G1062 Search Results

Contextual Info: テラヘルツ波発生・検出モジュール G10620 シリーズ テラヘルツ波用光伝導素子とテラヘルツ波用レンズの一体型モジュール •特長 ●発生・検出兼用モジュール テラヘルツ波の発生と検出が本モジュールで可能！

G10620

Abstract: LPRD1027J09 G1062 G10620-12 G10620-13 G1062012
Contextual Info: テラヘルツ波発生・検出モジュール G10620 シリーズ PRELIMINARY DATA テラヘルツ波用光伝導素子とテラヘルツ波用レンズの一体型モジュール •特長 SMAコネクタ ●発生・検出兼用モジュール テラヘルツ波の発生と検出が本モジュールで可能！

photoconductive

Abstract: G10620 G10620-12 10Thz G10620-11 G10620-13 G1062012 THZ Series THZ Series hamamatsu
Contextual Info: THz Antenna Modules Emission/Detection Module for THz Electromagnetic Wave G10620 Series PRELIMINARY DATA Integrated Module of Photoconductive Antenna Chip and Lens for THz Electromagnetic Wave FEATURES SMA connector Suitable for both emission and detection

C10535E

Abstract: C10943X MEI-1202 PA1702 TEA-1035
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

C10535E

Abstract: C10943X MEI-1202 PA1752 TEA-1035
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

S12641

Abstract: S12642-0404PA-50
Contextual Info: さらなる小型化で新たな用途が広がる 指先サイズの分光器 Vol. 03 23 R&D インタビュー 量子ホトニクス の世界 マイクロ分光器 C12666MA 4 超小型で5gという超軽量のマイクロ分光器 2014 が誕生しました。従来のミニ分光器と同等

ua1751

Contextual Info: DATA SHEET NEC f jtiPAI 751 MOS FIELD EFFECT POWER TRANSISTORS SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in: millimeter This pro d u ct is Dual N -C hannel M OS Field Ef­ fect T ra n s is to r d esigned for pow er m anagem ent

CI008

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTORS UPA1702 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE D E S C R IP T IO N P A C K A G E D IM E N S IO N S This pro d u ct is N-Channe> M OS Field Effect in: millimeter T ransistordesignedforD C /D C converters and power

omron 8567

Abstract: crouzet 88 810.1 AQH2223 equivalent OMRON 1230 opto 12VDC sf 249 crouzet 88 810.0 Automation Controls panasonic - elevator door controller manual seiko lcd m3214 crouzet 88 810.0 coto reed relay 2063
Contextual Info: ELECTROMECHANICAL Switches Basic / Snap Switches Cherry Electrical Products . . . . . . . . . . 1819, 1820, 1821 Mountain Switch . . . . . . . . . . Available at mouser.com Honeywell . . . . . . . . . . . . . . . . . . 1822, 1823, 1824 Omron . . . . . . . . . . . . . 1825, 1826, 1827, 1829, 1830

H10769A

Abstract: H10770A H7422
Contextual Info: NEWS 01 2010 SOLID STATE PRODUCTS PAGE 10 New silicon infrared enhanced photodiodes for scientific measurement and YAG laser monitoring SOLID STATE PRODUCTS CCD image sensors S11510 series PAGE 12 ELECTRON TUBE PRODUCTS Side-on PMT R9876, R11540 PAGE 25 SYSTEMS PRODUCTS

CHQ 1838

Abstract: CK 77- 94V-0 cam pinout tda 12011 nec mys 501 MYS 99 726 TDA 7786 crouzet 88 810.1 MYS 99 832 Dry Reed Relay DG Rohs alps 3889
Contextual Info: Electromechanical Switches Basic / Snap Switches Cherry.1583, 1584, 1585, 1586, 1587 Mountain

C10535E

Abstract: C10943X MEI-1202 PA1702 TEA-1035
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS µPA1702 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect in: millimeter Transistor designed for DC/DC converters and power 8 management applications of notebook computers.

C10535E

Abstract: C10943X MEI-1202 PA1752 TEA-1035
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS µPA1752 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is Dual N-Channel MOS Field Ef- in: millimeter fect Transistor designed for power management application of notebook computers, and Li-ion bat-

C10535J

Abstract: C10943X UPC1100 UPC1150 TEA-576
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

G1062

Abstract: C10535J C10943X UPC1100 UPC1150 TEM-521
Contextual Info: データ・シート MOS形電界効果パワートランジスタ MOS Field Effect Power Transistors µPA1750 デュアルＰチャネルパワーMOS FET スイッチング用 工業用 本製品はデュアルタイプのＰチャネル縦型パワーMOS FETで，オン抵抗特性が優れており，ノートパソコン等の各

C10535E

Abstract: C10943X MEI-1202 PA1751 TEA-1035
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS µPA1751 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is Dual N-Channel MOS Field Ef- in: millimeter fect Transistor designed for power management application of notebook computers, and Li-ion bat-

C10535E

Abstract: C10943X MEI-1202 PA1751 TEA-1035
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

S12642

Abstract: S12642-0404PA-50 L10941-01 S12642-0404PB-50 HAMAMATSU L9181
Contextual Info: 2014 02 COVER STORY PAGE 2 Life Photonics – Innovative Solutions for Global Challenges OPTO-SEMICONDUCTOR PRODUCTS PAGE 10 Maximise MPPC performance with new MPPC modules ELECTRON TUBE PRODUCTS PAGE 14 Flat panel type PMT with high collection efficiency, H12700

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTORS ¿ ¿ P A 1752 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in: millimeter This product is Dual N-Channei MOS Field Ef­ fect Transistor designed for power management