G-LINK TECHNOLOGY Search Results

GLT5640L32

Abstract: GLT5640L32-5 G-Link
Contextual Info: G-LINK ADVANCED GLT5640L32 CMOS Synchronous DRAM 2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM G-Link Technology Corporation G-Link Technology Corporation,Taiwan 6F, No. 24-2, Industry E. RD. IV, Science Based Industrial Park, Hsin Chu, Taiwan. G-Link Technology Corporation

2SM33

Contextual Info: DATASHEET PM PM C-1990263 ISSUE 4 PMC-Sierra, Inc. PM7381 FREEDM-32A672 32 LINK, 672 CHANNEL F R A M E EN G IN E A N D DATA LINK M A NA G ER W ITH ANY-PHY PACKET IN TE R FA C E PM7381 FREEDM -32A672 32 LINK, 672 CHANNEL FRAME ENGINE AND DATALINK MANAGER WITH

RP250X6.000-DAP PS RW SS

Contextual Info: * / I Tex a s In s t r u m e n t s DS90UB901Q/DS90UB902Q 10 - 43MHz 14 Bit Color FPD-Link III Serializer and Deserializer with Bidirectional Control Channel G eneral Description The DS90UB901Q/DS90UB902Q chipset offers a FPD-Link III interface with a high-speed forward channel and a bidirec­

SNLA131

Contextual Info: J t / l Te x a s ” In s t r u m e n t s DS90UB903Q/DS90UB904Q 10 - 43MHz 18 Bit Color FPD-Link III Serializer and Deserializer with Bidirectional Control Channel G eneral Description The DS90UB903Q/DS90UB904Q chipset offers a FPD-Link III interface with a high-speed forward channel and a bidirec­

Contextual Info: G -LINK GLT441L04 1M X 4 CMOS DYNAMIC RAM WITH FAST PAGE MODE Nov. 2001 Rev. 1.0 Features : Description : ∗ ∗ ∗ ∗ The GLT441L04 is a high-performance CMOS dynamic random access memory containing 4,194,304 bits organized in a x4 configuration. The GLT4161L04 has 10 row

100L08

Abstract: GLT710008 8X13
Contextual Info: G -LINK GLT6100L08 Ultra Low Power 128k x 8 CMOS SRAM Nov 2000 Rev. 02 Features : Description : ∗ The GLT6100L08 is a low power CMOS Static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW CE1 Low-power consumption.

GLT4160L04

Abstract: GLT4160L04-40J3 GLT4160L04-50J3 GLT4160L04-60J3 GLT4160L04-70J3 GLT4160L04E-40J3 GLT4160L04E-50J3 GLT4160L04E-60J3 GLT4160L04E-70J3 GLT4160L04S-40J3
Contextual Info: G -LINK GLT4160L04 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT May 2001 Rev.3.1 Features : Description : ∗ ∗ ∗ ∗ The GLT4160L04 is a high-performance CMOS dynamic random access memory containing 16,777,216 bits organized in a x4 configuration. The GLT4160L04 offers page

Contextual Info: G -LINK GLT6100L16 Ultra Low Power 64k x 16 CMOS SRAM May 2000 Rev. 0.3 Features : Description : ∗ The GLT6100L16 is a low power CMOS Static RAM organized as 65,536 words by 16 bits. Easy memory expansion is provided by an active LOW CE Low-power consumption.

130mA

Contextual Info: G -LINK GLT441L08 512K X 8 CMOS DYNAMIC RAM WITH FAST PAGE MODE Oct 2001 Rev. 1.0 Features : Description : ∗ ∗ ∗ ∗ Fast access time and cycle time. Low power dissipation. ∗ ∗ ∗ ∗ CAS -Before-RAS Refresh, Hidden Refresh and Test Mode Capability.

GLT4160M16-60TC

Contextual Info: G -LINK GLT4160M16 1M X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Dec 2001 Rev.1.1 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT4160M16 is a 1,048,576 x 16 bit high-performance CMOS dynamic random access memory. The GLT4160M16 offers Fast Page mode with Extended Data Output,

MT8978

Contextual Info: MT8978 CEPT PCM 30 Framer Circuit ISO-CMOS ST-BUS" FAMILY MITEL* 9161-002-012-NA ISSUE 8 Features • • • • • • • • • • • • • Compatible with CCITT Recommendation G.732 ST-BUS compatible Interface to bidirectional 2048 kbit/s CEPT link

GLT41116-35J4

Abstract: GLT710008
Contextual Info: G -LINK GLT41116 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE May 1998 Rev 2 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41116 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41116 offers Fast Page mode ,and has both BYTE WRITE and

GLT41016-30J4

Abstract: EDO Corporation 64k dynamic RAM
Contextual Info: G -LINK GLT41016 64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Dec 1998 Rev 2.1 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41016 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41016 offers Fast Page mode with Extended Data Output, and has

GLT41316-40J4

Contextual Info: G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 Rev 2 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41316 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41316 offers Fast Page mode ,and has both BYTE WRITE and

Contextual Info: CATV Modem Part numbers link to product information External BPF Receiver Nominal Frequency: 70 MHz–1 GHz AGC Detector E Optional Detector G 1st Mixer Diplexer Cable A AGC Amp B L. O. VCO Switch IF Amp Mixer Tunable PLL C Logic Out to TV, PC Pin 1 QAM Receiver

cd 7377

Abstract: mit 5233 80C300 C0ST10 FZL 111 buss2
Contextual Info: Full Duplex 80C300 HURWOUC” Technology, Incorporated Full Duplex C M O S Ethernet 10/100 Mega Bit/Sec Data Link Controller Preliminary June 1995 Features • L o w P o w e r CMOS T e c h n o lo g y ■ 10/100 M B it E th e rn e t C o n tro lle r O p tim iz e d fo r

Contextual Info: 3.3V CMOS SINGLE INVERTER GATE WITH 5 VOLT TOLERANT I/O J m ï ï ., D E S C R IP TIO N : FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 0.65mm pitch PSOP package Extended commercial range of - 40°C to +85°C

Contextual Info: 3.3V CMOS SINGLE 2-INPUT POSITIVEAND GATE FE A T U R E S : IDT74ALVC1G08 ADVANCE INFORMATION D E S C R IP T IO N : - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 - 0.65mm pitch PSOP package

Contextual Info: 3.3V CMOS SINGLE INVERTER GATE WITH 5 VOLT TOLERANT I/O D E S C R IP TIO N : FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MlL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 0.65mm pitch PSOP package Extended commercial range of - 40°C to +85°C

Contextual Info: 3.3V CMOS SINGLE INVERTER GATE WITH 5 VOLT TOLERANT I/O J m ïï., D E S C R IP TIO N : FE A T U R E S : - 0.5 MICRON CMOS Technology ESD > 2000V per MlL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 0.65mm pitch PSOP package Extended commercial range of - 40°C to +85°C

MO40

Abstract: PT4152 EPE6047S 10BASET 83C95 83C96 A553-1084-01
Contextual Info: 83C96 SEEQ 10BASE-T Ethernet Transceiver With On Chip Filters and Digital Interface Technology, Incorporated O ctob e r 1994 P R E LIM INA R Y Description SEEQ AutoDUPLEX Designation The 83C 96 is a hig h ly integ ra te d ana lo g interface 1C for tw isted p a ir Eth e rn et a pplications 1 OBASET .

1g125

Abstract: IDT74ALVC1G125 IDT74LVC1G79A IDT74ALVC1G04
Contextual Info: IDT74ALVC1G125 3.3V CMOS SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUT EXTENDED COMMERCIAL TEMPERATURE RANGE IDT74ALVC1G125 ADVANCE INFORMATION 3.3V CMOS SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES: DESCRIPTION: – – 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015;

ALVC1G14

Abstract: IDT74ALVC1G14 DSC-4719 IDT74LVC1G79A 1G14 IDT74ALVC1G04
Contextual Info: IDT74ALVC1G14 3.3V CMOS SINGLE SCHMITT-TRIGGER INVERTER EXTENDED COMMERCIAL TEMPERATURE RANGE IDT74ALVC1G14 ADVANCE INFORMATION 3.3V CMOS SINGLE SCHMITTTRIGGER INVERTER FEATURES: DESCRIPTION: – – 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015;

IDT74ALVC1G04

Abstract: IDT74ALVC1G06 IDT74LVC1G79A PicoGate
Contextual Info: IDT74ALVC1G06 3.3V CMOS SINGLE GATE INVERTER BUFFER/DRIVER EXTENDED COMMERCIAL TEMPERATURE RANGE IDT74ALVC1G06 ADVANCE INFORMATION 3.3V CMOS SINGLE GATE INVERTER BUFFER/DRIVER WITH OPEN DRAIN OUTPUT FEATURES: DESCRIPTION: – – 0.5 MICRON CMOS Technology