G2 MARKING DIODE Search Results

Si5905DC

Abstract: Si5905DC-T1 MARKING CODE DB
Contextual Info: Si5905DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.090 @ VGS = -4.5 V 4.1 -8 0.130 @ VGS = -2.5 V 3.4 0.180 @ VGS = -1.8 V 2.9 S1 S2 1206-8 ChipFETt t 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code

Si5902DC

Contextual Info: Si5902DC New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 D1 1206-8 ChipFET D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code

Contextual Info: NCP81174 Product Preview 4/3/2-Phase Synchronous Buck Controller with Power Saving Mode and PWM VID Interface PACKAGE AND MARKING INFORMATION 32 PIN QFN 5.0 x 5.0mm G3 G2 G1 30 DRVON 31 G4 VREF 32 VCC PINOUT REFIN The NCP81174 is a general-purpose four-phase

Si1901DL

Abstract: D234
Contextual Info: Si1901DL New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QD XX YY S1 Lot Traceability

Si1906DL

Contextual Info: Si1906DL New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PC XX YY S1 Lot Traceability and Date Code

Contextual Info: Ordering number : ENA2204A EFC6604R N-Channel Power MOSFET 12V, 13A, 9.0mΩ, Dual EFCP http://onsemi.com Features • 2.5V drive • Common-drain type • 2KV ESD HBM • Protection diode in • Halogen free compliance Applications • Lithium-ion battery charging and discharging switch

Contextual Info: Ordering number : ENA2288 EFC4627R N-Channel Power MOSFET 12V, 6A, 29.5mΩ, Dual EFCP http://onsemi.com Features • 2.5V drive • Protection diode in • Common-drain type • Halogen free compliance Applications • Lithium-ion battery charging and discharging switch

marking code V6 surface mount diode

Abstract: marking code V5 surface mount diode marking code V6 DIODE V6 marking code diode marking v6 zener diode kvp diode marking code kV5 surface mount diode MARKING V32 SOT23 kvp 30 DIODE DZ23C6V8
Contextual Info: DZ23C2V7 - DZ23C51 300mW DUAL SURFACE MOUNT ZENER DIODE POWER SEMICONDUCTOR Features • • • • • Dual Zeners in Common Cathode Configuration 300 mW Power Dissipation Ideally Suited for Automatic Insertion ∆ VZ For Both Diodes in One Case is ≤ 5%

Contextual Info: Ordering number : EN*A2291 EFC6611R Advance Information http://onsemi.com N-Channel Power MOSFET 12V, 27A, 3.2mΩ, Dual EFCP Features • 2.5V drive • Protection diode in • Halogen free compliance • Common-drain type • 2KV ESD HBM Applications • Lithium-ion battery charging and discharging switch

Contextual Info: Ordering number : ENA2292A EFC4626R N-Channel Power MOSFET 24V, 5A, 46.2mΩ, Dual EFCP http://onsemi.com Features • 2.5V drive  Protection diode in  Common-drain type  2KV ESD HBM  Halogen free compliance Applications  Lithium-ion battery charging and discharging switch

5V GATE TO SOURCE VOLTAGE MOSFET

Abstract: Marking G2 MARKING S1 IRF6156 g2 marking DIODE marking 23ab
Contextual Info: PD - 94592B IRF6156 Ultra Low RSS on per Footprint Area l Low Thermal Resistance l Bi-Directional N-Channel Switch l Super Low Profile (<.8mm) l Available Tested on Tape & Reel l ESD Protection Diode † Description FlipFET Power MOSFET l VSS 20V RSS(on) max

EFC6611R

Contextual Info: Ordering number : ENA2291A EFC6611R N-Channel Power MOSFET 12V, 27A, 3.2mΩ, Dual EFCP http://onsemi.com Features • 2.5V drive  Protection diode in  Halogen free compliance  Common-drain type  2KV ESD HBM Applications  Lithium-ion battery charging and discharging switch

Contextual Info: Ordering number : ENA1123A EFC4618R-P N-Channel Power MOSFET http://onsemi.com 24V, 6A, 23mΩ, Single EFCP Features • • • • • 2.5V drive Best suited for LiB charging and discharging switch Common-drain type Protection diode in Halogen free compliance

Contextual Info: Ordering number : ENA2151A EFC6601R N-Channel Power MOSFET http://onsemi.com 24V, 13A, 11.5mΩ, Single EFCP Features • • • 2.5V drive Common-drain type 2KV ESD HBM • • Protection diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: Ordering number : ENA2180A EFC4621R Power MOSFET 24V, 9A, 18mΩ N-Channel Dual EFCP http://onsemi.com Features • 2.5V drive  Common-drain type  2KV ESD HBM  Protection diode in  Halogen free compliance Applications  Lithium-ion battery charging and discharging switch

Contextual Info: Ordering number : ENA2179A EFC4619R Power MOSFET 24V, 6A, 23mΩ N-Channel Dual EFCP http://onsemi.com Features • 2.5V drive  Common-drain type  2KV ESD HBM  Protection diode in  Halogen free compliance Applications  Lithium-ion battery charging and discharging switch

ltcfc

Abstract: LTC4416 LTC4416-1 Marking R2E r2c transistor R2C marking R2E SOT23 LTC4416EMS LTC4416IMS marking r2c
Contextual Info: LTC4416/LTC4416-1 36V, Low Loss Dual PowerPath Controllers for Large PFETs DESCRIPTIO FEATURES U Designed Specifically to Drive Large and Small QG PFETs • Very Low Loss Replacement for Power Supply OR’ing Diodes ■ Wide Operating Voltage Range: 3.6V to 36V

KYS 30-40

Abstract: BG5130R BCR108S FW-50
Contextual Info: BG5130R DUAL - N-Channel MOSFET Tetrode • Low noise gain controlled input 4 5 6 stages of UHF-and VHF - tuners 1 with 3V up to 5V supply voltage 2 3 • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance • Improved cross modulation at gain reduction

Contextual Info: 1N4448W FAST SWITCHING SURFACE MOUNT DIODE POWER SEMICONDUCTOR Features • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance E D SOD-123 A B Mechanical Data

MARKING ka2

Abstract: MARKING KA2 SOT-23
Contextual Info: MMBD4148 SURFACE MOUNT SWITCHING DIODE POWER SEMICONDUCTOR Features • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23 A B Mechanical Data •

1N4448W

Abstract: marking code K
Contextual Info: 1N4448W FAST SWITCHING SURFACE MOUNT DIODE Features • · · · Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance E D A B Mechanical Data · · · · · SOD-123 Case: SOD-123, Molded Plastic

Contextual Info: 1N4448W FAST SWITCHING SURFACE MOUNT DIODE Features Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance HEh I B Dim Min Max A 3.55 3.85 B 2.55 2.85 C 1.40 1.70 A B Mechanical Data

BG3140

Abstract: BG3140R VPS05604
Contextual Info: BG3140. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated gate protection diodes 3 1 VPS05604 • Low noise figure • High gain, high forward transadmittance

BG3130

Abstract: BG3130R VPS05604 3D SOT363
Contextual Info: BG3130. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stage for UHF and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 3 2 • Integrated gate protection diodes 1 VPS05604 • High AGC-range, low noise figure, high gain