FULLY PROTECTED P CHANNEL MOSFET Search Results

Contextual Info: DMP2035U P-CHANNEL ENHANCEMENT MODE MOSFET • • • • • • • • Mechanical Data • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 3KV Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2

Contextual Info: DMP2035U P-CHANNEL ENHANCEMENT MODE MOSFET • • • • • • • • Mechanical Data • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 3KV Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2

Contextual Info: DMP2035U P-CHANNEL ENHANCEMENT MODE MOSFET • • • • • • • • Mechanical Data • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 3KV Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2

si2310

Abstract: DSA0011255 "network interface cards"
Contextual Info: CMPWR280 1.5A SmartORTM Dual Regulator with VAUX Drive Features Product Description • The California Micro Devices’ SmartORTM CMPWR280 is a fully protected Dual-Input low-dropout CMOS regulator that also provides the necessary control signal for driving an external auxiliary P-channel

si2310

Abstract: microfarad SI2310DS MARKING 5A regulator FDN338P circuit diagram of three phase automatic changeover switch CMPWR280 CMPWR280TN CMPWR280TO marking 141C
Contextual Info: CMPWR280 1.5A SmartORTM Dual Regulator with VAUX Drive Features Product Description • The California Micro Devices’ SmartORTM CMPWR280 is a fully protected Dual-Input low-dropout CMOS regulator that also provides the necessary control signal for driving an external auxiliary P-channel

si2310DS

Abstract: si2310 CMPWR280 CMPWR280TA CMPWR280TB CMPWR280TN CMPWR280TO FDN338P "network interface cards"
Contextual Info: CMPWR280 1.5A SmartORTM Dual Regulator with VAUX Drive Features Product Description • The California Micro Devices’ SmartORTM CMPWR280 is a fully protected Dual-Input low-dropout CMOS regulator that also provides the necessary control signal for driving an external auxiliary P-channel

JESD97

Abstract: P62NS04Z STP62NS04Z
Contextual Info: STP62NS04Z N-channel clamped 12.5mΩ - 62A - TO-220 Fully protected MESH OVERLAY Power MOSFET General features Type VDSS @Tjmax RDS(on) Clamped <0.015Ω ID ) s ( t c u d o ) r s ( P t Description c e t u e d l o o r s P b Internal schematic diagram

Contextual Info: DMP2004TK P-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2

Contextual Info: DMG1013UW P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data •           Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS compliant Notes 1 & 2

P32D

Abstract: P32-D DMP32D4SW
Contextual Info: DMP32D4SW 30V P-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(on) Max -30V 2.4 @ VGS = -10V 4 @ VGS = -4.5V • ID Max @ TA = 25C -250mA -200mA Low On-Resistance  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Contextual Info: DMP32D4S 30V P-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(on) Max -30V 2.4Ω @ VGS = -10V 4Ω @ VGS = -4.5V • ID Max @TA = +25C -300mA -250mA Low On-Resistance  ESD Protected Gate to 2kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Contextual Info: DMP2004WK P-CHANNEL ENHANCEMENT MODE MOSFET Mechanical Data •  Low On-Resistance Very Low Gate Threshold Voltage VGS th < 1V  Low Input Capacitance   Fast Switching Speed   Low Input/Output Leakage   ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

DMP32D4S-7

Contextual Info: DMP32D4S 30V P-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(on) Max -30V 2.4 @ VGS = -10V 4 @ VGS = -4.5V • ID Max @ TA = +25C -300mA -250mA Low On-Resistance  ESD Protected Gate to 2kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Contextual Info: DMP3065LVT P-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary V BR DSS Features and Benefits RDS(ON) max ID max TA = +25°C • Low On-Resistance • Low Input Capacitance -4.9A • Fast Switching Speed -3.7A • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

724G

Abstract: fully protected p channel mosfet P-DSO-20 B152-H8246-X-X-7600
Contextual Info: P R O D U C T B R I E F The BTS 724G is a four channel high-side power switch four times 90 mΩ in P-DSO-20 package. It is fully protected by embedded protection functions. There are two diagnostic feedback pins signalling open load and over temperature. The device is

Infineon Q67060-S7023

Abstract: BTS 5215L 5215L
Contextual Info: P R O D U C T B R I E F The BTS 5215L is a dual channel high-side power switch two times 90 mΩ in Power SO-12 package. It is fully protected by embedded protection functions. There is one diagnostic feedback pin for each channel signalling open load and over temperature. The device is monolithically integrated in

6133d

Abstract: P-TO252-5 IL12 BTS 6133D dpak 5 pin
Contextual Info: P R O D U C T B R I E F The BTS 6133D is a single channel high-side power switch 10 mΩ in TO252-5 (DPAK 5 pin) package. It is fully protected by embedded protection functions including ReverSafe and InverSafe. ReverSafe is a protection feature that causes the

5210L

Abstract: s7503 Q67060-S7502 5210g
Contextual Info: P R O D U C T B R I E F The BTS 5210G is a dual channel high-side power switch two times 140 mΩ in P-DSO-14 package. The BTS 5210L is the same chip in Power SO-12 package. They are fully protected by embedded protection functions. There is one diagnostic feedback pin for each

to220-7-180

Abstract: H8243 IL12 P-TO220-7-230 Q67060-S6058 power transistor for inductive load in to220 package
Contextual Info: P R O D U C T B R I E F The BTS 6144P is a single channel high-side power switch 9 mΩ in TO220-7-230 package. The BTS 6144B is the same high-side power switch in TO220-7-180 (SMD) package. They are fully protected by embedded protection functions including ReverSafe.

6163D

Abstract: BTS 6163D P-TO252-5 dpak 5 pin IL12 Q67060-S7424
Contextual Info: P R O D U C T B R I E F The BTS 6163D is a single channel high-side power switch 20 mΩ in TO252-5 (DPAK 5 pin) package. It is fully protected by embedded protection functions including ReverSafe. ReverSafe is a protection feature that causes the power transistor to switch on in case of reverse

6143d

Abstract: P-TO252-5 BTS 6143D IL12 dpak 5 pin fully protected p channel mosfet
Contextual Info: P R O D U C T B R I E F The BTS 6143D is a single channel high-side power switch 10 mΩ in TO252-5 (DPAK 5 pin) package. It is fully protected by embedded protection functions including ReverSafe. ReverSafe is a protection feature that causes the power transistor to switch on in case of reverse

Contextual Info: L ir m TECHNOLOGY LT1161 Q uad Protected High-Side MOSFET Driver F€OTUR€S D c s c n iP T io n • Fully Enhances N-Channel MOSFET Switches ■ 8V to 48V Power Supply Range ■ Protected from -15V to 60V Supply Transients ■ Individual Short-Circuit Protection

LT11611

Abstract: IRFZ44 equivalent stepper motor using irfz44 IRFZ44 TIMER
Contextual Info: ^ L in e A fc TECHNOLOGY /7 LT11Ó1 Q uad Protected High-Side MOSFET D river F€fiTU R€ S DCSCfflPTIOn • Fully Enhances N-Channel MOSFET Switches ■ 8V to 48V Power Supply Range ■ Protected from -15V to 60V Supply Transients ■ Individual Short-Circuit Protection

MOSFET IGNITION

Abstract: NTMS4700NR2
Contextual Info: ON Semiconductor Selector Guide − Power MOSFET Products Power MOSFET Products In Brief . . . ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑÑ ÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ