FXM DIODE Search Results

Contextual Info: DATA SHEET PHOTO DIODE NDL5531P Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS <¿30 fxm InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm.

Astrotec

Contextual Info: m i c r o e l e c t r o n i c s gr oup Data Sheet September 1996 Lucent Technologies Bell Labs Innovations 270F-Type ASTROTEC 1.3 fxm Multifrequency MQW Analog Laser Module Benefits • High output power allows for longer system spans, more fiber splits, and greater tolerance of fiber and

dlop 06

Abstract: fxm diode
Contextual Info: Infrared Laser Diode DL-LS39_ DL-LS39 is a 50mW laser diode with a small and lightweight package. It has small astigmatism and high reliability. DL-LS39 is suitable for recordable optical disc systems such as mini-disc players, recordable compact disc players and other

T4105E

Abstract: fxm diode T4105 SLD204
Contextual Info: SONY CORP/COMPONENT PROPS IflE D • 0302353 00GS0Ö5 □ SLD204V SONY, T-41-05 High Power Laser Diode D e scrip tio n The SLD204V is an index-guided high-power laser diode fabricated by MOCVD. P ackage O u tlin e Unit: mm S tru c tu re GaAIAs double-hetero laser diode.

Contextual Info: mm n—□;* sr-fsr—k Super Fast Recovery Diode Single Diode O U T L IN E D IM E N S IO N S Case : E -pack DE3L40 'J A , ÿ - ';> - ÿ V \Jy K<7 3 # ^ / * 9 -> S ta n d a r d s o ld e r in g pad 400V 3A •: 0.6 ■ - 0.1 T o l e r a n c e i ' 0.1 -° 2

4VQ03CT

Abstract: 4VQ03CTF 4VQ04CT 4VQ04CTF FT28
Contextual Info: FEATUR ES • TO-251AA Case o 4VQ03CT 4VQ04CT 4VQ03CTF 4VQ04CTF 4 . 4A / 30 — 40 V SCHOTTKY BARRIER DIODE 2.3SMAX .094 2.38MAX (.094) TO-252AA Case, Surface Mount Device 16-221245) 0.9Í.035) NOM INAL 5.98(.235) i_ ° Dual Diodes - Cathode Common 1.5 MAX

Contextual Info: HL6312/13G AIGalnP Laser Diodes Description The H L6312/13G are 0.63 ¿im band A IG alnP laser diodes w ith a m ulti-quantum w ell M Q W structure. W avelength is equal to H e-N e G as laser. T hey are suitable as light sources in b ar code readers . laser

Contextual Info: T O SH IB A TLN208 TOSHIBA LED LAMP GaAM s INFRARED EMITTER TLN208 O O Light source for auto focus • Optical radiation of current confining LED chip is condensed by Infrared light emission diode for still camera U nit in mm TOLERANCE ± 0 .2 m m a resin lens.

FLD130C2

Abstract: FLD130C2BN FLD130
Contextual Info: InGaAsP/lnP LASER DIODE MODULE n I H FEATURES • B it rate c a p a b ility to 150 Mb/s • Stable operation over a w ide tem perature range • Low operating and threshold cu rre n t • H erm etically sealed 14 pin dual-in-line package w ith m o n ito r p ho to d io d e and coupled to single mode fib e r

TLR114A

Abstract: TLR120A
Contextual Info: TOSHIBA 7. [3 ] Explanations LED Lamps 7.1 LED Lamp Characteristics In commercially available LED lamps, the maximum ratings are specified as in standard semiconductor devices. These maximum ratings are param eter values that m ust never be exceeded. If two parameters are at their maximum values

EPITAXX

Abstract: ETX505Q large area quadrant photodiode ETX100TL-ST ingaas LED epitaxx quadrant ETX1000T InGaAs Epitaxx linear T05 Package ETX300
Contextual Info: EPITAXX INC EHE D 33bG40b QGGGQbB =1 r -^ - o i Telecommunications: The Local Loop EPITAXX has been a pioneer in developing packaging which supports high volume production while reducing component costs. EPITAXX receptacled photodiodes, laser diodes, and LEDs offer high reliability,

60N03

Abstract: 60N035
Contextual Info: KF17117A-5 6 0 N 0 3 5 N -Channel Field Effect Transistor Preliminary June 2001 General Description These n-channel power field effect transistors are produced using high cell density D M O S technology. These devices are particularly suited for low voltage applications such as automotive and other battery

DIODE m7 dic

Abstract: M54801P
Contextual Info: M IT S U B IS H I B IP O L A R D IGITA L IC s M54801P F M D IV E R S IT Y R E C E IV E R C O N TR O LLE R DESCRIPTION The M 54801P is a n l2L s e m ic o n d u c to r in te g r a te d PIN CONFIGURATION TOP VIEW c irc u it o o n s is tin g o f an F M d iv e r s ity r e c e iv e r c o n tro lle r d e v e lo p e d

FLD130F2KP

Abstract: FLD130 10 gb laser diode 1310 nm
Contextual Info: InGaAsP/lnP FEATURES • Wavelength : 1.3 nm • Fast pulse response : tr, tf = 100 psec. • Optical isolation . 30 dB • Fiber output power : 2.5 mW • Hermetically sealed SIP ceramic package • Built-in optical isolator, ternary PIN-PD, thermistor and

FXM2IC102

Abstract: FXM2IC102L8X JESD22-A114
Contextual Info: FXM2IC102 Dual Supply 2-Bit I2C Interface Voltage Translator with Configurable Voltage Supplies and Signal Levels and Auto-Direction Sensing Features General Description • Bi-directional interface between any two levels from The FXM2IC102 is a configurable dual-voltage-supply

FXM2IC102

Abstract: FXM2IC102L8X JESD22-A114 J-STD-020B MAC08A
Contextual Info: FXM2IC102 Dual Supply 2-Bit I2C Interface Voltage Translator with Configurable Voltage Supplies and Signal Levels and Auto Direction Sensing Features General Description • Bi-directional interface between any two levels from The FXM2IC102 is a configurable dual-voltage-supply

FXM2IC102

Abstract: FXM2IC102L8X JESD22-A114
Contextual Info: FXM2IC102 2-Bit I2C Bus Interface Voltage Translator / Repeater Features Description ƒ Bi-Directional Interface between any Two Levels from 1.65V to 5.5V ƒ Auto-Direction Sensing, Direction Control not Needed The FXM2IC102 is a configurable dual-voltage-supply

Contextual Info: FXMA2104 Dual-Supply, 4-Bit Voltage Translator / Buffer / Repeater / Isolator for Open-Drain Applications Features Description • Bi-Directional Interface between Any Two Levels: 1.65V to 5.5V •  Direction Control not Needed The FXMA2104 is a 4-bit high-performance,

Contextual Info: FXMAR2104 Dual-Supply, 4-Bit Voltage Translator / Isolator for Open-Drain and Push-Pull Applications Features Description • Bi-Directional Interface between Any Two Levels: 1.65V to 5.5V •   Direction Control Not Needed The FXMAR2104 is a 4-bit high-performance,

Contextual Info: FXMAR2104 Dual-Supply, 4-Bit Voltage Translator / Isolator for Open-Drain and Push-Pull Applications Features Description • Bi-Directional Interface between Any Two Levels: 1.65V to 5.5V •   Direction Control Not Needed The FXMAR2104 is a 4-bit high-performance,

Contextual Info: FXMA2104 Dual-Supply, 4-Bit Voltage Translator / Buffer / Repeater / Isolator for Open-Drain Applications Features Description • Bi-Directional Interface between Any Two Levels: 1.65V to 5.5V •  Direction Control not Needed The FXMA2104 is a 4-bit high-performance,

fxma2104

Contextual Info: FXMA2104 Dual-Supply, 4-Bit Voltage Translator / Buffer / Repeater / Isolator for Open-Drain Applications Features Description • Bi-Directional Interface between Any Two Levels: 1.65V to 5.5V •  Direction Control not Needed The FXMA2104 is a 4-bit high-performance,

Contextual Info: FXMAR2104 Dual-Supply, 4-Bit Voltage Translator / Isolator for Open-Drain and Push-Pull Applications Features Description • Bi-Directional Interface between Any Two Levels: 1.65V to 5.5V •   Direction Control Not Needed The FXMAR2104 is a 4-bit high-performance,

FXMAR2102

Contextual Info: FXMAR2102 Dual-Supply, 2-Bit Voltage Translator / Isolator for I2C Applications Features Description • Bi-Directional Interface between Any Two Levels: 1.65V to 5.5V •   No Direction Control Needed The FXMAR2102 is a high-performance configurable