G1047 Search Results

KIRD1079E02

Abstract: SE-171 photodiode 1.0 Gbps 1.55 G10476
Contextual Info: PHOTODIODE InGaAs PIN photodiode with preamp G10476 series TO-46 package, 1.3/1.55 µm, 1.25 Gbps G10476 series is a family of high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode integrated with a high-speed preamp, allowing easy

G10477-21

Contextual Info: PHOTODIODE InGaAs PIN photodiode with preamp G10477 series Receptacle type, 1.3/1.55 µm, 1.25 Gbps G10477 series is a family of high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode and a high-speed preamp integrated in a receptacle module.

photodiode InGaAs NEP

Contextual Info: PHOTODIODE InGaAs PIN photodiode with preamp G10478 series Pigtail type, 1.3/1.55 µm, 1.25 Gbps G10478 series is a family of high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode and a high-speed preamp integrated in a pigtail module.

omron 8567

Abstract: crouzet 88 810.1 AQH2223 equivalent OMRON 1230 opto 12VDC sf 249 crouzet 88 810.0 Automation Controls panasonic - elevator door controller manual seiko lcd m3214 crouzet 88 810.0 coto reed relay 2063
Contextual Info: ELECTROMECHANICAL Switches Basic / Snap Switches Cherry Electrical Products . . . . . . . . . . 1819, 1820, 1821 Mountain Switch . . . . . . . . . . Available at mouser.com Honeywell . . . . . . . . . . . . . . . . . . 1822, 1823, 1824 Omron . . . . . . . . . . . . . 1825, 1826, 1827, 1829, 1830

IEI-1213

Abstract: MEI-1202 MF-1134 PA1700 A3350
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

DIODE BYW95

Abstract: BYW95 diode BYW95B BYW95 BYW95A BYW95C DIODE BYW95C
Contextual Info: Product specification Philips Semiconductors Fast soft-recovery controlled avalanche rectifiers BYW95 series FEATURES DESCRIPTION • Glass passivated Rugged glass SOD64 package, using a high temperature alloyed • High maximum operating temperature construction. This package is

CHQ 1838

Abstract: CK 77- 94V-0 cam pinout tda 12011 nec mys 501 MYS 99 726 TDA 7786 crouzet 88 810.1 MYS 99 832 Dry Reed Relay DG Rohs alps 3889
Contextual Info: Electromechanical Switches Basic / Snap Switches Cherry.1583, 1584, 1585, 1586, 1587 Mountain

MPA1700

Abstract: SOP8 Package
Contextual Info: DATA SHEET M F C / MOS FIELD EFFECT POWER TRANSISTOR _ ¿¿PA1700 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect Tran­ in millimeter sistor designed for DC/DC converter and power man­

G1038

Abstract: G1014 G1349 G-1010 G1347 G1259 G1114 G1010 G1152 G1281
Contextual Info: “Stay Connected with Heyco” Bushings, Grommets, Bumpers & Feet Heyco Rubber Grommets For Panels from .063˝ 1,6 mm to .125˝ (3,2 mm) Thick MOUNTING HOLE DIAMETER in. PART NO. DESCRIPTION A Inside Diameter in. mm. Black mm. PART DIMENSIONS B Head Diameter

IEI-1213

Abstract: MEI-1202 MF-1134 PA1700 uPA1700
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR µPA1700 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect Tran- in millimeter sistor designed for DC/DC converter and power management applications of note book computers.

Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR _j u P A 1 7 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect T ran­ in millimeter sistor designed for DC/DC converter and power man­