G1 8645 Search Results

CLR35

Contextual Info: WET AND FOIL TANTALUM CAPACITORS MIL-C-39006 Established Reliability Tantalum Capacitors to Military Specification MIL-C-39006 T N ACCORDANCE with military specification MIL-C-39006, capacitors are marked with the MIL part number M 39006/XX-XXXX rather than

maxim 8786

Abstract: maxim 8774 CLR25 CLR35 maxim 8731 sprague CLR27 clr37 ir 8707 M39006 CLR27 m39006-01 223
Contextual Info: A COM PANY M39006/01/02/03/04/09/16/17/21/22/25 Wet and Foil Tantalum C a p a cito rs OF W SPRAGUE Military/Established Reliability, MIL-C-39006 Qualified Styles CLR25, 27, 35, 37, 65, 69, 71, 73, 79, 81 STYLE, DOCUMENT/DETAIL SPEC Style CUR25, M39006/01 Style CLR27, M39006/02

G264

Abstract: HD66784 20BSA1 HD66777 74874 633-50 power supplay parts list Rx66 HC s304 pts 510
Contextual Info: HD66777 262,144-color, 132 x 272 dot Graphics Controller Driver for TFT LCD with Main/Sub Panel Simultaneous Drive REJxxxxxxx-xxxxZ Rev.1.00a-1 October.21.2003 • Index Description . 5

SSD1298

Abstract: MARKING S403 KVP45 MARKING S196 SSD1298Z sdc 606 KVP29 MARKING S410 marking S193 marking s186
Contextual Info: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1298 Advance Information 240 RGB x 320 TFT LCD Controller Driver integrated Power Circuit, Gate and Source Driver with built-in RAM This document contains information on a new product. Specifications and information herein are subject to change

s415 rf switch

Abstract: SE271 Peripheral interface 8155 notes download PD11-PD1 ED02H 66787 kvp 34 DIODE diode s453 DM 1265 Peripheral interface 8155 8085
Contextual Info: Preliminary HD66787 528-channel, One-chip Driver with 262,144-color Display RAM and Power Supply Circuit for Low-temperature Poli-Si TFT LTPS-TFT Panels with Incorporated Gate Drivers REJxxxxxxx-xxxx Rev.0.22 10 June, 2003 Description . 5

IRF6150

Abstract: IR 30 S2
Contextual Info: PD - 93943 PROVISIONAL IRF6150 HEXFET Power MOSFET l l l l l Ultra Low RSS on per Footprint Area Low Thermal Resistance Bi-Directional P-Channel Switch Super Low Profile (<.8mm) Available Tested on Tape & Reel VSS -20V RSS(on) max IS 0.036Ω@VGS1,2 = -4.5V -7.9A

IRF7474

Contextual Info: Preliminary Data Sheet No.PD60180-A IR3220 FULLY PROTECTED H-BRIDGE FOR D.C. MOTOR Product Summary Features • • • • • • • Over temperature shutdown Over current shutdown Inrush current limited by Soft-Start sequence E.S.D protection Status feedback

dc Motor soft start

Abstract: dc Motor foward reverse soft start IC FULLY PROTECTED MOSFET Schottky Diode 40V 5A bridge IR3220 IRF7413 MS-012AA
Contextual Info: Preliminary Data Sheet No.PD60180 IR3220 FULLY PROTECTED H-BRIDGE FOR D.C. MOTOR Product Summary Features • • • • • • • Over temperature shutdown Over current shutdown Inrush current limited by Soft-Start sequence E.S.D protection Status feedback

HX8352C

Abstract: hx8352
Contextual Info: DOC No. HX8352-C(T -DS ) HX8352-C(T) 240RGB x 432 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver Temporary version 01 April, 2010 HX8352-C(T) 240RGB x 432 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents

Himax

Abstract: KN20 hx8352
Contextual Info: DOC No. HX8352-C01(T -DS ) HX8352-C01(T) 240RGB x 432 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver Version 01 May, 2011 HX8352-C01(T) 240RGB x 432 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents May, 2011

9936 mosfet

Abstract: G1 8645
Contextual Info: IRF6150 PROVISIONAL Bi-Directional MOSFET Outline Dimension NOTES : 1. ALL DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES]. 2. CONTROLLING DIMENSION: [INCH]. 3.124 2X [.123] S1 S1 3. LET TER DES IGNAT ION: S2 S = SOURCE SK = SOURCE KELVIN G = GAT E IS = CURRENT SENSE

ir 249A

Abstract: GA200TD120U W80S
Contextual Info: PD - 50061C GA200TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

GA150TS60U

Contextual Info: PD -50056C GA150TS60U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

HX8678

Abstract: HX8677 ka 20885 D Himax
Contextual Info: DOC No. HX8262-A-DS HX8262-A 1200 CH TFT LCD Source Driver with TCON Preliminary version 00 December, 2007 HX8262-A 1200/1026 CH TFT LCD Source Driver with TCON Preliminary Version 00 November, 2007 1. General Description HX8262-A is a 1200 channel outputs source driver with TCON, and 3-wire Serial Port

80C196KC user manual

Abstract: EN80C196KC20 EG80C196 EN80C196 tN80C196KC20 en80c196kc MC0893 8XC196KC user manual ee80c196kc20 80C196KC instruction set
Contextual Info: 8XC196KC/8XC196KC20 COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER Y Y 87C196KC-16 Kbytes of On-Chip OTPROM 83C196KC-16 Kbytes ROM 80C196KC-ROMless Y Dynamically Configurable 8-Bit or 16 and 20 MHz Available 16-Bit Buswidth 488 Byte Register RAM Y Full Duplex Serial Port

4.5v to 100v input regulator

Contextual Info: PD -94030 IRF7752 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel VDSS 30V RDS(on) max ID 0.030@VGS = 10V 4.6A 0.036@VGS = 4.5V 3.9A Description HEXFET® power MOSFETs from International Rectifier

EIA-541

Abstract: IRF7751 TSSOP-8 footprint 7702 ST irf 146
Contextual Info: PD - 94002 IRF7751 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -30V 35mΩ@VGS = -10V 55mΩ@VGS = -4.5V -4.5A -3.8A Description HEXFET® power MOSFETs from International Rectifier

Contextual Info: PD -93995 IRF7755 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -20V 51mΩ@VGS = -4.5V 86mΩ@VGS = -2.5V -3.7A -2.8A Description HEXFET® Power MOSFETs from International Rectifier

dinverter 768r

Abstract: G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

GA100TS120U

Contextual Info: PD - 50060B GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

GA400TD60U

Contextual Info: PD - 50059C GA400TD60U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

IRF7328

Contextual Info: PD -94000 IRF7328 HEXFET Power MOSFET ● ● ● ● Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Available in Tape & Reel VDSS -30V RDS on max ID 21mΩ@VGS = -10V -8.0A 32mΩ@VGS = -4.5V -6.8A Description New trench HEXFET® Power MOSFETs from

1515G

Abstract: GA250TD120U
Contextual Info: PD - 50054A GA250TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses

GA75TS120U

Contextual Info: PD - 50062A GA75TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses