.94KB	2

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Seiko Epson Corporation SG-8018CG 83.765880M-TJHPA0 Standard Clock Oscillators SG-8018CG 83.765880M-TJHPA0: MHZ OSC 1.8V 3.3V +/-50PPM -40 105C O/E 1K TR
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Seiko Epson Corporation SG-8018CG 83.765880M-TJHSA0 Standard Clock Oscillators SG-8018CG 83.765880M-TJHSA0: MHZ OSC 1.8V 3.3V +/-50PPM -40 105C ST 1K TR
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Seiko Epson Corporation SG-8101CG 83.765880M-TCHSA0 Standard Clock Oscillators SG-8101CG 83.765880M-TCHSA0: OSC MHZ 1.8V 3.3V +/-20PPM -40 105C ST DEFAULT 1K TR
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Seiko Epson Corporation SG-8101CG 83.765880M-TBGSA0 Standard Clock Oscillators SG-8101CG 83.765880M-TBGSA0: OSC MHZ 1.8V 3.3V +/-15PPM -40 85C ST DEFAULT 1K TR
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Seiko Epson Corporation SG-8101CG 83.765880M-TBGPA0 Standard Clock Oscillators SG-8101CG 83.765880M-TBGPA0: OSC MHZ 1.8V 3.3V +/-15PPM -40 85C O/E DEFAULT 1K TR
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G8376 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
G8376-01 Contextual Info: PHOTODIODE InGaAs PIN photodiode G8376 series Standard type InGaAs PIN photodiodes are NIR near infrared detectors that feature high-speed response and low noise. Various active area sizes are provided to meet wide applications. Features Applications l Low noise, low dark current	Original	g8376 g8376-01 g8376-02 g8376-03 +3g8376-05 se-171 kird1051e04	PDF
G8376 Abstract: G8376-01 G8376-02 G8376-03 G8376-05 InGaAs photodiode spectral response Contextual Info: PHOTODIODE InGaAs PIN photodiode G8376 series Standard type InGaAs PIN photodiodes are NIR near infrared detectors that feature high-speed response and low noise. Various active area sizes are provided to meet wide applications. Features Applications l Low noise, low dark current	Original	g8376 g8376-01 g8376-02 g8376-03 +4g8376-05 se-171 kird1051e02 ingaas photodiode spectral response	PDF
Contextual Info: PHOTODIODE InGaAs PIN photodiode G8376 series Standard type InGaAs PIN photodiodes are NIR near infrared detectors that feature high-speed response and low noise. Various active area sizes are provided to meet wide applications. Features Applications l Low noise, low dark current	Original	g8376 g8376-01 g8376-02 g8376-03 +3g8376-05 se-171 kird1051e03	PDF
G8376 Abstract: G8376-03 G8376-05 photodiode InGaAs NEP shunt italia g837605 Contextual Info: InGaAs PIN photodiodes G8376 series Standard type InGaAs PIN photodiodes are NIR near infrared detectors that feature high-speed response and low noise. Features Low noise, low dark current Low terminal capacitance 3-pin TO-18 package Applications NIR (near infrared) photometry	Original	g8376 g8376-03 g8376-05 se-171 +4kird1051e05 photodiode ingaas nep shunt italia g837605	PDF
G8376-05 Abstract: G8376-03 G8376 KIRD1051J05 2010dn Contextual Info: InGaAs PINフォトダイオード G8376シリーズ標準タイプ低雑音で高速応答のNIR 近赤外検出素子です。特長低雑音低暗電流 3ピンTO-18パッケージ低端子間容量用途 NIR (近赤外)測光光通信仕様	Original	g8376 3to-18 g8376-03 g8376-05 +2kird1051j05 2010dn	PDF
G8376 Abstract: G8376-01 G8376-02 G8376-03 G8376-05 Contextual Info: PHOTODIODE InGaAs PIN photodiode G8376 series Standard type InGaAs PIN photodiodes are NIR near infrared detectors that feature high-speed response and low noise. Various active area sizes are provided to meet wide applications. Features Applications l Low noise, low dark current	Original	g8376 g8376-01 g8376-02 g8376-03 +3g8376-05 se-171 kird1051e03	PDF
Contextual Info: InGaAs PINフォトダイオード G11777-003P 表面実装型COB chip on board パッケージ G11777-003Pは表面実装型COBパッケージの小型・近赤外線検出素子です。従来品のメタルパッケージタイプ (G837603)に比べて、大幅に小型化を実現しました。感度波長範囲は0.9～1.7 mで (最大感度波長 1.55 μm)、高感度・低ノイズを	Original	g11777-003p g837603 kirdb0475ja kirdb0476ja +3kirdb0470ja kirda0213jc kird1114j03	PDF
G11777-003P Abstract: spot light size photodiode InGaAs PIN photodiode Wavelength .6 to 1.7 InGaas PIN photodiode chip Contextual Info: InGaAs PIN photodiode G11777-003P Surface mounted type COB chip on board package The G11777-003P is a small-size near infrared detector available in a surface mount COB (chip on board) package. Its size is drastically reduced compared to the previous metal package type (G8376-03). The spectral response covers a	Original	g11777-003p g8376-03 kird1114e03 spot light size photodiode +2ingaas pin photodiode wavelength .6 to 1.7 ingaas pin photodiode chip	PDF
Contextual Info: PHOTODIODE InGaAs PIN photodiode G8376 series Standard type InGaAs PIN photodiodes are NIR near infrared detectors that feature high-speed response and low noise. Various active area sizes are provided to meet wide applications. Features Applications l Low noise, low dark current	Original	g8376 g8376-01 g8376-02 g8376-03 +3g8376-05 se-171 kird1051e03	PDF
G8376 Abstract: G8376-01 G8376-02 G8376-03 G8376-05 Contextual Info: PHOTODIODE InGaAs PIN photodiode G8376 series Standard type InGaAs PIN photodiodes are NIR near infrared detectors that feature high-speed response and low noise. Various active area sizes are provided to meet wide applications. Features Applications l Low noise, low dark current	Original	g8376 g8376-01 g8376-02 g8376-03 +3g8376-05 se-171 kird1051e04	PDF
Contextual Info: Photosensor amplifier C8366 series Current-to-voltage conversion amplifier C8366: for high-speed Si PIN photodiode C8366-01: for high-speed InGaAs PIN photodiode Features Applications Wide band DC to 100 MHz Typ. (-3 dB; varies depending on the photodiode used)	Original	c8366 c8366-01 b1201 kacc1067e06	PDF
L11938 Abstract: s11850 Contextual Info: NEWS 02 2011 SOLID STATE PRODUCTS PAGE 06 High-sensitivity dual-element detectors ideal for gas analysis applications LASER PRODUCTS Mid-Infrared Quantum Cascade Lasers PAGE 18 ELECTRON TUBE PRODUCTS PAGE 23 Xenon Flash Light Source LF2 L11729, L11730 SYSTEMS PRODUCTS	Original	l11729 l11730 c10910 t11262-01 +6t11722-01 l12004-2190h-c d-82211 de128228814 l11938 s11850	PDF
Contextual Info: フォトセンサアンプ C8366シリーズ電流－電圧変換アンプ C8366: 高速Si PINフォトダイオード用 C8366-01: 高速InGaAs PINフォトダイオード用特長用途広帯域 DC～100 MHz typ. (-3 dB, フォトダイオ－ドの性能に	Original	c8366 c8366-01 o-8/to-5/to-18 awg24 +3kaccc0755ja e2573 kacca0334ja	PDF
Contextual Info: 技術資料赤外線検出素子の特性と使い方 1001 赤外線は可視光とマイクロ波の間の0.75 µm~1000 µmの電磁波です。この広い領域をカバーするため多くの赤外線検出素子が開発されています。この小冊子では、浜松ホトニクスが製造販売している赤外線検出素子の特性と使い方について説明	Original	kird9001j04	PDF