G05N60D Search Results

Contextual Info: MOTOROLA Order this document by G05N60D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet G05N60D Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This IGBT contains a b uilt-in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in

05n60

Abstract: G05N60D
Contextual Info: MOTOROLA O rder this docum ent by M M G 05N60D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet G05N60D Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate T his IG BT con tain s a b u ilt-in free w h ee lin g diod e and a gate