FUJI IGBT TENTATIVE Search Results

2MBI75UA-120

Contextual Info: Fuji Hitachi Power Semiconductor Co., Ltd IGBT Development Dept. Section M12 <TENTATIVE> 2 M B I7 5 U A - 1 2 0 Target specification This material and the information herein is the property of Fuji Slecmc Co .Ltd.They shall be neither reproduced, copied

2MB11

Contextual Info: Fuji Hitachi Power Semiconductor Co., Ltd IGBT Development Dept. Section M12 <TENTATIVE> 2MB1150U B -120 Target specification This material and the Information herein is the property of Fuji Electnc Co.Ltd They shall be neither reproduced, copied lent, or disclosed in any way whatsoever for the use of any

Contextual Info: Target Specification TENTATIVE (450A/1200V-6in1 IGBT Module) IGBT Module This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any

Contextual Info: Fuji Hitachi Power Semiconductor Co.,Ltd IGBT Development Dept. Section M12 <TENTATIVE> U-series 2MBI450UE-120 Target specification 1. Outline Drawing ( Unit : mm ) 2. Equivalent circuit Jun 19 ’02 Y.Kobayashi Jun 19 ’02 S.Miyashita REVISIONS T.Miyasaka

Contextual Info: Fuji Hitachi Power Semiconductor Co., Ltd IGBT Development Dept. Section M12 <TENTATIVE> U-series 2MBI200UC-120 Target specification 1. Outline Drawing ( Unit : mm ) 2. Equivalent circuit July 9 ‘02 July 9 ‘02 REVISIONS T.Satou S.Miyashita T.Miyasaka

Contextual Info: SPECIFICATION Tentative target Device Name : IGBT MODULE Type Name : 1MBI600UB-120 Spec. No. : Fuji Electric Co.,Ltd. Matsumoto Factory Oct. 6 ‘03 S.Miyashita T.Miyasaka MT5F 14049 1 3 H04-004-07 1MBI600UB-120 Target specification (Tentative) 1. Outline Drawing ( Unit : mm )

WT6M

Abstract: 25CC
Contextual Info: S P E C 1 F 1 C A T 1 ON TENTATIVE -2 JZ c E ï* 5 — » Product Name :* Type Name : Spec. No. : IGBT Module (Power Integrated Module) I M B R I 0 P E 1 2 0 MT6M1918 O " Eç t ï - £ S? »_ o ~ C V î? J7 25 le! * i*i§ * -SU 5 g ô u n i çï?r *,•

7MBR25PE120

Contextual Info: S P E C I F I C A T I ON TENTATIVE Product Name : 1GBT Module (Power Integrated Module) 7 M B R 2 Type Name li n M T6 M I8 1 7 Spec. No. - 5=1 his! -j ï I - 5 P E 1 20 11 ! f| H | 5 i -I P I ! E 3 o |-*|ï 'Itj? |3l1f i2 SE i-5 l- sa ¿ u n Fuji Electric Co.,Ltd. (Matsumoto Factory)

TH50

Abstract: fuji igbt tentative
Contextual Info: S P E C I F I C A T I ON TENTATIVE Product Name : T M B R 1 5 P E l l l Type Name This m a le iia l nod (he inform ation heicn is llu; p io p c i ty of Fu|i £ Ite Inc Co.Lid They shüll ht* neither lepiuduted co p im i lent 01 disclosed in any way w h a ts o e v e i loi the usi; ol a n y

HEP230

Abstract: 2MBI600UE-060 7MBR50UA060 6mbi60 7MBR75UB060 2MBI300UB-060 7MBR30UA060 2MBI400UB-060 fuji transistor modules fuji bipolar transistor
Contextual Info: T-series and U-series IGBT Modules 600 V Seiji Momota Syuuji Miyashita Hiroki Wakimoto 110 2. T-series IGBT Modules 2.1 Features and challenges of T-series IGBT modules The cell structure of an NPT-type IGBT and the unit cell of PT (punch-through)-type device are shown

IGBT cross reference semikron eupec

Abstract: IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40
Contextual Info: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130

IGBT cross reference semikron eupec

Abstract: 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40
Contextual Info: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130

6MBR10PD120

Contextual Info: S P E C I F I C A T I ON TENTATIVE This m d lenii! and the mio»m.iiion hei fin is the proper ly of Fu|i Electric Co I id They shall be neither reproduced, copied leni or disclosed in any way whatsoever for the use of any thud i*ii* ly nor used for the manufac tin my pu»poses without

Contextual Info: Fuji H itachi Pow er S em iconductor Co.,Ltd IG B T D evelopm ent Dept. Section M12 <TENTATIVE> This material and the information herein is the property of Fuji Electnc Co .Ltd They shall be neither reproduced, copied, lent, or disclosed In any way whatsoever for the use of any

Contextual Info: Fuji Hitachi Power Semiconductor Co.,Ltd IG BT Development Dept. Section M12 <TENTATIVE> U -series 2 M B I3 0 0 U C -1 2 0 Target specification 1. Outline Drawing ( Unit : mm ) 28 ;o 2 21 ¡o 2 Mounting hole This material and the Information herein is the properly of

Contextual Info: DATE NAME DRAWN 14-Jul-05 T.Nishimura CHECKED 14-Jul-05 H.Kakiki T.Miyasaka DWG.No. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any

2MBI1200U4G-120

Abstract: ED-4701 MT5F12959
Contextual Info: DATE NAME DRAWN 14-Jul-05 T.Nishimura CHECKED 14-Jul-05 H.Kakiki T.Miyasaka DWG.No. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any

MT5F12959

Abstract: MT5F ic60
Contextual Info: DATE NAME DRAWN 14-Jul-05 T.Nishimura CHECKED 14-Jul-05 H.Kakiki T.Miyasaka DWG.No. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any

Contextual Info: Target Specification TENTATIVE This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without

Contextual Info: Target Specification TENTATIVE This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without

fuji igbt

Abstract: 4MBI150T-060 AE 04 equivalent
Contextual Info: a Changed the equivalent circuit Oct-24-’02 S.O, T,M 3 4 DATE REVISIONS MA4LE 18 5 6 NAME DRAWN Sep.-26-’02 S.Ogawa CHECKED Sep.-26-’02 S.Miyashita T.Miyasaka DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,

diode T325

Abstract: 2MBI150J-060 JZ 1-1A fuji IGBT
Contextual Info: i Ratings and characteristics of Fuji M B I 1 5 0 J T — IG B T 6 MBT Module (TENTATIVE) 1. Ou 11 ine Drawing Unit : mm * Isolation Voltage : AC 2500 V 1 ninute °í I : llí: U s - ìé t 2* â ë lili uni -iülï i n s 1|! jjjsl M UJ -O ÉÉJI Tab type terminals

2MBI200UB-120

Contextual Info: Fuji Hitachi P ow er S em iconductor Co., Ltd IG B T D evelopm ent D ept. S ection M12 <TENTATIVE> U-series 2M B I200U B -120 Target specification 1. Outline Drawing ( Unit : mm ) E2. Cl consent of Fuji Electric Co. L td . CÆ 1 2 3 = 0 2 40 -0 2 TUB TYPE TERMINALS

Contextual Info: Ratings and characteristics of Fuji I G B T M B T 2 M B I Y 5 — 6 Module (TENTATIVE) 1. Outline Drawing Unit : BB * Isolation ; UJ Voltage : AC 2500 V 1 lim ite Tab type terminals (AMP No.110 equivalent) 9 3 -M 5 DATE CHECKED < 7o,V\ bflE _ I APPROVED