G T 3H Search Results

Contextual Info: TC74HC08AP/AF/AFN QU AD 2-INPUT AND GATE T he TC74HC08A is a high speed CMOS 2 -IN P U T A ND G A T E fa b ric ate d w ith silicon g ate C2MOS technology. It achieves th e high speed operatio n s im ila r to eq u iv alen t L S T T L w hile m ain ta in in g the CMOS low pow er

2MN1

Abstract: L126
Contextual Info: CATALOG MICRO SWITCH FED. M F G . CODE 1L S 1- SWITCH “ ENCLOSED a Honeywell Division L I S T I N G L FREE n — €i O P E R A T IN G P O S IT IO N P O S IT IO N O P E R A T IN G P O S IT IO N 91929 O P E R A T IN G H E A D M O U N TS IN A N Y OF FOUR P O S IT IO N S

Scans-0017401

Abstract: 32L7GT 32L7-GT
Contextual Info: 32L7GT TUNG-SOL RE C TIFIER BEAM POWER AM PLIFIER UN I P O T E N T I A L C A T H O D E S T-9 2 + MAX HEATER 3* 3 2 .5 MA X VOLTS 0 .3 AMPERE AC OR DC G L A S S BUL B 8 PIN TH E T U N G -S O L IN A S I N G L E BULB. A M P LIFIE R VOLTAGE CONTROL PLATE IS DESIG N ED

A302 w3

Abstract: aa z8b
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC514410J/Z-80» TC514410J/Z-10 DESCRIPTION’ The TC514410J/Z i s th e new g e n e r a t i o n dynamic RAM o r g a n i z e d 1 , 0 4 8 , 5 7 6 w ords by 4 b its. The TC514410J/Z u t i l i z e s TOSHIBA'S CMOS S i l i c o n g a t e p r o c e s s t e c h n o l o g y a s

PA239N

Abstract: PA239
Contextual Info: Signetics Integrated Circuits - Consumer C O N N E C T IO N D IA G R A M PA239N G E N E R A L D E S C R IP T IO N T h e P A 2 3 9 is a d u a l lo w n o ise p r e a m p lifie r fe a t u rin g t w o id e n t ic a lly -m a t c h e d 6 8 d B ga in a m p lifie r s fe d f r o m a n in ­

super bonder 325

Abstract: ls40f
Contextual Info: EC1840 4 0 G H z LOW N O I SE FET G a A s F I E L D E F F E C T T R A N S I S T O R NOT FOR NEW DESIGNS. USE EC2827 REPLACEMENT. FEATURES • Low noise figure : N F min = 1.5dB typ. at 18GHz N F min. = 3dB (typ.) at 40GHz • High associated gain : G a = 11.5dB (typ.) at 18GHz

tak 2

Abstract: ScansU9X23
Contextual Info: 18 TUNGSRAM RADIO Type T A K 2 — O k t o d e D ie R öh re T A K 2 ist d ie g e e ig n e tste M is c h rö h r e für d ie O sz illa t o r -M o d u la to r s t u fe vo n m o ­ dern en Ü b e r la g e r u n g s -A p p a r a t e n . S ie sichert eine sta b ile O sz illa tio n hinunter bis zu einem

MSM80C86A-10RS -7

Contextual Info: O K I semiconductor MSM80C86A-1ORS/GS/JS 16-BIT CMOS MICROPROCESSOR G E N ER A L DESCRIPTIO N T h e M S M 8 0 C 8 6 A - 1 0 a re c o m p le t e 1 6 - b i t C P U s im p l e m e n t e d in S i li c o n G a te C M O S t e c h n o l o g y . T h e y a re d e s ig n e d w i t h s a m e p r o c e s s in g s p e e d as t h e N M O S 8 0 8 6 - 1 b u t h a v e c o n s id e r a b ly le ss p o w e r

Contextual Info: FEATURES • 100-1000 MHz ^ 3 • 25 mA @ +5 VDC ■ 30 mA @ - 5.2 VDC ■ 38 Pin Flatpack t e PIN Diode SP6T GND 38 RF1 G N P 37 36 GND 35 R F2 34 GND CONT CONTCONT GND 1 2 3 "0“ 3 MODEL NO. DSW68034 " 0" TYPICAL PERFORMANCE SP6T G N D G N D R F3 G N D G N D G N D R F4 G N D G N D RF5 G N D G N D

359RGA

Abstract: SM6J45 SM6D45 SM6D45A SM6G45 SM6G45A SM6J45A 4a2d
Contextual Info: - SM6 D, G, Jj45 TT-6 • 139 - * 2 I 3 - I OG I A c fo r n a i 6 A, 200 Y 600 V ( L , = 25 °C ) n S lt t f t t t O T O - 220 A B / ' y * r — :J le I drm Vt m S M 6 D 45 S M 6 G 45 S M 6 J 45 200 400 600 V d sm m T j — 125 ”C , 60 ( 50 H z, I 2 ■t

G8UN

Contextual Info: JXA MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS J X ASERIES j x 105oC i g - < > t o— § f> X n np 105°C Low impedance. £ FEATURES Low im pedance a t 100kHz w ith se lected m a te ria ls. SPECIFICATIONS H i •»gil Item s —5 5 ~ + 105°C Operati! g T>jn pi-r.j,.i.ri: lijriyu

TC74HC623

Abstract: TC74HC623AP tc74HC620AP
Contextual Info: II /TC74HC620AP/AF TC74HC623AP/AF O C T A L BUS T R A N S C E I V E R TC 74H C 62 0AP /A F 3 - S T A T E . IN V E R T I N G TC 7 4H C62 3AP /A F 3-ST A TE . N O N -IN V E R T IN G T h e TC74HC620A a n d TC74HC623A a r e high speed CMOS Q U A D T R A N S C E I V E R f a b ric a te d with silicon

Contextual Info: M etal-glazed Trim m er Potentiom eters VM5CK-PV MOUNTING HOLE DIMENSIONS ON P C B REFERENCE! VM5CK-PV 0 . 5 x 0 .5 *1 H R o t a tio n a l A n g le 200±20‘ R o t lt io a a l T o r q u e 2 - 2 0 m N •m | 2 0 - 2 0 4 g f ■c m } A e a ls ta n o e R a n g n

R88D-KN04H-ECT

Abstract: R88D-KN R88D-KT01H R88D-KT04H R88M-K20030H-S2 R88M-K servomotor Omron R88M R88M-K75030 R88D-KN02H-ECT R88MK-2K030HS2
Contextual Info: Accurax G5 Servo System Extreme mechatronics meets -Stream Automation » »S u b m i c ro n p re c i s i o n a n d m s s e t t l i n g t i m e » »M o t i o n n e t w o r k a n d s a fe ty b u i l t- i n » » D o u b l e re g i s t ra t i o n a n d f u l l c l o s e d l o o p

Contextual Info: | TAIWAN LITON ELECTRONIC 4^E D I S L I T E M i'I FEATURES • 0 .3 IN C H • C H O IC E 7 .6 2 m m OF M A T R IX THREE H E IG H T . B R IG H T G R E E N /H IG H E F F IC IE N C Y C O L O R S -R E D / RED. • H IG H B R IG H T N E S S . • S IN G L E

TFK U 3212 M

Abstract: TFK U 3212 telefunken rc 890 cd LIN 5642 G tfk 623 ta 8659 cn str f 6268 cd 3313 eo PEX 8603 ORP 12
Contextual Info: Tem ic Sales Offices S e m i c o n d u c t o r s Addresses Europe Denmark T E M IC D ansk c /o A E G Industri A/S R oskildevej 8 -1 0 2 620 A lbeitslund Tel: 45 4 2 6485 22 Fax: 45 43 6262 28 T E M IC T E L E F U N K E N m icro ­ electro n ic G m bH K ruppstrasse 6

Contextual Info: i:WNp J READ INTERFACE CHAPTER 8 d t I n t e g r a t e d D € v iz e T e c h n o lo g y , l i e . INTRODUCTION The R3041 read protocol h a s b een designed to interface to a wide variety of m em ory a n d I/O devices. P articu lar care h a s b e e n ta k e n in th e definition of

la 4508 ic pin diagram

Abstract: la 4508 ic diagram LM 4747
Contextual Info: TOKO 1C Data Sheet Inc. TK716xx TK716XXS V O L T A G E R E G U L A T O R W ITH ON/OFF S W IT C H FEATURES Available battery back-up. Internal Reverse Bias Protection High Precision output Voltage ±2% or ±60mV Standard device (±1% or ±40mV) High grade device

Contextual Info: ^PU R PLE 1. 81 TG P U R P L E LED & 2. & f t ^ 3. m 3ä 4. jg&flftjCi&fe G aN l'L E D m* T ^ 2 m ^ >1 * 5t IE ü m m /•v^j^isrisifc ft f& G £ 1) ^ IrI m ^ ?A # a fäffiiEÄ 2 5 — (a 2 ) '$i 2 5 ^ F a i -0. f ^ opr « T s t£ m A m A 1 0 0 I R £ m A

ffe tdk

Abstract: MA-307-26
Contextual Info: / M lf e ï Ë t t g Power-Saving, Non-Current, High-Retentivity Miniature Electromagnetic Plungers jfiJSRoHSJB^ SÎtëZRoHSifr$-:£àMafiEUDirective2002/95/EC, Series Tm® & w % xinpm m m , à$fE&ÌIIlM ^W jSZ a, im & m an m « i/ 3H»ìtè§iJo Bji^aiT f

Contextual Info: TAIWAN LITON ELECTRONIC u tem î 4TE D 0835^5 D003531 T37 • T L I T 5mm CYLINDRICAL LED LAMPS L T L -2 2 1 4 R T / 2214WC B R IG H T RED L T L -2 2 34 G T / 2234WC GREEN LTL-2254Y T7 2254WC Y E LLO W LTL-2224R T H IG H E F FIC IE N C Y RED LTL-2294W C O RANG E

SB3317-G

Contextual Info: SB3317-G / SB3317-G B Semiconductor High Brightness LED Lamp Features • Colorless transparency lens type • φ3mm(T-1) all plastic mold type • Super luminosity Outline Dimensions unit : STRAIGHT TYPE mm STOPPER TYPE 3.0±0.2 3.0±0.2 5.3±0.2 5.3±0.2

SB3317E-G

Contextual Info: SB3317E-G / SB3317E-G B Semiconductor High Brightness LED Lamp Features • Colorless transparency lens type • φ3mm(T-1) all plastic mold type • Super luminosity • E ; ESD Protected (±2.0KV, 3 times @100pF, 1.5KΩ) Outline Dimensions unit : mm STRAIGHT TYPE

SANYO marking kf

Abstract: S1U MARKING 2SC3772 VCB5167 marking Sanyo
Contextual Info: S A N Y O S E M I C O N D U C T O R C O R P E S E D 7 1 e l 7 7 t G b 2 7 f i T-3H7 2SC3772 NPN Epitaxial Planar Silicon Transistor 2018A UHF OSC, MIX, Low-Noise Wide-Band Amp Applications 1945B Applications . UHF frequency converters, local oscillators, low-noise amplifiers, wide-band