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    G30N60A4 TRANSISTOR Search Results

    G30N60A4 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    		Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    		Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    ICL7667MJA
    		Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    93L422ADM/B
    		Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    27S185DM/B
    		Rochester Electronics LLC 27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 PDF Buy

    G30N60A4 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    G30N60A4

    Abstract: HGTG30N60A4
    Contextual Info: HGTG30N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGTG30N60A4 HGTG30N60A4 150oC. 100kHz 200kHz 125oC G30N60A4 PDF

    G30N60a4

    Abstract: G30N60A IGBT G30N60A4 G30N60 TA49343 G30N60A4 transistor HGTG30N60A4 HGTP30N60A4D ICE 280 TA49373
    Contextual Info: HGTG30N60A4 Data Sheet August 2003 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    Original     		HGTG30N60A4 HGTG30N60A4 150oC. 100kHz 200kHz 125oC G30N60a4 G30N60A IGBT G30N60A4 G30N60 TA49343 G30N60A4 transistor HGTP30N60A4D ICE 280 TA49373 PDF

    g30n60a4

    Abstract: g30n60a IGBT G30N60A4 TA49343 G30N60A4 transistor g30n60 12V 30A diode HGTG30N60A4 TA49373 ICE 280
    Contextual Info: HGTG30N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    Original     		HGTG30N60A4 HGTG30N60A4 150oC. 100kHz 200kHz 125oC g30n60a4 g30n60a IGBT G30N60A4 TA49343 G30N60A4 transistor g30n60 12V 30A diode TA49373 ICE 280 PDF

    G30N60A4

    Abstract: HGTG30N60A4 IGBT G30N60A4 g30n60a smart ups 750 circuit g30n60 247A03
    Contextual Info: HGTG30N60A4 Data Sheet April 2013 600V SMPS IGBT Features The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high


    Original     		HGTG30N60A4 HGTG30N60A4 TA49343. O-247 G30N60A4 G30N60A4 IGBT G30N60A4 g30n60a smart ups 750 circuit g30n60 247A03 PDF

    G30N60A4

    Abstract: G30N60A G30N60 IGBT G30N60A4 TA49343 TA49373 HGTG30N60A4 G30N60A4 transistor LD26
    Contextual Info: HGTG30N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    Original     		HGTG30N60A4 HGTG30N60A4 150oC. 100kHz 200kHz 125oC G30N60A4 G30N60A G30N60 IGBT G30N60A4 TA49343 TA49373 G30N60A4 transistor LD26 PDF

    g30n60a4

    Abstract: IGBT G30N60A4 G30N60A HGTG30N60A4 TA49343 G30N60A4 transistor LD26 TA49373
    Contextual Info: HGTG30N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGTG30N60A4 HGTG30N60A4 150oC. 100kHz 200kHz 125oC g30n60a4 IGBT G30N60A4 G30N60A TA49343 G30N60A4 transistor LD26 TA49373 PDF

    g30n60a4

    Abstract: g30n60 IGBT G30N60A4 G30N60A4 transistor G30N60A HGTG30N60A4 LD26 TA49343 TA49373
    Contextual Info: HGTG30N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGTG30N60A4 HGTG30N60A4 150oC. 100kHz 200kHz 125oC g30n60a4 g30n60 IGBT G30N60A4 G30N60A4 transistor G30N60A LD26 TA49343 TA49373 PDF

    G30N60A4

    Abstract: hgtp30n60a4
    Contextual Info: HGTG30N60A4 Data Sheet November 2013 600 V SMPS IGBT Features The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high


    Original     		HGTG30N60A4 HGTG30N60A4 TA49343. G30N60A4 hgtp30n60a4 PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF