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    Harris Semiconductor HGTG32N60E2

    IGBT-Single 600V 50A 208W TO247
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    Rochester Electronics HGTG32N60E2 2,969 1
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    Philips Semiconductors G32N60E2

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    Chip 1 Exchange G32N60E2 14
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    G32N60E2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    G32N60e2

    Abstract: HGTG32N60E2 AN7260 AN7254 hgtg32n60
    Contextual Info: G32N60E2 S E M I C O N D U C T O R 32A, 600V N-Channel IGBT April 1995 Features Package • 32A, 600V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time - 600ns EMITTER COLLECTOR GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance


    Original     		hgtg32n60e2o-247600ns150oc+51-800-4-harrisg32n60e2an7260an7254hgtg32n60 PDF

    G32N60E2

    Abstract: AN7254 AN7260 HGTG32N60E2
    Contextual Info: G32N60E2 32A, 600V N-Channel IGBT April 1995 Features Package • 32A, 600V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time - 600ns EMITTER COLLECTOR GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance • Low Conduction Loss Description


    Original     		hgtg32n60e2o-247600ns150oc+3g32n60e2an7254an7260 PDF

    G32N60E2

    Contextual Info: HG G32N60E2 Semiconductor 32A, 600V N-Channel IGBT A pril 1995 Package Features • 32A, 600V JEDEC STYLE TO-247 EMITTER • Latch Free Operation • Typical Fall Time - 600ns • High Input Impedance • Low Conduction Loss Description The IGBT is a M OS gated high voltage switching device com bin­


    OCR Scan     		tg32n60e2o-247600nsg32n60e2 PDF