G S TECHNOLOGY Search Results

transistor f423

Abstract: sgsf323
Contextual Info: 7qgqg37 o o s g is q ^ T * 3 M S SGSF323/IF323 SGSF423/IF423 S G S -T H O M S O N !D=D S G S-THOMSON 30E P FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS • HIG H S W ITC H IN G SPEED NPN POWER TRANSISTORS ■ HOLLOW EMITTER TECHNOLOGY ■ FOR FAST SWITCHING ■ HIGH VOLTAGE FOR OFF-LINE APPLICA­

RETU 3.02

Abstract: OT363 K2280
Contextual Info: S IE M E N S BGA425 S i - M M I C - A m p lif ie r in SIEGET 25-Technology Preliminary Data # Multifunctional Case. 50 Q Block LNA/MIX # Unconditionally stable # G a in [s ^ f^ S .S d B at 1.8 G H z (appl.1) G ain [Saif =22 d B at 1.8 G H z (appl.2) IP3out = +7 dBm at 1.8 G H z (VD=3V,lD=9.5mA)

smps 1000W

Abstract: smps 2000W 2000w smps smps 2000W circuit 1000w smps circuits smps design 1000w 1000W mosfet SGSF663 npn 1000V 100a smps 1000w circuit
Contextual Info: 7T2‘Ï237 002122=1 ô • "T'-iV/' S G S -T H O M S O N S G S F 663 HLHOTTRMOlSi S 6 S-TH0MS0N 30E » FASTSWITCH HOLLOW-EMITTER NPN TRANSISTOR ■ HIG H S W IT C H IN G SPEED NPN POWER TRANSISTOR . HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR OFF-LINE APPLIC A­

SGSF32

Abstract: transistor f421 F421 Transistor
Contextual Info: 7 T 2 T B 3 7 o o a ' î i s a i m SGSF321/IF321 SGSF421/IF421 SGS-THOMSON [i$ 0 g ^ ( 5 i[ L [ i( g T O ( M ( g S S G S-THOMSON 3GE » FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS • HIG H SW IT C H IN G SPEED NPN PO W ER ­ TRANSISTORS ■ HOLLOW EMITTER TECHNOLOGY

74LS

Contextual Info: G 74S C 240 G 74SC241 G 74SC 244 G 74SC540 G 74S C 541 IS O C M O S T h re e -S ta te O cta l B u ffe rs /L in e D rivers S - 31 ôcic^ 00 2559 IS t f C rT t Features • Equivalent to 74LS ' series • Low pow er ISO-CMOS technology • S hort propagation delay

Contextual Info: Assembly technology Assembly Technology Development S E IK O E P S O N 'S s y s te m a tic Development flow d e v e lo p m e n t p ro g r a m g e ts e x tra m ile a g e fr o m your p ro du ct design. You can bring your p ro d u ct sp ecification s to o u r e n g in e e r in g

402Z

Abstract: BD-PCMCIA1149 G.728 simulation lsi SoC BD-PCI1149 LSI402ZX LSI403LP ZSP400 CW003
Contextual Info: Z S P To o l s a n d S o f t w a r e Reference Guide 12 A 8m M s SM R ta ,E i (H FR l V. R , ) 32 FR bi ) G .7 11 G .7 23 G .1 .7 26 G .7 27 G .7 28 G .7 29 V G .1 aria 68 nt s (8 G SM t o G C O M PA N Y T. s, V 38 .4 Fa 2, V. Ac x ou Re 42b s la is y M tic

Contextual Info: 7 T 2 ‘Ï 2 3 7 002122=1 ô • " T ' - i V / ' S G S -T H O M S O N S G S F 663 HLHOTTRMOlSi S 6 S-TH0MS0N 30E » FASTSWITCH HOLLOW-EMITTER NPN TRANSISTOR ■ HIG H S W IT C H IN G SPEED NPN POWER TRANSISTOR . HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR OFF-LINE APPLIC A­

fdk vco 004

Abstract: 14L4 16L2 16L8 16R8 GAL16V8 GAL16V8S PDIP20 PLCC20 64X32
Contextual Info: SbE » • 7^237 S G S -1 H O M S O N DOMSIMT 73T ■ SGTH s 6 s-T H o n so N I[L J « M 0 g S G A L I 6 V 8 S T -H é -n -0 7 E2PR0M CMOS PROGRAMMABLE LOGIC DEVICE HIGH PERFORMANCE SGS-THOMSON SINGLE-POLY E2PROM CMOS TECHNOLOGY - 20ns maximum propagation delay

X44H

Abstract: 16JL RP5GH05
Contextual Info: Ito« No. 86-01 1-1-1986 CMOS Gate Array 5GH Series •GENERAL DESCRIPTION ■FEATURES R P 5 G H 0 5 / 1 0 / 1 6 / 2 3 / 2 9 / 3 8 / 5 5 a re g a te a r r a y L S I s by using 2 fim s ilic o n g a te C - M O S technology. It is p o s s ib le to develop L S I by u ti l i z i n g the fu lly C A D

220v 2a transistor

Abstract: smps 1500W 250V transistor npn 2a SGSF665 transistor npn 100khz collector voltage 5v transistor npn high speed switching
Contextual Info: f Z 7 S 5 ^7# C S - T H O M [ L t K S g T M O N K S S G S F 6 6 5 FASTSWITCH HOLLOW-EMITTER NPN TRANSISTOR • H IG H S W IT C H IN G 'S P E E D N P N P O W E R TRANSISTOR ■ HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR OFF-LINE APPLICA­ TIONS ■ 50kHz SW ITCHING SPEED

G7XX

Abstract: HDB3 E2 txc-21037 G-745 G753 G7421
Contextual Info: E2/E3F Device 8-, 34-Mbit/s Framer TXC-03701B DATA SHEET FEATURES DESCRIPTION • Framer for ITU-TSS Recommendations: - G.742 8448 kbit/s - G.745 (8448 kbit/s) - G.751 (34368 kbit/s) - G.753 (34368 kbit/s) The E2/E3 Framer (E2/E3F) is a CMOS VLSI device

Contextual Info: PEEL 22CV8 -5/-7/-10/-25 CMOS Programmable Electrically Erasable Logic Device Features • High Speed, Low Power ■ - PALs and G A L s ■ CMOS Electrically Erasable Technology - S u p e rio r fa c to ry te s tin g - R e p ro g ra m m a b le in p la s tic p a c k a g e

Contextual Info: V^L S I TECHNOLOGY INC bDE V L S I T e c h n o lo g y in c. D • T3flfl347 000R5S3 flSfl * V T I -t~ is -p VP15323TSPP TRIPLE SONET STS PAYLOAD PROCESSOR DESIGNER'S GUIDE August 1992 V L S I TECHNOLOGY INC bDE ]> ■ ^360347 G G G C] 2 2 4 7=14 ■ VTI Ü P V L S I T e c h n o l o g y , in c .

MT41LC256K32D4

Contextual Info: PR EL IM IN AR Y MICRON I MT41LC256K32D4 S 2 56K x 32 S G R A M TECHNOLOGY, INC. SYNCHRONOUS G R A P H I C S RAM 256K x 32 S G R A M PULSED RAS#, DUAL BANK, PIPELINED, 3.3V OPERATION FEATURES * Fully synchronous; all signals registered on positive edge of system clock

Contextual Info: E2/E3F Device 8-, 34-Mbit/s Framer TXC-03701B DATA SHEET FEATURES DESCRIPTION • Framer for ITU-TSS Recommendations: - G.742 8448 kbit/s - G.745 (8448 kbit/s) - G.751 (34368 kbit/s) - G.753 (34368 kbit/s) The E2/E3 Framer (E2/E3F) is a CMOS VLSI device

g742

Abstract: tsu56
Contextual Info: BACK E2/E3F Device 8-, 34-Mbit/s Framer TXC-03701B DATA SHEET FEATURES DESCRIPTION • Framer for ITU-TSS Recommendations: - G.742 8448 kbit/s - G.745 (8448 kbit/s) - G.751 (34368 kbit/s) - G.753 (34368 kbit/s) The E2/E3 Framer (E2/E3F) is a CMOS VLSI device

Contextual Info: V TC74HC4094AP/AF/AFN 8 -B IT S H IF T A N D STORE RE G I S T E R 3 ~ S T A T E The TC74HC4094A is a high speed 8 - B I T S H IF T AND S T O R E R E G I S T E R fab ricated with silicon g ate C2 MOS technology. It achieves the high speed operation s im ila r to

Contextual Info: GPS Antenna G P S L 1 S u r v e y A n t e nn a P /N : E G P S - L 1 S A American Accurate Components, Inc. G P S L 1 / L 2 S u r v e y A n te n n a P/N: EGPS-L1L2SA 188 Technology Drive, Unit H, Irvine, CA 92618 Tel: 949-453-9888 Fax: 949-453-8889 Email: sales@aacix.com

Contextual Info: SbE » • 7T2T237 GDMG217 225 ■ S G T H / T 7 S G S - T H O M S O N M 54H C 423 ^ 7 # RiflD g[S IILI Tr^®lS!ID©i S ^ -y-51-J M 74HC423 G S - T HOt l S ON DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATORS ■ HIGH SPEED tPD= 28 ns (TYP at VCc = 5V ■ LOW POWER DISSIPATION

48Z08

Abstract: MK48Z09 FFD 443
Contextual Info: • [ Z 7 ^ 5 3 7 p o s a g li g ■ T - q k ^ v r Z - _ S G S - T H O M S O N M K 4 8 Z 0 8 / 1 8/ 09 /19 B [ ^ D » i [ L i » i D ( g S _ -55/70/10/15/20 I S G S-TH0MS0N IDE » 8 K X 8 ZEROPOWER SRAM FEATURES ■ INTEGRATED ULTRA LOW POWER SRAM,

LT 672

Abstract: yf7a 2SK1195 F1E23 L200
Contextual Info: S M D M *> U -X yt^-MOSFET SURFACE MOUNTING TECHNOLOGY DEVICE • S S O U T L IN E D IM E N S IO N S 2SK1195 F 1 E 2 3 2 3 0 V 1.5A ■ R A TIN G S A b s o lu te M axim u m R a tin g s m a ft IE -¥■ Sym bol Ite m S to r a g e T e m p e ra tu r e T stg

57RA

Contextual Info: s = 7 S G S -T H O M S O N ^ 7# K l g K L iM ( s iO ( g S B U LT118D HIGH VOLTAGE FAST-SWITCHING _ NPN POWER TRANSISTOR PRELIMINARY DATA . . . . . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS

Contextual Info: SbE J> m Æ T “ •/#« 7 T2 e1237 G G M D i n 117 M S G T H T ~ H 5 - Z 3 -3 ? S G S - 1 H 0 M S 0 N BOœ lllLa gîMnÊi M54/74HC292 M54/74HC294 S 6 S-THOMSON PROGRAMMABLE DIVIDER/TIMER ■ LOW POWER DISSIPATION lCc = 4 iiA (MAX. at TA = 25°C ■ HIGH NOISE IMMUNITY