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    G05N60D Search Results

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    Contextual Info: MOTOROLA Order this document by G05N60D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet G05N60D Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This IGBT contains a b uilt-in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in


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    05n60

    Abstract: G05N60D
    Contextual Info: MOTOROLA O rder this docum ent by M M G 05N60D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet G05N60D Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate T his IG BT con tain s a b u ilt-in free w h ee lin g diod e and a gate


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    05N60D/D 05n60 G05N60D PDF