G S TECHNOLOGY Search Results

Contextual Info: PEEL 22CV8 -5/-7/-10/-25 CMOS Programmable Electrically Erasable Logic Device Features • High Speed, Low Power ■ - PALs and G A L s ■ CMOS Electrically Erasable Technology - S u p e rio r fa c to ry te s tin g - R e p ro g ra m m a b le in p la s tic p a c k a g e

smd code Hall

Abstract: Hallgenerator K402 siemens magnetic sensors diagram induction INDUCTION CIRCUIT DIAGRAMS LT 4905 magnetic field sensor siemens AED01246 AED01249
Contextual Info: S IE M E N S Semiconductor Sensors Uni- and Bipolar Hall 1C Switches for Magnetic Field Applications TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G D a ta s h e e t 1999-03-31 This Material Copyrighted By Its Respective Manufacturer TLE 4905 G; TLE 4935 G

Contextual Info: / r u n m TECHNOLOGY m |_o w f\j0 jse Very High Speed O perational Amplifier F€ R TU R € S D C S C R IP T IO n • G a i n o f 2 5 S t a b le T h e L T 1 2 2 6 is a l o w n o i s e , v e r y h i g h s p e e d o p e r a t i o n a l ■ 1 G H z G ain B an d w id th

stk7404

Contextual Info: SANYO SEMICONDUCTOR CORP 3SE I> 7137071. 0001207 h E3 STK7404 No.1639 Thick Film Hybrid IC Of f l in e Sw it c h in g Regulator Features . S w i t c h i n g r e g u l a t o r p o w e r IC f a b r i c a t e d u s i n g Sanyo's o r i g i n a l I M S T Insulated Metal Substrate Technology

Contextual Info: urm TECHNOLOGY LI NE AR T E C H N O L O G Y CORP EOE D • ttV-oy SSlfl4bfl G G 0 3 3 S S 2 ■ LM185-T .2/LM385-1.2 M icropow er V o lta g e Reference F€flTUft€S D€SCMPTIOn ■ 10yuA to 20mA operating range ■ Guaranteed 1% initial voltage tolerance

RETICON RL 256

Abstract: RL0256 RL025
Contextual Info: E G 8, G RETICON 47E ]> • 303073Ô Q 0 Q 3 b c1D S « R E T M Series ^ E G z G RETICON Multiplexers T -W -S S The EG&G Reticon M Series parallel-in-serial-out multiplexer is a general purpose digital scanner for hybrid imager appli­ cations, especially applicable for infrared arrays made with

Contextual Info: STI29320-90 T/G (R/S) 80-PIN FLASH SIMMS 8M X 32 Bits Flash Memory Module (5V Only) FEATURES GENERAL DESCRIPTION • • • • • • The Simple Technology STI29320-90(T/G)(R/S) is a 8 M x 32 bits flash memory module. The Simple Technology STI2932090(T/G)(R/S) consists of sixteen 2M x 8 bits CMOS flash

A1967

Contextual Info: 80-PIN FLASH SIMMS STI29082-90 T/G (R/S) 2M X 32 Bits Flash Memory Module (5V Only) FEATURES GENERAL DESCRIPTION • • • • • • The Simple Technology STI29082-90(T/G)(R/S) is a 2M x 32 bits flash memory module. The Simple Technology STI2908290(T/G)(R/S) consists of four 2M x 8 bits CMOS flash memory

Contextual Info: Temic TSSS2600 S e m i c o n d u c t o r s GaAs IR Emitting Diode in Side View Miniature Package Description T SSS2600 is a m iniature infrared em itting diode in G aA s on G aA s technology, m olded in a clear, untinted plastic package w ith cylindrical side view lens.

TC74HCT651AP

Abstract: TC74HCT651A
Contextual Info: TC74HCT651AP W TC74HCT652AP O C T A L BUS T R A N S C E I V E R / R E G I S T E R TC74HCT651A P IN V E R TIN G TC74HCT652A P N O N -IN V E R T IN G The TC74HCT651A/HCT652A are high speed C M O S O C T A L B U S T R A N S C E I V E R / R E G I S T E R s fabricated

Contextual Info: Discrete Semiconductors Sanyo’s proprietary transistor technology In re c e n t y e a rs , c o n s id e ra b le a tte n tio n has b e e n fo c u s e d o n th e a c c e le r a tin g ra te a t w h ic h th e s c a le o f d e v ic e in te g ra tio n has p ro g re s s e d . A t th e s a m e tim e , h o w e v e r, n e w te c h n o lo g ie s a r e c o n ­

Contextual Info: vTC74HC27AP/AF/AFN T R I P L E 3 - I N P U T NOR G A T E The TC74HC27A is a high speed CMOS 3- IN P U T NOR G A T E fabricated with silicon gate C 'M O S technology. It achieves the high speed operation s im ila r to equivalent L S T T L while m ain tain in g the C M O S low power

Contextual Info: TC74HC85AP/AF/AFN 4 - B IT M A G N IT U D E COMPARATOR T he TC74HC85A is a high speed CMOS 4 BIT M A G N IT U D E C O M P A R A T O R fabricated with silicon g ate C ^ IO S technology. It achieves the high speed operatio n s im ila r to equivalent L S T T L while m a in ta in in g the CMOS low pow er

AS1753

Abstract: AS1751 AS1752 COM113
Contextual Info: AS1751 , AS1752, AS1753 D a ta S he e t H i g h - Sp e e d , L o w - Vo l ta g e , S i n g l e - S u p p l y, 0 . 9 Ω, Q u a d S P S T A n a l o g S w i t c h e s 1 General Description 2 Key Features The AS1751/AS1752/AS1753 are high-speed, low-voltage, quad single-pole/single-throw SPST analog

Contextual Info: Te c h n o lo g ie s of the fu tu re T e ch n o lo g ie n m it Z u k u n ft Two te c h n o lo g ie s are in c r e a s in g ly g a in in g a c c e p t- Zwei T echn o log ie n se tze n sich z u n e h m e n d du rch : ance: P re s s -fit and P re ss -in. P re ss -in is a m ethod

M74HC133

Contextual Info: SbE T> m 7 ^ 2 3 7 003^075 b 3 T » S f i T H _ Æ 7 S G S -T H O M S O N [*[!ä & i(g raiO S M54HC133 M74HC133 S G S-THOMSON T LV J - 2 / 13 • HIGH SPEED tpD = 18 ns (TYP. at VCc = 5V ■ LOW POWER DISSIPATION ICC = 1 M (MAX.) at T a « 25°C

74HCTI38

Contextual Info: sb E ]> • □ o a 'iô 'ib 3 b 4 m s g t h Æ 7 S G S -T H O M S O N ^ 7 # , RitlOWdILiKgraRilOÊS S G M54HCT138 M74HCT138 T - 6 7 - Z i S S * S-THOMSON 3 TO 8 LINE DECODER ■ LOW POWER DISSIPATION Ice = 4 MAX. at Ta = 25°C ■ HIGH NOISE IMMUNITY Vnih = V n il= 28% Vcc (MIN.)

Contextual Info: TC74HC4024AP/AF 7 - S T A G E B I N A R Y COUNTER T he TC74HC4024A is a h ig h speed CMOS 7 -S T A G E B IN A R Y C O U N T E R fa b ric a te d w ith silicon g a te C z MOS technology . It achieves the h ig h speed o p eratio n s im ila r to eq u iv alen t L S T T L w hile m a in ta in in g th e CMOS low pow er

TC74HC76

Abstract: TC74HC7645AP B7-111 TC74HC7640AP B3D15 TC74HC7645
Contextual Info: s/ÎC74HC7640AP/AF - TC74HC7643AP/AF VTC74HC7645AP/AF OCTAL BU S T R A N S C E IV E R W ITH SCH M ITT T R IG G E R IN PU T S TC74HC7640AP/AF 3-STATE, IN V E R T IN G TC74HC7643AP/AF 3-STATE, IN V E R T IN G AND N O N -IN V ERT IN G TC74HC7645AP/AF 3-STATE, N O N -IN V ER T IN G _

Contextual Info: TC74HC7640AP/AF TC74HC7643AP/AF TC74HC7645AP/AF O C T A L B U S T R A N S C E I V E R W IT H S C H M I T T T R I G G E R IN P U T S T C 74 H C 7640A P/A F 3 - S T A T E , IN V E R T IN G T C74H C7643AP/AF 3 -S T A T E , IN V E R T IN G A N D N O N -IN V E R T IN G

Contextual Info: TOSHIBA •ìD1 7 2 4 fl Ü G E S O M O TOSHIBA LOGIC/MEMORY SI S « T O S S b'IE D CMOS 512KX9 RDRAM TC59R0409 t a r g e t s il ic o n g a t e s p e c DESCRIPTION This a new generation ultra high speed CMOS Rambus™ DRAM organized as 512KX9. It uses advanced

SUB70N06-14-E3

Contextual Info: SUP/SUB70N06-14 Vishay Siliconix N-Channel 60-V D-S , 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 60 0.014 70a Pb-free Available RoHS* COMPLIANT TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N06-14 Top View N-Channel MOSFET

SUB70N06-14

Abstract: SUB70N06-14-E3 SUP70N06-14 SUP70N06-14-E3
Contextual Info: SUP/SUB70N06-14 Vishay Siliconix N-Channel 60-V D-S , 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 60 0.014 70a Pb-free Available RoHS* COMPLIANT TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N06-14 Top View N-Channel MOSFET

Contextual Info: T emic TSHA550. S e mi f o n d u i t ors GaAlAs Infrared Emitting Diodes in 05mm T-F/O Package Description The TSH A 550. series are high efficiency infrared em it­ ting diodes in G aA lA s on G aA lA s technology, m olded in a clear, untinted plastic package.