FX30SM Search Results

FX30SMJ-3

Abstract: PRSS0004ZB-A SC-65
Contextual Info: FX30SMJ-3 High-Speed Switching Use Pch Power MOS FET REJ03G1449-0200 Previous: MEJ02G0292-0101 Rev.2.00 Aug 07, 2006 Features • • • • • Drive voltage : 4 V VDSS : –150 V rDS(ON) (max) : 100 mΩ ID : –30 A Integrated Fast Recovery Diode (TYP.) : 100 ns

Contextual Info: MITSUBISHI Pch POWER MOSFET FX30SMJ-2 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX30SMJ-2 OUTLINE DRAWING Dimensions in mm .4.5. 15.9 max 1.5 S S < >3.2 hf 4 T Î © 5.45 0.6 T P1 T • 4 V D R IV E •V dss .-1 0 0 V

Contextual Info: FX30SMJ-3 High-Speed Switching Use Pch Power MOS FET REJ03G1449-0200 Previous: MEJ02G0292-0101 Rev.2.00 Aug 07, 2006 Features • • • • • Drive voltage : 4 V VDSS : –150 V rDS(ON) (max) : 100 mΩ ID : –30 A Integrated Fast Recovery Diode (TYP.) : 100 ns

Contextual Info: MITSUBISHI Pch POWER MOSFET FX30SMJ-06 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX30SMJ-06 OUTLINE DRAWING Dimensions in mm 4.5 4.4 Q • 4V DRIVE • V d s s .-60V GATE © D R A IN ©SOURCE

Contextual Info: MITSUBISHI Pch POWER MOSFET FX30SMJ-03 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX30SMJ-03 OUTLINE DRAWING Dim ensions in mm 4.5 15.9 max 1.5 < >3.2 -¥ ¥ * © 5.45 0.6 o ( • 4V DRIVE • V dss ©G ATE © D R A IN ©SOURCE © D R A IN o - . -3 0 V

FX30SMJ-3

Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX30SMJ-3 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30SMJ-3 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2

"MOSFET A5 VNA

Abstract: 710023
Contextual Info: MITSUBISHI Pch POWER MOSFET FX30SMJ-3 ^ e V a<a s° HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 4 .5 . 15.9 m ax 1.5 | 3.2 mr ¥ b f * © 5 .4 5 0.6 0( • 4 V D R IV E • V ds s .-1 5 0 V

fx30smj03

Abstract: FX30SM
Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX30SMJ-03 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30SMJ-03 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4

fx30smj2

Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX30SMJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30SMJ-2 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2

fx30smj06

Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX30SMJ-06 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30SMJ-06 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4

FX50SM-2

Abstract: FX20KM-06 FX50VS06 FX6AS-06 fx6um-06 FX30KM06 marking Td FX3AS-06 FX6KM-06
Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Short Form Data Selector Guide Discrete MOSFET Low Voltage Trench Gate - 10.0V Driver Voltage p-channel MOSFETs Maximum Ratings, Tc = 25°C Device V qss •d VGSS Number (V)

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

FS10KM12

Abstract: FS10SM16A FS20KM-5 FS10SM18A FS7UM16A FS18SM10 CT40TMH FS7UM-16A FX6KM-06 CT60AM-20
Contextual Info: HMcnor Q lliC k Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Reference Guide Discrete IGBTs Strobe Flash Applications Product Features: □ Guaranteed Flash Life □ High Peak Current Capability □ Compact Package □ Specified Capacitor Ratings

FX30SMJ-3

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

FX30SMJ-3

Abstract: PRSS0004ZB-A SC-65
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

FX6VSJ-03

Abstract: fx6vsj-06 TO-220FN FX6VSJ06 FX30UMJ03 FX30KMJ-06 fx50smj
Contextual Info: < W E R E X Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S t l O f t F O T IT Ì D â t S Selector Guide Discrete MOSFET - Low Voltage Trench Gate 4.0V Driver Voltage p-channel MOSFETs Maximum Ratings, Tc = 25°C Device

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

Contextual Info: Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h o rt FO D TI D 3 t3 Selector Guide Discrete MOSFET - Low Voltage Trench Gate (continued) 10.0V Driver Voltage p-channel MOSFETs Maximum Ratings, T, = 25°C Electrical Characteristics

Contextual Info: Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h O I* t F O f lH D â tS Selector Guide Discrete MOSFET - Low Voltage Trench Gate (continued) 2.5V Driver Voltage p-channel MOSFETs Electrical Characteristics Maximum Ratings, T, = 25°C

Contextual Info: lO M fiR D T Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S l l O i t F O r iT I D d t d Selector Guide Discrete MOSFET - Low Voltage Trench Gate (continued) 4.0V Driver Voltage p-channel MOSFETs Maximum Ratings, T, = 25°C

Contextual Info: < W E R E X SflOrt FOTiTÌ Dâtâ Powerex, Inc., 200 HHIis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Selector Guide Discrete MOSFET Low Voltage Trench Gate - 2.5V Driver Voltage p-channel MOSFETs M axim um R atings, T c = 25°C Device VDSS

1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5