FX20S Search Results

Contextual Info: MITSUBISHI Pch POWER MOSFET FX20SMJ-03 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX20SMJ-03 OUTLINE DRAWING Dimensions in mm .4.5. 1.5 ter ¿I Q • 4V DRIVE • V d s s .-30V • rDS ON (MAX) . 0.130

Contextual Info: MITSUBISHI Pch POWER MOSFET FX20SMJ-06 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX20SMJ-06 OUTLINE DRAWING Dimensions in mm .4.5. 1.5 4.4 o • 4V DRIVE • V d s s .-60V o- ©GATE ©DRAIN

fx20smj-06

Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX20SMJ-06 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20SMJ-06 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4

fx20smj3

Abstract: 4470 mosfet
Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX20SMJ-3 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20SMJ-3 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2

Contextual Info: MITSUBISHI Pch POWER MOSFET FX20SMJ-3 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX20SMJ-3 OUTLINE DRAWING Dimensions in mm .4 .5 . 1 5.9 m ax 1.5 < >3.2 mr IrT ¥ 4 .4 1.0 © © 5.45 © 5 .4 5 0.6 0( • 4V DRIVE ©GATE © D R A IN o- • V ds s . -1 5 0 V

FX20S

Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX20SMJ-03 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20SMJ-03 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4

FX20SMJ-2

Contextual Info: MITSUBISHI Pch POWER MOSFET FX20SMJ-2 ^ e V a<a s° HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm .4 .5 . 1 5.9 m ax 1.5 | 3.2 © 5 .4 5 0.6 o ( • 4 V D R IV E •V dss ©GATE © D R A IN ©SOURCE o- .-1 0 0 V

fx20smj2

Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX20SMJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20SMJ-2 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2

FX50SM-2

Abstract: FX20KM-06 FX50VS06 FX6AS-06 fx6um-06 FX30KM06 marking Td FX3AS-06 FX6KM-06
Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Short Form Data Selector Guide Discrete MOSFET Low Voltage Trench Gate - 10.0V Driver Voltage p-channel MOSFETs Maximum Ratings, Tc = 25°C Device V qss •d VGSS Number (V)

CD4059

Abstract: d2052 000G4 FX205 FX205P T7521 437L
Contextual Info: 7 " - 7 5 -2 7 -0 5 F U N C T IO N A L SC H EM A TIC a m p l it u d e P U B L IC A T IO N D /2 0 5 /2 /0 2 1 F E B R U A R Y 1981 FX 205 FX 205P : co ntrol TO NE ENCODERS F ig. 1 FE A TU R E S • PSEUDO-SINEWAVE OUTPUT CHOICE OF PACKAGE STYLES ■ WIDE FREQUENCY RANGE

FS10KM12

Abstract: FS10SM16A FS20KM-5 FS10SM18A FS7UM16A FS18SM10 CT40TMH FS7UM-16A FX6KM-06 CT60AM-20
Contextual Info: HMcnor Q lliC k Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Reference Guide Discrete IGBTs Strobe Flash Applications Product Features: □ Guaranteed Flash Life □ High Peak Current Capability □ Compact Package □ Specified Capacitor Ratings

FX6VSJ-03

Abstract: fx6vsj-06 TO-220FN FX6VSJ06 FX30UMJ03 FX30KMJ-06 fx50smj
Contextual Info: < W E R E X Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S t l O f t F O T IT Ì D â t S Selector Guide Discrete MOSFET - Low Voltage Trench Gate 4.0V Driver Voltage p-channel MOSFETs Maximum Ratings, Tc = 25°C Device

FX105 ac power

Abstract: T7527
Contextual Info: CML Semiconductor Products Q n yn PRODUCT INFORMATION H F X 105 4SE D • Tone Detector - T -7 5 -Z7 -O S 237437b 00004S1 3 « C M C R Publication D/105/3/12/0 CONSUMER MICROCIRCUITS FX105 TONEDETECTOR FEATURES • • • • • • OPERATES IN HIGH NOISE CONDITIONS

Contextual Info: Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h o rt FO D TI D 3 t3 Selector Guide Discrete MOSFET - Low Voltage Trench Gate (continued) 10.0V Driver Voltage p-channel MOSFETs Maximum Ratings, T, = 25°C Electrical Characteristics

Contextual Info: lO M fiR D T Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S l l O i t F O r iT I D d t d Selector Guide Discrete MOSFET - Low Voltage Trench Gate (continued) 4.0V Driver Voltage p-channel MOSFETs Maximum Ratings, T, = 25°C

Contextual Info: < W E R E X SflOrt FOTiTÌ Dâtâ Powerex, Inc., 200 HHIis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Selector Guide Discrete MOSFET Low Voltage Trench Gate - 2.5V Driver Voltage p-channel MOSFETs M axim um R atings, T c = 25°C Device VDSS

DIODE marking S4 9c

Abstract: segment XDK C3A marking code capacitor 220 microfarad 1N914 200k ohms potentiometer switch FX105
Contextual Info: O nun d • =d) 4SE D CML Semiconductor Products PRODUCT INFORMATION rv H A r I" A I UD ■ _ _ Tone Detector 237437b 00004S1 3 « C M C R ~T'-7 5 ~2 7 'ô S _ Publication D/105/3/12/0 CONSUMER MICROCIRCUITS FUNCTIONAL S CHEM ATIC FX-105 FX105 TONEDETECTOR