G017121 Search Results

Contextual Info: 32E D • Ô53b320 □ 01711=1 1 ■ SIP BSP 297 SIPMOS N Channel MOSFET SIEMENS/ SPCLi SEMICONDS T - M - O S * • SIPMOS - enhancement mode • Drain-source voltage Vis = 200V • Continuous drain current l 0 - 0.6A • Drain-source on-resistance fWon> = 2 .0 0

2SK981

Abstract: 2SK981A
Contextual Info: P o w e r F-MOS FET 2SK981, 2SK 981A 2SK981, 2SK981A Silicon N-channel Power F-MOS FET P ackage Dim ensions • Features • Low ON resistan ce R Ds on : RDs (on) = 2. Oil (typ.) Unit: mm • High sw itching ra te : tt = 40ns (typ.) 3.7m ax 7.3max. • No secondary breakdow n